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公开(公告)号：EP1788579B1
公开(公告)日：2014-03-12
申请号：EP06255928.1
申请日：2006-11-21
Applicant: STMicroelectronics, Inc.
Inventor： McClure, David C. , Saw, Sooping
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公开(公告)号：EP1788580B1
公开(公告)日：2010-11-17
申请号：EP06255930.7
申请日：2006-11-21
Applicant: STMicroelectronics, Inc.
Inventor： McClure, David C. , Saw, Sooping , Wadsworth, Robert
IPC: G11C16/20 , G11C16/22 , G11C17/16 , G06K19/073 , G06F21/00
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Patent Agency Ranking
公开(公告)号：EP1788579A1
公开(公告)日：2007-05-23
申请号：EP06255928.1
申请日：2006-11-21
Applicant: STMicroelectronics, Inc.
Inventor： McClure, David C. , Saw, Sooping
IPC: G11C16/20 , G11C16/22 , G11C17/16 , G06K19/073 , G06F21/00
Abstract: An integrated circuit temperature sensor includes a sensing circuit operable to determine whether the integrated circuit is currently exposed to one of a relatively low temperature or a relatively high temperature. A selection circuit operates to select a measured voltage across the base-emitter of a bipolar transistor of the integrated circuit if the sensing circuit indicates that the integrated circuit is currently exposed to the relatively low temperature or, alternatively, select a measured delta voltage across the base-emitter of the bipolar transistor of the integrated circuit if the sensing circuit indicates that the integrated circuit is currently exposed to the relatively high temperature. A comparator then compares the selected measured voltage across the base-emitter of the bipolar transistor against a first reference voltage indicative of a too cold temperature condition or compares the selected measured delta voltage across the base-emitter of the bipolar transistor against a second reference voltage indicative of a too hot temperature condition. As a result of the comparison, detection may be made as to whether the integrated circuit is currently exposed to one of either a too cold or too hot temperature. In a test mode, the circuit is exposed to a readily available temperature, such as room temperature, and the measured delta voltage across the base-emitter and/or the measured voltage across the base-emitter are scaled in accordance with that available temperature for application to the comparator. Alternatively, in test mode the reference voltages are scaled to intersect with the measured delta voltage across the base-emitter and/or the measured voltage across the base-emitter at the available temperature.
Abstract translation: 集成电路温度传感器包括感测电路，该感测电路可操作以确定集成电路当前是否暴露于较低温度或较高温度中的一个。 如果所述感测电路指示所述集成电路当前暴露于相对较低的温度，或者可替换地选择所述集成电路的双极晶体管的双极晶体管的双极晶体管的双极晶体管的双极晶体管的基极 - 发射极之间的测量电压， 如果感测电路指示集成电路当前暴露于相对高的温度，则集成电路的双极晶体管的基极 - 发射极。 比较器然后将双极晶体管的基极 - 发射极之间的选定测量电压与指示过冷温度条件的第一参考电压进行比较，或将双极晶体管的基极 - 发射极之间的选定测量德耳塔电压与第二参考电压 指示温度过高的情况。 作为比较的结果，可以检测集成电路当前是否暴露于太冷或太热的温度之一。 在测试模式下，电路暴露于容易获得的温度下，例如室温，并且基极 - 发射极两端的测量的Δ电压和/或基极 - 发射极两端的测量电压根据可用的温度 应用于比较器。 或者，在测试模式中，参考电压被缩放以与在基极 - 发射极之间测量的德耳塔电压和/或在可用温度下基极 - 发射极之间的测量电压相交。
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公开(公告)号：EP1788581B1
公开(公告)日：2014-05-21
申请号：EP06255947.1
申请日：2006-11-21
Applicant: STMicroelectronics, Inc.
Inventor： McClure, David C. , Saw, Sooping
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公开(公告)号：EP1788581A3
公开(公告)日：2007-08-22
申请号：EP06255947.1
申请日：2006-11-21
Applicant: STMicroelectronics, Inc.
Inventor： McClure, David C. , Saw, Sooping
IPC: G11C16/20 , G11C16/22 , G11C17/16 , G06K19/073 , G06F21/00
Abstract: An integrated circuit temperature sensor includes a sensing circuit operable to determine whether the integrated circuit is currently exposed to one of a relatively low temperature or a relatively high temperature. A selection circuit operates to select a measured voltage across the base-emitter of a bipolar transistor of the integrated circuit if the sensing circuit indicates that the integrated circuit is currently exposed to the relatively low temperature or, alternatively, select a measured delta voltage across the base-emitter of the bipolar transistor of the integrated circuit if the sensing circuit indicates that the integrated circuit is currently exposed to the relatively high temperature. A comparator then compares the selected measured voltage across the base-emitter of the bipolar transistor against a first reference voltage indicative of a too cold temperature condition or compares the selected measured delta voltage across the base-emitter of the bipolar transistor against a second reference voltage indicative of a too hot temperature condition. As a result of the comparison, detection may be made as to whether the integrated circuit is currently exposed to one of either a too cold or too hot temperature.
