公开(公告)号：EP4187621A1

公开(公告)日：2023-05-31

申请号：EP22206027.9

申请日：2022-11-08

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  PUGLISI, Valeria ,  BELLOCCHI, Gabriele

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/16 ,  H01L21/329 ,  H01L29/40 ,  H01L23/31

Abstract: An electronic device (50; 100) comprising: a semiconductor body (53) of silicon carbide; a first insulating layer (61) on a first surface (53a) of the semiconductor body (53), of a first material with electrical-insulator or dielectric characteristics; a first layer of metal material (58) extending in part on the first surface (53a) of the semiconductor body (53) and in part on the first insulating layer (61); an interface layer (63) on the first layer of metal material (58) and on the first insulating layer (61), of a second material different from the first material; and a passivation layer (69) of said first material on the interface layer (63). The first material is silicon oxide, and the second material is silicon nitride.

公开(公告)号：EP4191663A1

公开(公告)日：2023-06-07

申请号：EP22207266.2

申请日：2022-11-14

Applicant: STMicroelectronics S.r.l.

Inventor： PUGLISI, Valeria ,  BELLOCCHI, Gabriele ,  RASCUNA', Simone

IPC: H01L23/31 ,  H01L21/56 ,  H01L29/16

Abstract: An electronic device (50; 100), comprising: a semiconductor body (53) of silicon carbide; an insulating layer (61; 102) on a surface (53a) of the semiconductor body (53); a layer of metal material (58) extending in part on the surface (53a) of the semiconductor body (53) and in part on the insulating layer (61); a SiN interface layer on the layer of metal material and the insulating layer; a passivation layer (69) on the interface layer; and an anchoring element (82) that protrudes from the passivation layer (69) towards the first insulating layer (61; 102) and extends in the first insulating layer (61; 102) underneath the interface layer.