公开(公告)号：EP4520716A1

公开(公告)日：2025-03-12

申请号：EP24195132.6

申请日：2024-08-19

Applicant: STMicroelectronics International N.V.

Inventor： NOMELLINI, Andrea ,  GELMI, Ilaria ,  CAPRA, Federica ,  VIMERCATI, Michele ,  LAMAGNA, Luca

IPC: B81B3/00

Abstract: A process for manufacturing a microelectromechanical device (10) includes: on a body (13) containing semiconductor material, forming a sacrificial layer (18) of dielectric material having a first surface (18a), opposite to the body (13); conferring a sacrificial surface roughness to the first surface (18a) of the sacrificial layer (18); on the first surface (18a) of the sacrificial layer (18), forming a structural layer (112) of semiconductor material having a second surface (112a) in contact with the first surface (18a) of the sacrificial layer (18). Conferring sacrificial surface roughness to the first surface (18a) of the sacrificial layer (18) includes: on the sacrificial layer (18), forming a transfer layer (19) of semiconductor material with intrinsic porosity; and partially removing the sacrificial layer (18) through the transfer layer (19).