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1.发明授权Process for obtaining multilayer metallization of the back of a semiconductor substrate 失效一种用于半导体晶片的背面的多层金属化工艺
公开(公告)号：EP0443296B1
公开(公告)日：1999-08-04
申请号：EP90830062.7
申请日：1990-02-20
Applicant: STMicroelectronics S.r.l.
Inventor： Santangelo, Antonello , Magro, Carmelo , Lanza, Paolo
IPC: H01L21/285
CPC classification number: H01L21/28512
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公开(公告)号：EP0443297B1
公开(公告)日：1999-09-01
申请号：EP90830063.5
申请日：1990-02-20
Applicant: STMicroelectronics S.r.l.
Inventor： Santangelo, Antonello , Magro, Carmelo , Ferla, Giuseppe , Lanza, Paolo
IPC: H01L21/285 , H01L21/60
CPC classification number: H01L29/66166 , H01L21/28518 , H01L21/76879
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