公开(公告)号：EP2551910A1

公开(公告)日：2013-01-30

申请号：EP12178140.5

申请日：2012-07-26

Applicant: STMicroelectronics S.r.l.

Inventor： Corona, Donato ,  Sammatrice, Giovanni ,  Amara, Sebastiano ,  Pisano, Salvatore ,  Grimaldi, Antonio Giuseppe

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/739 ,  H01L21/331

Abstract: An insulated gate semiconductor device (30; 60; 90; 100; 150), comprising: a semiconductor body (32, 34, 36; 102, 104, 106) having a front side (32a; 36a; 106a) and a back side (32b; 102b) opposite to one another; a drift region (36; 106'), which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region (38; 108; 156) having a second type of conductivity, which extends in the drift region facing the front side of the semiconductor body; a source region (40; 113), which extends in the body region and has the first type of conductivity; and a buried region (44; 114) having the second type of conductivity, which extends in the drift region at a distance from the body region and at least partially aligned to the body region in a direction (Z) orthogonal to the front side and to the back side.

Abstract translation: 一种绝缘栅半导体器件（30; 60; 90; 100; 150），包括：半导体主体（32，34，36; 102，104，106）具有前侧（32A; 36A; 106A）和背面 （32B; 102B）彼此相对; 的漂移区（36; 106“），其在半导体本体延伸，并且具有第一导电类型和第一掺杂值; （38; 108; 156）是具有第二型导电性的，它在朝向半导体本体的前侧的漂移区延伸的体区; 一个源极区（40; 113），其中在所述主体区域延伸，并且具有第一导电类型的; 和埋入区（44; 114）具有第二导电类型，其中在所述漂移区在从所述主体区域的距离延伸，并且至少部分地对准到主体区的方向（Z）正交于所述前侧和 到背面。

公开(公告)号：EP2551910B1

公开(公告)日：2020-05-06

申请号：EP12178140.5

申请日：2012-07-26

Applicant: STMicroelectronics S.r.l.

Inventor： Corona, Donato ,  Sammatrice, Giovanni ,  Amara, Sebastiano ,  Pisano, Salvatore ,  Grimaldi, Antonio Giuseppe

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/739 ,  H01L21/331