Abstract:
A process is described for integrating, on an inert substrate (24), a device (20) having at least one passive component (21, 22, 23) and one active component (25). Advantageously, the process comprises the steps of: - deposition of a protection dielectric layer (27) on the inert substrate (24); - formation of a polysilicon island (29) on the protection dielectric layer (27); - integration of the active component (25) on the polysilicon island (29); - deposition of the covering dielectric layer (32, 32a) on the protection dielectric layer (27) and on the active component (25); - integration of the passive component (21, 22, 23) on the covering dielectric layer (32, 32a); - formation of first contact structures in openings realised in the covering dielectric layer (32, 32a) in correspondence with active regions of the active component (25); and - formation of second contact structures in correspondence with the passive component (21, 22, 23). An integrated device obtained through this process is also described.