公开(公告)号：EP4220734A1

公开(公告)日：2023-08-02

申请号：EP23152421.6

申请日：2023-01-19

Applicant: STMicroelectronics S.r.l.

Inventor： IUCOLANO, Ferdinando ,  LO NIGRO, Raffaella ,  SCHILIRO', Emanuela ,  ROCCAFORTE, Fabrizio

IPC: H01L29/51 ,  H01L29/16 ,  H01L21/04 ,  H01L21/28 ,  H01L29/20 ,  H01L29/778 ,  H01L29/78

Abstract: A wide band gap transistor includes a semiconductor structure (2), having at least one wide band gap semiconductor layer (14, 16) of gallium nitride (GaN) or silicon carbide (SiC), an insulating gate structure (8) and a gate electrode (7), separated from the semiconductor structure (2) by the insulating gate structure (8). The insulating gate structure (8) contains a mixture of aluminum, hafnium and oxygen and is completely amorphous.