公开(公告)号：EP4001866A1

公开(公告)日：2022-05-25

申请号：EP21209147.4

申请日：2021-11-18

Applicant: STMicroelectronics S.r.l.

Inventor： VAIANA, Michele ,  DUQI, Enri ,  CASTAGNA, Maria Eloisa

IPC: G01J3/02 ,  G01J3/28 ,  G01J3/18 ,  G02B26/02

Abstract: Radiation sensor including a detection assembly (102; 202) and a chopper assembly (101), which are mechanically coupled to delimit a main cavity (61; 216); and wherein the chopper assembly (101) includes: a suspended movable structure (55), which extends in the main cavity (61; 261); and an actuation structure (63, 65), which is electrically controllable to cause a change of position of the suspended movable structure (55). The detection unit (102; 202) includes a detection structure (80; 180; 280; 380), which faces the main cavity (61; 261) and includes a number of detection devices (94; 194). The suspended movable structure (55) includes a first shield (34) of conductive material, which shields the detection devices (94) from the radiation, the shielding of the detection devices (94) being a function of the position of the suspended movable structure (55).

公开(公告)号：EP4155696A1

公开(公告)日：2023-03-29

申请号：EP22195319.3

申请日：2022-09-13

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  CASTAGNA, Maria Eloisa

IPC: G01J5/12 ,  H10N10/17 ,  H10N19/00

Abstract: Integrated thermal sensor having a housing (21) delimiting an internal space (26). A support region (30) extends through the internal space; a plurality of thermocouple elements (31) are carried by the support region (30) and are electrically coupled to each other. Each thermocouple element (31) is formed by a first and a second thermoelectrically active region (34, 35) of a first and, respectively, a second thermoelectrically active material, the first thermoelectrically active material having a first Seeback coefficient, the second thermoelectrically active material having a second Seeback coefficient, other than the first Seeback coefficient. At least one of the first and second thermoelectrically active regions (34, 35) is a silicon-based material. The first and second thermoelectrically active regions (34, 35) of each thermocouple element (31) are formed by respective elongated regions extending at a mutual distance into the internal space (26) of the housing (21), from and transversely to the support region (300).

公开(公告)号：EP4006509A1

公开(公告)日：2022-06-01

申请号：EP21211154.6

申请日：2021-11-29

Applicant: STMicroelectronics S.r.l.

Inventor： BRUNO, Giuseppe ,  VAIANA, Michele ,  CASTAGNA, Maria Eloisa ,  RECCHIA, Angelo

IPC: G01J5/02 ,  G01J5/12 ,  G01J5/14 ,  G01J5/20 ,  H01L27/146

Abstract: A thermographic sensor (105) is proposed. The thermographic sensor (105) comprises one or more thermo-couples (305), each for providing a sensing voltage depending on a difference between a temperature of a hot joint (H) and a temperature of a cold joint (P-N) of the thermo-couple (305); the thermographic sensor (105) further comprises one or more sensing transistors (310), each driven according to the sensing voltages of one or more corresponding thermo-couples (305) for providing a sensing electrical signal depending on its temperature and on the corresponding sensing voltages. A thermographic device (100) comprising the thermographic sensor (105) and a corresponding signal processing circuit (110), and a system (700) comprising one or more thermographic devices (100) are also proposed.