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1.发明公开Determination of the thickness of a denuded zone in a silicon wafer 失效在einer Siliziumscheibe的Bestimmung der Dicke der Blosszone
公开(公告)号：EP0898298A1
公开(公告)日：1999-02-24
申请号：EP97830354.3
申请日：1997-07-15
Applicant: STMicroelectronics S.r.l.
Inventor： Polignano, Maria Luisa , Brambilla, Marzio , Cazzaniga, Francesco , Pavia, Giuseppe , Zanderigo, Federica
CPC classification number: H01L22/12
Abstract: The depth of a denuded layer in respect to a relatively defective bulk region of a monocrystalline semiconductor wafer is estimated in a nondestructive way by measuring effective diffusion length of injected excess minority charge carriers on a surface of the wafer having such a denuded layer and on a different portion of the surface of the wafer from where the denuded layer has been previously stripped-off by lapping and/or etching and by calculating the depth of the denuded layer through a best-fit procedure or through numerical processing of the measurement results on the basis of the diffusion equations of excess minority carriers.
Abstract translation: 通过测量在具有这种剥离层的晶片的表面上注入的多余少数电荷载体的有效扩散长度，并以非破坏性方式估计裸晶层相对于单晶半导体晶片的相对有缺陷的体区的深度 已经通过研磨和/或蚀刻已经剥离了剥离层的晶片的表面的不同部分，并且通过最佳拟合程序或通过对测量结果进行数值处理来计算裸露层的深度 过剩少数载体扩散方程的基础。
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2.发明授权Characterization of a semiconductor-dielectric interface by photocurrent measurements 有权半导体 - 电介质界面的表征意味着光电流测量
公开(公告)号：EP1024369B1
公开(公告)日：2004-10-20
申请号：EP99830030.5
申请日：1999-01-26
Applicant: STMicroelectronics S.r.l.
Inventor： Polignano, Maria Luisa , Caricato, Anna Paola , Caputo, Daniele
IPC: G01R31/26
CPC classification number: G01R31/2656 , G01R31/2648 , H01L22/14
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3.发明公开Characterization of a semiconductor/dielectric interface by photocurrent measurements 有权Charakterisierung einer Halbleiter-Dielektrikum-Grenzschicht mittels Photostrom-Messungen
公开(公告)号：EP1024369A1
公开(公告)日：2000-08-02
申请号：EP99830030.5
申请日：1999-01-26
Applicant: STMicroelectronics S.r.l.
Inventor： Polignano, Maria Luisa , Caricato, Anna Paola , Caputo, Daniele
IPC: G01R31/26
CPC classification number: G01R31/2656 , G01R31/2648 , H01L22/14
Abstract: In a method for characterizing a semiconductor/substrate/dielectric layer interface through measurements of a photocurrent induced in the semiconductor by scanning a certain area of the interface with a laser beam and collected by way of a Schottky contact established by inversely biasing in respect to the potential of the bulk of the semiconductor substrate an electrolyte capable of etching any native or thermal oxide that may exist on the contact area with the semiconductor substrate, the surface potential of the semiconductor/dielectric interface is controlled by means of a gate electrode established on the dielectric layer by way of a second electrolyte not aggressive of the dielectric material and biased by an electrode immersed in the second electrolyte in respect to the potential of the bulk of the semiconductor substrate.
Abstract translation: 在通过使用激光束扫描界面的特定区域并通过相对于相机的反相建立的肖特基接触进行采集来测量在半导体中感应的光电流来表征半导体/衬底/电介质层界面的方法中 半导体衬底本体的电位是能够蚀刻可能存在于与半导体衬底的接触区域上的任何天然或热氧化物的电解质的电位，半导体/电介质界面的表面电位通过在 电介质层通过不侵蚀介电材料的第二电解质，并相对于半导体衬底本体的电位被浸在第二电解质中的电极偏置。
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公开(公告)号：EP0898298B1
公开(公告)日：2007-09-12
申请号：EP97830354.3
申请日：1997-07-15
Applicant: STMicroelectronics S.r.l.
Inventor： Polignano, Maria Luisa , Brambilla, Marzio , Cazzaniga, Francesco , Pavia, Giuseppe , Zanderigo, Federica
CPC classification number: H01L22/12
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