公开(公告)号：EP3238629A1

公开(公告)日：2017-11-01

申请号：EP16206869.6

申请日：2016-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： MORELLI, Marco ,  QUAGLIA, Fabio ,  TOIA, Fabrizio Fausto Renzo ,  SAMBI, Marco ,  BARILLARO, Giuseppe

IPC: A61B8/00 ,  G01N29/32 ,  B06B1/02 ,  H04R19/00

CPC classification number: B06B1/0292 ,  A61B8/4483 ,  B06B1/0644 ,  B06B1/067 ,  B06B1/0685 ,  G10K9/22 ,  G10K11/02 ,  H04R19/005

Abstract: The acoustic device has a micromachined acoustic transducer element (15); an acoustically attenuating region (40); and an acoustic matching region (32) arranged between the acoustic transducer element (15) and the acoustically attenuating region (40). The acoustic transducer element (15) is formed in a first substrate (25) housing a cavity (19) delimiting a membrane (16). A second substrate (30) of semiconductor material integrating an electronic circuit is arranged between the acoustic transducer element (15) and the acoustically attenuating region (40). The acoustic matching region (32) has a first interface (32A) with the second substrate (30) and a second interface (32B) with the acoustically attenuating region (40). The acoustic matching region (32) has an impedance matched to the impedance of the second substrate (30) in proximity of the first interface (32A), and an impedance matched to the acoustically attenuating region (40) in proximity of the second interface (32B).

Abstract translation: 声学装置具有微机械声学换能器元件（15）; 一个声学衰减区域（40）; 和布置在声学换能器元件（15）和声学衰减区域（40）之间的声学​​匹配区域（32）。 声换能器元件（15）形成在容纳界定膜（16）的空腔（19）的第一基板（25）中。 集成电子电路的半导体材料的第二衬底（30）布置在声学换能器元件（15）与声学衰减区域（40）之间。 声匹配区（32）具有与第二基板（30）的第一界面（32A）以及与声学衰减区（40）的第二界面（32B）。 声匹配区域（32）具有与第一接口（32A）附近的第二基板（30）的阻抗匹配的阻抗以及与第二接口（32A）附近的声学衰减区域（40）匹配的阻抗 32B）。

公开(公告)号：EP3118905A1

公开(公告)日：2017-01-18

申请号：EP16175646.5

申请日：2016-06-22

Applicant: STMicroelectronics S.r.l.

Inventor： MORELLI, Marco ,  TOIA, Fabrizio Fausto Renzo ,  BARILLARO, Giuseppe ,  SAMBI, Marco

IPC: H01L33/14 ,  H01L33/34

Abstract: A light-emitting device (1), comprising: a semiconductor body (2), having a first conductivity type, with a front side (2a) and a back side (2b); a porous-silicon region (10), which extends in the semiconductor body (2) at the front side (2a); and a cathode region (8) in direct lateral contact with the porous-silicon region (10). The light-emitting device further comprises a barrier region (12) of electrically insulating material, which extends in direct contact with the cathode region (8) at the bottom side of the cathode region so that in use an electric current flows in the semiconductor body exclusively through lateral portions of the cathode region (8).

Abstract translation: 一种发光器件（1），包括：具有第一导电类型的具有前侧（2a）和后侧（2b）的半导体本体（2）; 在前侧（2a）上在半导体本体（2）中延伸的多孔硅区域（10）; 以及与多孔硅区域（10）直接侧向接触的阴极区域（8）。 发光装置还包括电绝缘材料的阻挡区域（12），其在阴极区域的底侧处与阴极区域（8）直接接触地延伸，使得在使用中电流在半导体本体 仅通过阴极区域（8）的横向部分。

公开(公告)号：EP3118905B1

公开(公告)日：2019-10-30

申请号：EP16175646.5

申请日：2016-06-22

Applicant: STMicroelectronics S.r.l.

Inventor： MORELLI, Marco ,  TOIA, Fabrizio Fausto Renzo ,  BARILLARO, Giuseppe ,  SAMBI, Marco

IPC: H01L33/14 ,  H01L33/34

公开(公告)号：EP3511988A1

公开(公告)日：2019-07-17

申请号：EP19151957.8

申请日：2019-01-15

Applicant: STMicroelectronics S.r.l.

Inventor： PATTI, Davide Giuseppe ,  SAMBI, Marco ,  TOIA, Fabrizio Fausto Renzo ,  MARIANI, Simone Dario ,  PIZZI, Elisabetta ,  BARILLARO, Giuseppe

IPC: H01L29/78 ,  H01L29/739 ,  H01L21/02

Abstract: A vertical-conduction semiconductor electronic device (40, comprising: a semiconductor body (1, 2); a body region (30) in the semiconductor body (1, 2); a source terminal (32) in the body region (30); a drain terminal (38) spatially opposite to the source region; and a trench gate (6, 14, 16', 24) extending in depth in the semiconductor body through the body region (30) and the source region (32). The trench gate includes a dielectric region (14) of porous silicon oxide buried in the semiconductor body, and a gate conductive region (24) extending between the dielectric region (14) of porous silicon oxide and said first side (2a).