公开(公告)号：EP1215679B1

公开(公告)日：2004-03-03

申请号：EP01129768.6

申请日：2001-12-13

Applicant: STMicroelectronics S.r.l.

Inventor： De Sandre, Guido ,  Pasotti, Marco ,  Rolandi, Pier Luigi ,  Guaitini, Giovani ,  Iezzi, David ,  Poles, Marco

IPC: G11C11/56

CPC classification number: G11C11/5635 ,  G11C11/5621 ,  G11C11/5628 ,  G11C17/146

公开(公告)号：EP1215679A1

公开(公告)日：2002-06-19

申请号：EP01129768.6

申请日：2001-12-13

Applicant: STMicroelectronics S.r.l.

Inventor： De Sandre, Guido ,  Pasotti, Marco ,  Rolandi, Pier Luigi ,  Guaitini, Giovani ,  Iezzi, David ,  Poles, Marco

IPC: G11C11/56

CPC classification number: G11C11/5635 ,  G11C11/5621 ,  G11C11/5628 ,  G11C17/146

Abstract: The invention relates to a programming method for a multilevel memory cell able to store a plurality of bits in a plurality of levels (N), which method comprises the phases of:

initially programming (I) a cell threshold value (VthDATI) to a first set of levels [O;(m-1)] being (m) a submultiple of the plurality (N) of levels of the multilevel cell;
reprogramming without erasing (II) another set of levels [m;(2m-1)] containing the same number of levels (m) as the first set;
reiterating (N R - 1 times) the reprogramming without erasing phase (III,IV, ...) until the levels (N) of the multilevel cell are exhausted.

The invention makes also reference to a multilevel memory device of the type comprising a plurality. of multilevel memory cells organised into sectors, the sectors being themselves split into a plurality of data units (UD) wherein a data updating operation is performed in parallel, the data units (UD) being programmed by means of the programming method according to the invention.

Abstract translation: 本发明涉及一种能够存储多个级别（N）中的多个位的多级存储器单元的编程方法，该方法包括以下阶段：首先将单元阈值（VthDATI）编程（I）到第一 层级ÄO;（m-1）Ü是（m）多级单元的多（N）个级别中的一个子; 重新编程而不擦除（II）另一组水平Äm;（2m-1）Ü包含与第一组相同数量的水平（m）; 重复（NR-1次）重编程而不擦除相位（III，IV，...），直到多级单元的电平（N）耗尽。 本发明还涉及包括多个类型的多级存储器件。 的多级存储器单元被组织成扇区，扇区本身被分成多个数据单元（UD），其中并行执行数据更新操作，数据单元（UD）通过根据本发明的编程方法进行编程 。