公开(公告)号：EP1798764A1

公开(公告)日：2007-06-20

申请号：EP05425885.0

申请日：2005-12-14

Applicant: STMicroelectronics S.r.l.

Inventor： Ottaviani, Giampiero c/o Masem ,  Corni, Federico c/o Masem ,  Ferrari, Paolo ,  Villa, Flavio Francesco

IPC: H01L21/762

CPC classification number: H01L21/76254

Abstract: In order to manufacture a layer (15) of semiconductor material, a first wafer (1) of semiconductor material is subjected to implantation to form a defect layer (6) at a distance from a first face; the first wafer is bonded to a second wafer (10), by putting an insulating layer present on the second wafer in contact with the first face of the first wafer. Then, hydrogen atoms (13) are introduced into the first wafer (1) through a second face (3) at an energy such as to avoid defects to be generated in the first wafer and at a temperature lower than 600°C. Thereby, the first wafer splits into a usable layer (15), bonded to the second wafer (10), and a remaining layer (16) comprised between the defect layer (6) and the second face of the first wafer. Prior to bonding, the first wafer is subjected to processing steps for obtaining integrated components (7).

Abstract translation: 为了制造半导体材料层（15），对半导体材料的第一晶片（1）进行注入以形成距离第一面一定距离的缺陷层（6）; 通过将存在于第二晶片上的绝缘层与第一晶片的第一面接触来将第一晶片接合到第二晶片（10）。 然后，氢原子（13）通过第二面（3）以能量被引入到第一晶片（1）中，以避免在第一晶片中以及在低于600℃的温度下产生缺陷。 由此，第一晶片分裂成与第二晶片（10）接合的可用层（15），以及包含在缺陷层（6）和第一晶片的第二面之间的剩余层（16）。 在接合之前，第一晶片经受用于获得集成部件（7）的处理步骤。