公开(公告)号：EP1427011B1

公开(公告)日：2008-09-10

申请号：EP02425746.1

申请日：2002-12-04

Applicant: STMicroelectronics S.r.l.

Inventor： D'Arrigo, Giuseppe Alessio Maria ,  Spinella, Rosario Corrado ,  Arena, Giuseppe ,  Lorenti, Simona

IPC: H01L21/764 ,  H01L21/306 ,  H01L21/3065 ,  B81C1/00

CPC classification number: B81C1/00507 ,  G01N27/447 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/76264 ,  H01L21/76289 ,  H01L21/764

公开(公告)号：EP1427011A1

公开(公告)日：2004-06-09

申请号：EP02425746.1

申请日：2002-12-04

Applicant: STMicroelectronics S.r.l.

Inventor： D'Arrigo, Giuseppe Alessio Maria ,  Spinella, Rosario Corrado ,  Arena, Giuseppe ,  Lorenti, Simona

IPC: H01L21/764 ,  H01L21/306 ,  H01L21/3065 ,  B81C1/00

CPC classification number: B81C1/00507 ,  G01N27/447 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/76264 ,  H01L21/76289 ,  H01L21/764

Abstract: The present invention describes a process for realizing buried microchannels (10) in an integrated structure (1) comprising a monocrystalline silicon substrate (2).
Advantageously, according to the invention, the process provides to form in the substrate (2) at least one trench (4) and to obtain microchannels (10) starting from a deep cavity characterised by a small surface port obtained through anisotropic etching of the at least one trench (4).
Microchannels (10) are completely buried in the substrate (2) in a completely microcrystalline structure.

Abstract translation: 本发明描述了在包括单晶硅衬底（2）的集成结构（1）中实现埋入式微通道（10）的方法。 有利地，根据本发明，该方法提供在衬底（2）中形成至少一个沟槽（4）并且从深空腔开始获得微通道（10），其特征在于通过各向异性获得的小表面端口 蚀刻所述至少一个沟槽（4）。 微通道（10）以完全微晶结构完全掩埋在基板（2）中。