公开(公告)号：EP4467951A1

公开(公告)日：2024-11-27

申请号：EP24177856.2

申请日：2024-05-24

Applicant: STMicroelectronics International N.V.

Inventor： NICOLI, Silvia ,  ALLEGATO, Giorgio ,  DANIELE, Filippo ,  NOMELLINI, Andrea ,  TURI, Maria Carolina

IPC: G01L9/00 ,  G01L19/00 ,  G01L23/12

Abstract: MEMS pressure transducer (1) including: a semiconductor body (2); a lower dielectric region (4,6), arranged above the semiconductor body (2); a fixed electrode region (12) and a lower anchoring region (14), which are formed by conductive material, are arranged on the lower dielectric region (4,6) and are laterally separated from each other; a membrane (55) of conductive material, which is suspended above the fixed electrode region (12), so as to delimit a cavity (39) upwardly, the fixed electrode region (12) facing the cavity, the membrane (55) being deformable as a function of pressure and forming a variable capacitor together with the fixed electrode region (12); and an upper anchoring region (37") of conductive material, which laterally delimits the cavity (39) and is interposed, in direct contact, between the membrane (55) and the lower anchoring region (14).

公开(公告)号：EP4520716A1

公开(公告)日：2025-03-12

申请号：EP24195132.6

申请日：2024-08-19

Applicant: STMicroelectronics International N.V.

Inventor： NOMELLINI, Andrea ,  GELMI, Ilaria ,  CAPRA, Federica ,  VIMERCATI, Michele ,  LAMAGNA, Luca

IPC: B81B3/00

Abstract: A process for manufacturing a microelectromechanical device (10) includes: on a body (13) containing semiconductor material, forming a sacrificial layer (18) of dielectric material having a first surface (18a), opposite to the body (13); conferring a sacrificial surface roughness to the first surface (18a) of the sacrificial layer (18); on the first surface (18a) of the sacrificial layer (18), forming a structural layer (112) of semiconductor material having a second surface (112a) in contact with the first surface (18a) of the sacrificial layer (18). Conferring sacrificial surface roughness to the first surface (18a) of the sacrificial layer (18) includes: on the sacrificial layer (18), forming a transfer layer (19) of semiconductor material with intrinsic porosity; and partially removing the sacrificial layer (18) through the transfer layer (19).

公开(公告)号：EP4480899A1

公开(公告)日：2024-12-25

申请号：EP24180148.9

申请日：2024-06-05

Applicant: STMicroelectronics International N.V.

Inventor： SEGHIZZI, Luca ,  VERCESI, Federico ,  LONGONI, Gianluca ,  NOMELLINI, Andrea

IPC: B81B7/02 ,  G01P5/00 ,  G01P15/08 ,  G01P15/09 ,  B81B7/00

Abstract: Inertial MEMS device (2) wherein an inertial element (35; 36), responsive to movement, has a movable structure (43; 44; 46) formed in a first structural layer (53) of semiconductor material. A suspended structure (57) extends above the movable structure (43; 44; 46), at a distance therefrom. The suspended structure (57) is formed in a second structural layer (54) of semiconductor material and carries a piezoelectric structure (56). The suspended structure (57) and the piezoelectric structure (56) form a wake-up element (10) configured to generate an activation signal (a1) in presence of vibrations or shocks. The inertial element (35) and the wake-up element (10) are contained in a chamber (93) formed by a substrate (50) and a cap (55), together with peripheral portions of the first and the second structural layers (53, 54).