公开(公告)号：EP1742251A1

公开(公告)日：2007-01-10

申请号：EP05425477.6

申请日：2005-07-05

Applicant: STMicroelectronics S.r.l.

Inventor： Leonardi, Salvatore ,  Caligiore, Claudia

IPC: H01L21/20 ,  H01L21/336

CPC classification number: H01L21/02686 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1229 ,  H01L27/1281 ,  H01L29/66757

Abstract: In a process for manufacturing a thin-film transistor device the following steps are envisaged: forming a dielectric insulation layer (16) on a substrate (15); forming an amorphous silicon layer (17) on the dielectric insulation layer (16); crystallizing the amorphous silicon layer (17), so as to obtain polycrystalline silicon (19); forming gate structures (18b; 20, 24) on the polycrystalline silicon (19); and forming first doped regions (27-30) within the polycrystalline silicon (19) laterally with respect to the gate structures (18b; 20, 24). During the crystallizing step, the following steps are envisaged: forming first capping dielectric regions (18a) on the amorphous silicon layer (17); and then irradiating the amorphous silicon layer (17) using a laser so as to form active areas (19) of polycrystalline silicon separated by separation portions (17a) of amorphous silicon underlying the first capping dielectric regions (18a).

Abstract translation: 在制造薄膜晶体管器件的工艺中，设想以下步骤：在衬底（15）上形成绝缘层（16）; 在绝缘层（16）上形成非晶硅层（17）; 使非晶硅层（17）结晶，得到多晶硅（19）; 在多晶硅（19）上形成栅极结构（18b; 20,24）; 以及在所述多晶硅（19）内相对于所述栅极结构（18b; 20,24）横向形成第一掺杂区域（27-30）。 在结晶步骤中，设想以下步骤：在非晶硅层（17）上形成第一封盖介电区（18a）; 然后使用激光照射非晶硅层（17），以形成由第一覆盖电介质区域（18a）下面的非晶硅的分离部分（17a）分离的多晶硅的有源区域（19）。

公开(公告)号：EP1858075A1

公开(公告)日：2007-11-21

申请号：EP06425328.9

申请日：2006-05-15

Applicant: STMicroelectronics S.r.l.

Inventor： Leonardi, Salvatore ,  Coffa, Salvatore ,  Caligiore, Claudia ,  Tramontana, Francesca Paola

IPC: H01L21/84 ,  H01L27/12

CPC classification number: H01L21/84 ,  H01L27/12

Abstract: A process is described for integrating, on an inert substrate (24), a device (20) having at least one passive component (21, 22, 23) and one active component (25). Advantageously, the process comprises the steps of:
- deposition of a protection dielectric layer (27) on the inert substrate (24);
- formation of a polysilicon island (29) on the protection dielectric layer (27);
- integration of the active component (25) on the polysilicon island (29);
- deposition of the covering dielectric layer (32, 32a) on the protection dielectric layer (27) and on the active component (25);
- integration of the passive component (21, 22, 23) on the covering dielectric layer (32, 32a);
- formation of first contact structures in openings realised in the covering dielectric layer (32, 32a) in correspondence with active regions of the active component (25); and
- formation of second contact structures in correspondence with the passive component (21, 22, 23).
An integrated device obtained through this process is also described.

Abstract translation: 一种用于描述的过程是INTEGRA婷到惰性基质（24），具有至少一个无源元件（21，22，23）和一种活性组分（25）的装置（20）。 有利地，该方法包括以下步骤： - 在惰性基质的电介质保护层（27）（24）的沉积; - 形成一个多晶硅冰岛（29）的保护介电层（27）上的; - 在多晶硅中的活性组分（25）的集成冰岛（29）; - 保护介电层（27）上覆盖电介质层（32，32A）的沉积和活性成分（25）上; - 覆盖介电层（32，32A）上的无源部件（21，22，23）的集成; - 在与所述活性组分（25）的有源区相对应的覆盖电介质层（32，32A）在实现开口形成第一接触结构; 和 - 形成第二接触结构中对应于所述无源部件（21，22，23）。 被如此描述通过该方法获得的集成器件。