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公开(公告)号：EP0987715B1
公开(公告)日：2005-02-09
申请号：EP98830536.3
申请日：1998-09-15
Applicant: STMicroelectronics S.r.l.
Inventor： Pasotti, Marco , Lhermet, Frank , Rolandi, Pier Luigi
CPC classification number: G11C16/3431 , G11C11/5621 , G11C16/3418
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2.发明公开Method for controlled erasing memory devices, in particular analog and multi-level flash-EEPROM devices 失效用于受控擦除存储器设备，尤其是模拟或值-闪速EEPROM阵列的方法
公开(公告)号：EP0932161A1
公开(公告)日：1999-07-28
申请号：EP98830024.0
申请日：1998-01-22
Applicant: STMicroelectronics S.r.l.
Inventor： Pasotti, Marco , Canegallo, Roberto , Chioffi, Ernestina , Guaitini, Giovanni , Lhermet, Frank , Rolandi, Pierluigi
CPC classification number: G11C16/3409 , G11C11/56 , G11C11/5621 , G11C11/5635 , G11C16/16 , G11C16/3404 , G11C16/3445 , G11C27/005
Abstract: The controlled erase method includes supplying (40) at least one erase pulse to cells (3) of a memory array (2); comparing (53) the threshold voltage of the erased cells with a low threshold value; selectively soft-programming (62) the erased cells which have a threshold voltage lower than the low threshold value; and verifying (42) whether the erased cells have a threshold voltage lower than a high threshold value, which is higher than the low threshold value. If at least one predetermined number of erased cells has a threshold voltage which is higher than the high threshold value, an erase pulse is applied (44) to all the cells and the steps of comparing, selectively soft-programming and verifying are repeated.
Abstract translation: 受控擦除方法包括提供（40）至少一个擦除脉冲到单元的存储器阵列的（3）（2）; 比较（53）所述擦除单元具有低阈值的阈值电压; 选择性地软编程（62）的擦除单元，其具有阈值电压低于低阈值低; 和验证（42）是否擦除单元具有阈值电压高于高阈值的情况下，所有这是比所述低阈值高。 如果擦除单元中的至少一个预定数量的具有阈值电压的所有比该高阈值时，以擦除脉冲施加（44）到所有的细胞和进行比较的步骤，选择性地软编程，并且重复验证。
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3.发明授权Method for controlled erasing memory devices, in particular analog and multi-level flash-EEPROM devices 失效用于受控擦除存储器设备，尤其是模拟或值-闪速EEPROM阵列的方法
公开(公告)号：EP0932161B1
公开(公告)日：2004-06-09
申请号：EP98830024.0
申请日：1998-01-22
Applicant: STMicroelectronics S.r.l.
Inventor： Pasotti, Marco , Canegallo, Roberto , Chioffi, Ernestina , Guaitini, Giovanni , Lhermet, Frank , Rolandi, Pierluigi
CPC classification number: G11C16/3409 , G11C11/56 , G11C11/5621 , G11C11/5635 , G11C16/16 , G11C16/3404 , G11C16/3445 , G11C27/005
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4.发明公开Method for maintaining the memory of non-volatile memory cells 有权伊斯法罕zum Schutz des InhaltsnichtflüchtigerSpeicherzellen
公开(公告)号：EP0987715A1
公开(公告)日：2000-03-22
申请号：EP98830536.3
申请日：1998-09-15
Applicant: STMicroelectronics S.r.l.
Inventor： Pasotti, Marco , Lhermet, Frank , Rolandi, Pier Luigi
CPC classification number: G11C16/3431 , G11C11/5621 , G11C16/3418
Abstract: The method includes restoring the charge lost from memory cells, such as to restore the original voltage levels, within a time equivalent to the retention time. The decision concerning when the memory is to be restored is taken for example when the memory is switched on, based on the time elapsed since the previous programming/restoration, or based on the difference between the present threshold voltage of the reference cells and the original threshold voltage of the (suitably stored) reference cells, or when predetermined operating conditions occur. This makes it possible to prolong the life of nonvolatile memories, in particular of multilevel type, wherein the retention time decreases as the number of levels (bits/cell) is increased.
Abstract translation: 该方法包括在等同于保留时间的时间内恢复从存储器单元丢失的电荷，例如恢复原始电压电平。 基于从上一次编程/恢复之后经过的时间，或者基于参考单元的当前阈值电压与原始值之间的差异，例如当存储器被接通时，采用关于何时恢复存储器的决定 （适当存储的）参考单元的阈值电压，或者当发生预定操作条件时。 这使得可以延长非易失性存储器的使用寿命，特别是延长多级电路的寿命，其中保持时间随着电平数（位/电池）的增加而减少。
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