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公开(公告)号：EP1788581A2
公开(公告)日：2007-05-23
申请号：EP06255947.1
申请日：2006-11-21
Applicant: STMicroelectronics, Inc.
Inventor： McClure, David C. , Saw, Sooping
IPC: G11C16/20 , G11C16/22 , G11C17/16 , G06K19/073 , G06F21/00
Abstract: An integrated circuit temperature sensor includes a sensing circuit operable to determine whether the integrated circuit is currently exposed to one of a relatively low temperature or a relatively high temperature. A selection circuit operates to select a measured voltage across the base-emitter of a bipolar transistor of the integrated circuit if the sensing circuit indicates that the integrated circuit is currently exposed to the relatively low temperature or, alternatively, select a measured delta voltage across the base-emitter of the bipolar transistor of the integrated circuit if the sensing circuit indicates that the integrated circuit is currently exposed to the relatively high temperature. A comparator then compares the selected measured voltage across the base-emitter of the bipolar transistor against a first reference voltage indicative of a too cold temperature condition or compares the selected measured delta voltage across the base-emitter of the bipolar transistor against a second reference voltage indicative of a too hot temperature condition. As a result of the comparison, detection may be made as to whether the integrated circuit is currently exposed to one of either a too cold or too hot temperature.
Abstract translation: 集成电路温度传感器包括感测电路，该感测电路可操作以确定集成电路当前是否暴露于较低温度或较高温度中的一个。 如果所述感测电路指示所述集成电路当前暴露于相对较低的温度，或者可替换地选择所述集成电路的双极晶体管的双极晶体管的双极晶体管的双极晶体管的双极晶体管的基极 - 发射极之间的测量电压， 如果感测电路指示集成电路当前暴露于相对高的温度，则集成电路的双极晶体管的基极 - 发射极。 比较器然后将双极晶体管的基极 - 发射极之间的选定测量电压与指示过冷温度条件的第一参考电压进行比较，或将双极晶体管的基极 - 发射极之间的选定测量德耳塔电压与第二参考电压 指示温度过高的情况。 作为比较的结果，可以检测集成电路当前是否暴露于太冷或太热的温度之一。
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公开(公告)号：EP1788580A1
公开(公告)日：2007-05-23
申请号：EP06255930.7
申请日：2006-11-21
Applicant: STMicroelectronics, Inc.
Inventor： McClure, David C. , Saw, Sooping , Wadsworth, Robert
IPC: G11C16/20 , G11C16/22 , G11C17/16 , G06K19/073 , G06F21/00
Abstract: An integrated circuit includes an output pad, an alarm output pad, and a test mode output pad. A first multi-bit register is programmable to store programmable data such as data that identifies a customer for whom the integrated circuit has been manufactured. A second multi-bit register is programmable to store customer specified threshold data. A first circuit selectively couples the first and second multi-bit registers to the output pad. The first circuit is operable responsive to the integrated circuit being placed into a test mode to perform parallel-to-serial conversion of either the customer identification data stored in the first multi-bit register or the customer specified threshold data stored in the second multi-bit register and drive the converted data for output through the output pad. The integrated circuit further includes a tamper detection circuit operable responsive to the customer specified threshold data to generate a tamper alarm signal. A second circuit selectively couples the tamper alarm signal to the alarm output pad and test mode output pad depending on whether the integrated circuit is in a test mode. More specifically, the second circuit operates to drive the alarm output pad with the tamper alarm signal when the integrated circuit is not in test mode and drive the test mode output pad with the tamper alarm signal when the integrated circuit is in test mode (with the alarm output pad driven to a known state).
Abstract translation: 集成电路包括输出焊盘，警报输出焊盘和测试模式输出焊盘。 第一多位寄存器是可编程的以存储可编程数据，例如标识已为其制造集成电路的客户的数据。 第二个多位寄存器可编程以存储客户指定的阈值数据。 第一电路选择性地将第一和第二多位寄存器耦合到输出焊盘。 所述第一电路可响应于所述集成电路被置于测试模式而操作以执行存储在所述第一多位寄存器中的所述客户标识数据或存储在所述第二多位寄存器中的所述客户指定阈值数据的并行到串行转换， bit寄存器并驱动转换后的数据通过输出端输出。 集成电路进一步包括篡改检测电路，其可响应于顾客指定的阈值数据而产生篡改警报信号。 取决于集成电路是否处于测试模式，第二电路选择性地将篡改警报信号耦合到警报输出焊盘和测试模式输出焊盘。 更具体地，当集成电路不处于测试模式时，第二电路操作以用篡改警报信号驱动警报输出垫，并且当集成电路处于测试模式时用第二电路驱动具有篡改警报信号的测试模式输出垫（具有 警报输出板驱动到已知状态）。
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