公开(公告)号：EP1324348A1

公开(公告)日：2003-07-02

申请号：EP01830832.0

申请日：2001-12-28

Applicant: STMicroelectronics S.r.l.

Inventor： Geraci, Antonino ,  Campisi, Alberto ,  Bedarida, Lorenzo ,  Bartoli, Simone

IPC: G11C29/00

CPC classification number: G11C29/44

Abstract: An autotesting method of a cells matrix of a memory device is disclosed which comprises the steps of:

reading the values contained in a plurality of the memory cells;
comparing the read values with reference values;
signalling mismatch of the read values with the reference values as an error situation; and
storing the error situations.

In the autotesting method, the reading, comparing, signalling, and storing steps are repeated for all the memory cells in an matrix column.
The autotesting method according to the invention further comprises the steps of:

storing the addresses of any columns having at least one error situation; and
repeating all the preceding steps according to a step of scanning all the matrix columns.

Advantageously according to the invention, all said steps are internally realized in the memory device.
Also disclosed is a memory device with a autotesting architecture, which device is adapted to implement the autotesting method according to the invention.

Abstract translation: 公开了一种存储器件的单元矩阵的自动测试方法，其包括以下步骤：读取多个存储器单元中包含的值; 将读取的值与参考值进行比较; 将读取值与参考值的信令不匹配作为错误情况; 并存储错误情况。 在自动测试方法中，对矩阵列中的所有存储单元重复读取，比较，信令和存储步骤。 根据本发明的自动测试方法还包括以下步骤：存储具有至少一个错误情况的任何列的地址; 并且根据扫描所有矩阵列的步骤重复所有前述步骤。 有利地，根据本发明，所有所述步骤在内部实现在存储器件中。 还公开了具有自动测试架构的存储器件，该器件适于实现根据本发明的自动测试方法。