公开(公告)号：EP4549372A1

公开(公告)日：2025-05-07

申请号：EP24209213.8

申请日：2024-10-28

Applicant: STMicroelectronics International N.V.

Inventor： CORSO, Lorenzo ,  VERCESI, Federico ,  GATTERE, Gabriele ,  GUERRA, Anna ,  VALZASINA, Carlo ,  ALLEGATO, Giorgio

IPC: B81B7/00

Abstract: MEMS device (50) having a substrate (52) of semiconductor material; a first structural layer (54) of semiconductor material, on the substrate (52); a second structural layer (55) of semiconductor material, on the first structural layer (54); an active portion (83), accommodating active structures (85, 86) formed in the first structural layer (54) and/or in the second structural layer (55); a connection portion (56), accommodating a plurality of connection structures (57) and arranged laterally to the active portion (85, 86); and a plurality of conductive regions (60), arranged on the substrate (52) and extending between the active portion (85, 86) and the connection portion (56). Each connection structure (57) is formed by a first connection portion (57A), in electrical contact with a respective conductive region (60A) and formed in the first structural layer (54), and by a second connection portion (57B), on the first connection portion (57A) and in electrical continuity therewith, the second connection portion (57) formed in the second structural layer (55). The first connection portion (57A) has a greater thickness than the second connection portion (57B).