公开(公告)号：EP4467951A1

公开(公告)日：2024-11-27

申请号：EP24177856.2

申请日：2024-05-24

Applicant: STMicroelectronics International N.V.

Inventor： NICOLI, Silvia ,  ALLEGATO, Giorgio ,  DANIELE, Filippo ,  NOMELLINI, Andrea ,  TURI, Maria Carolina

IPC: G01L9/00 ,  G01L19/00 ,  G01L23/12

Abstract: MEMS pressure transducer (1) including: a semiconductor body (2); a lower dielectric region (4,6), arranged above the semiconductor body (2); a fixed electrode region (12) and a lower anchoring region (14), which are formed by conductive material, are arranged on the lower dielectric region (4,6) and are laterally separated from each other; a membrane (55) of conductive material, which is suspended above the fixed electrode region (12), so as to delimit a cavity (39) upwardly, the fixed electrode region (12) facing the cavity, the membrane (55) being deformable as a function of pressure and forming a variable capacitor together with the fixed electrode region (12); and an upper anchoring region (37") of conductive material, which laterally delimits the cavity (39) and is interposed, in direct contact, between the membrane (55) and the lower anchoring region (14).

公开(公告)号：EP4549372A1

公开(公告)日：2025-05-07

申请号：EP24209213.8

申请日：2024-10-28

Applicant: STMicroelectronics International N.V.

Inventor： CORSO, Lorenzo ,  VERCESI, Federico ,  GATTERE, Gabriele ,  GUERRA, Anna ,  VALZASINA, Carlo ,  ALLEGATO, Giorgio

IPC: B81B7/00

Abstract: MEMS device (50) having a substrate (52) of semiconductor material; a first structural layer (54) of semiconductor material, on the substrate (52); a second structural layer (55) of semiconductor material, on the first structural layer (54); an active portion (83), accommodating active structures (85, 86) formed in the first structural layer (54) and/or in the second structural layer (55); a connection portion (56), accommodating a plurality of connection structures (57) and arranged laterally to the active portion (85, 86); and a plurality of conductive regions (60), arranged on the substrate (52) and extending between the active portion (85, 86) and the connection portion (56). Each connection structure (57) is formed by a first connection portion (57A), in electrical contact with a respective conductive region (60A) and formed in the first structural layer (54), and by a second connection portion (57B), on the first connection portion (57A) and in electrical continuity therewith, the second connection portion (57) formed in the second structural layer (55). The first connection portion (57A) has a greater thickness than the second connection portion (57B).

公开(公告)号：EP4488224A1

公开(公告)日：2025-01-08

申请号：EP24181025.8

申请日：2024-06-10

Applicant: STMicroelectronics International N.V.

Inventor： ALLEGATO, Giorgio ,  FERRARI, Paolo ,  OGGIONI, Laura

IPC: B81B7/02

Abstract: Described herein is a microelectromechanical sensor device (100), comprising: a stack (1) of a first die (2) that integrates a pressure-detection structure (4) and a second die (6) that integrates an inertial detection structure (8), the first die (2) constituting a cap for the inertial detection structure (8) and being bonded to the second die (6) so as to define a hermetic cavity (28, 34). The first die (2) has a first substrate (20), having a front surface (20a) and a rear surface (20b) that is bonded to said second die (6), a buried cavity (22) being buried and entirely contained in the first substrate (20) and being arranged in a position corresponding to the front surface (20a), from which it is separated by a membrane (24). In particular, the aforesaid buried cavity (22) is distinct and separate from the hermetic cavity (28, 34).