公开(公告)号：EP1659636A1

公开(公告)日：2006-05-24

申请号：EP05025285.7

申请日：2005-11-18

Applicant: STMicroelectronics S.r.l.

Inventor： Ferruccio, Frisina ,  Ferla, Giuseppe ,  Magri', Angelo ,  Grimaldi, Antonio Giuseppe ,  Bazzano, Gaetano

IPC: H01L29/78 ,  H01L29/49

CPC classification number: H01L29/7802 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/4983

Abstract: Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors (2) and a gate structure (12) comprising a plurality of conductive strips (8) realised with a first conductive material such as polysilicon, a plurality of gate fingers or metallic tracks (11) connected to a gate pad (30) and at least a connection layer (20) arranged in series to at least one of said conductive strip (8). Such gate structure (12) comprising at least a plurality of independent islands (10) formed on the upper surface (9) of the conductive strips (8) and suitably formed on the connection layers (20). Said islands (10) being realised with at least one second conductive material such as silicide.

Abstract translation: 包括多个基本功率MOS晶体管（2）和栅极结构（12）的功率电子MOS器件包括由诸如多晶硅的第一导电材料实现的多个导电条（8），多个栅极指或者 连接到栅极焊盘（30）的金属轨道（11）和至少与所述导电条（8）中的至少一个串联布置的连接层（20）。 这种栅极结构（12）包括形成在导电条（8）的上表面（9）上并适当地形成在连接层（20）上的至少多个独立的岛（10）。 所述岛（10）用至少一种第二导电材料（例如硅化物）实现。

公开(公告)号：EP2551910B1

公开(公告)日：2020-05-06

申请号：EP12178140.5

申请日：2012-07-26

Applicant: STMicroelectronics S.r.l.

Inventor： Corona, Donato ,  Sammatrice, Giovanni ,  Amara, Sebastiano ,  Pisano, Salvatore ,  Grimaldi, Antonio Giuseppe

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/739 ,  H01L21/331

公开(公告)号：EP1659636B1

公开(公告)日：2009-11-04

申请号：EP05025285.7

申请日：2005-11-18

Applicant: STMicroelectronics S.r.l.

Inventor： Ferruccio, Frisina ,  Ferla, Giuseppe ,  Magri', Angelo ,  Grimaldi, Antonio Giuseppe ,  Bazzano, Gaetano

IPC: H01L29/78 ,  H01L29/49

CPC classification number: H01L29/7802 ,  H01L29/4238 ,  H01L29/4933 ,  H01L29/4983

Abstract: Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors (2) and a gate structure (12) comprising a plurality of conductive strips (8) realised with a first conductive material such as polysilicon, a plurality of gate fingers or metallic tracks (11) connected to a gate pad (30) and at least a connection layer (20) arranged in series to at least one of said conductive strip (8). Such gate structure (12) comprising at least a plurality of independent islands (10) formed on the upper surface (9) of the conductive strips (8) and suitably formed on the connection layers (20). Said islands (10) being realised with at least one second conductive material such as silicide.

公开(公告)号：EP2551910A1

公开(公告)日：2013-01-30

申请号：EP12178140.5

申请日：2012-07-26

Applicant: STMicroelectronics S.r.l.

Inventor： Corona, Donato ,  Sammatrice, Giovanni ,  Amara, Sebastiano ,  Pisano, Salvatore ,  Grimaldi, Antonio Giuseppe

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/739 ,  H01L21/331

Abstract: An insulated gate semiconductor device (30; 60; 90; 100; 150), comprising: a semiconductor body (32, 34, 36; 102, 104, 106) having a front side (32a; 36a; 106a) and a back side (32b; 102b) opposite to one another; a drift region (36; 106'), which extends in the semiconductor body and has a first type of conductivity and a first doping value; a body region (38; 108; 156) having a second type of conductivity, which extends in the drift region facing the front side of the semiconductor body; a source region (40; 113), which extends in the body region and has the first type of conductivity; and a buried region (44; 114) having the second type of conductivity, which extends in the drift region at a distance from the body region and at least partially aligned to the body region in a direction (Z) orthogonal to the front side and to the back side.

Abstract translation: 一种绝缘栅半导体器件（30; 60; 90; 100; 150），包括：半导体主体（32，34，36; 102，104，106）具有前侧（32A; 36A; 106A）和背面 （32B; 102B）彼此相对; 的漂移区（36; 106“），其在半导体本体延伸，并且具有第一导电类型和第一掺杂值; （38; 108; 156）是具有第二型导电性的，它在朝向半导体本体的前侧的漂移区延伸的体区; 一个源极区（40; 113），其中在所述主体区域延伸，并且具有第一导电类型的; 和埋入区（44; 114）具有第二导电类型，其中在所述漂移区在从所述主体区域的距离延伸，并且至少部分地对准到主体区的方向（Z）正交于所述前侧和 到背面。

公开(公告)号：EP2317553A1

公开(公告)日：2011-05-04

申请号：EP10188931.9

申请日：2010-10-26

Applicant: STMicroelectronics S.r.l.

Inventor： Micciche', Monica ,  Grimaldi, Antonio Giuseppe ,  Bazzano, Gaetano ,  Frazzetto, Nicolò

IPC: H01L27/06 ,  H01L29/78

CPC classification number: H01L27/0694 ,  H01L29/0619 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7806 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7813

Abstract: A semiconductor structure (100; 200; 300) comprising; a substrate (5; 302) of semiconductor material of a first type of conductivity; a first semiconductor layer (7) set in direct electrical contact with the substrate on a first side (2) of the substrate; a second semiconductor layer (8) set in direct electrical contact with the substrate on a second side (4) of the substrate; a first active electronic device (10; 303) formed in the first semiconductor layer (7); and a second active electronic device (12; 62; 305) formed in the second semiconductor layer (8).

Abstract translation: 一种半导体结构（100; 200; 300），包括： 具有第一类导电性的半导体材料的衬底（5; 302）; 在衬底的第一侧（2）上与衬底直接电接触的第一半导体层（7）; 在所述基板的第二侧（4）上与所述基板直接电接触的第二半导体层（8）; 形成在第一半导体层（7）中的第一有源电子器件（10; 303）。 和形成在第二半导体层（8）中的第二有源电子器件（12; 62; 305）。