Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device
    1.
    发明公开
    Process for integrating on an inert substrate a device comprising at least a passive element and an active element and corresponding integrated device 审中-公开
    具有至少一个无源和有源元件和相关联的集成部件惰性基板上的部件的一体化的方法

    公开(公告)号:EP1858075A1

    公开(公告)日:2007-11-21

    申请号:EP06425328.9

    申请日:2006-05-15

    CPC classification number: H01L21/84 H01L27/12

    Abstract: A process is described for integrating, on an inert substrate (24), a device (20) having at least one passive component (21, 22, 23) and one active component (25). Advantageously, the process comprises the steps of:
    - deposition of a protection dielectric layer (27) on the inert substrate (24);
    - formation of a polysilicon island (29) on the protection dielectric layer (27);
    - integration of the active component (25) on the polysilicon island (29);
    - deposition of the covering dielectric layer (32, 32a) on the protection dielectric layer (27) and on the active component (25);
    - integration of the passive component (21, 22, 23) on the covering dielectric layer (32, 32a);
    - formation of first contact structures in openings realised in the covering dielectric layer (32, 32a) in correspondence with active regions of the active component (25); and
    - formation of second contact structures in correspondence with the passive component (21, 22, 23).
    An integrated device obtained through this process is also described.

    Abstract translation: 一种用于描述的过程是INTEGRA婷到惰性基质(24),具有至少一个无源元件(21,22,23)和一种活性组分(25)的装置(20)。 有利地,该方法包括以下步骤: - 在惰性基质的电介质保护层(27)(24)的沉积; - 形成一个多晶硅冰岛(29)的保护介电层(27)上的; - 在多晶硅中的活性组分(25)的集成冰岛(29); - 保护介电层(27)上覆盖电介质层(32,32A)的沉积和活性成分(25)上; - 覆盖介电层(32,32A)上的无源部件(21,22,23)的集成; - 在与所述活性组分(25)的有源区相对应的覆盖电介质层(32,32A)在实现开口形成第一接触结构; 和 - 形成第二接触结构中对应于所述无源部件(21,22,23)。 被如此描述通过该方法获得的集成器件。

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