公开(公告)号：EP2290697A1

公开(公告)日：2011-03-02

申请号：EP10174803.6

申请日：2010-09-01

Applicant: STMicroelectronics S.r.l.

Inventor： Saggio, Mario Giuseppe ,  Murabito, Domenico ,  Magrí, Angelo

IPC: H01L29/78 ,  H01L29/06 ,  H01L21/336 ,  H01L29/10 ,  H01L29/417

CPC classification number: H01L29/0634 ,  H01L27/088 ,  H01L29/0649 ,  H01L29/086 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7811

Abstract: A high voltage semiconductor device comprising a semiconductor substrate (2) covered by an epitaxial layer (3) of a first type of conductivity having a plurality of column structures (4) comprising high aspect ratio deep trenches, said epitaxial layer (3) being covered by an active surface area (5), each of the column structures (4) comprising an external portion (6) formed by a silicon epitaxial layer of a second type of conductivity, and having a dopant charge which counterbalances the dopant charge in said epitaxial layer (3) outside said column structures (4), a dielectric filling portion (7) filling up said deep trench, and said external portion (6) having a dopant concentration with a variable concentration profile having a maximum near an interface with said epitaxial layer (3).

Abstract translation: 一种高电压半导体器件，包括由第一导电类型的外延层（3）覆盖的半导体衬底（2），所述外延层具有包括高纵横比深沟槽的多个列结构（4），所述外延层（3）被覆盖 通过有源表面区域（5），每个列结构（4）包括由第二导电类型的硅外延层形成的外部部分（6），并且具有使所述外延层中的掺杂剂电荷平衡的掺杂剂电荷 在所述列结构（4）外部的层（3），填充所述深沟槽的介电填充部分（7），并且所述外部部分（6）具有可变浓度分布的掺杂浓度，所述掺杂浓度具有与所述外延 层（3）。