-
1.发明授权Method of evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memories 失效一种用于评估的非易失性EPROM，EEPROM和快闪EEPROM的存储器中的介电层的方法
公开(公告)号：EP0595775B1
公开(公告)日：1999-07-28
申请号：EP93830134.8
申请日：1993-04-01
Applicant: STMicroelectronics S.r.l.
Inventor： Cappelletti, Paolo Giuseppe , Ravazzi, Leonardo
CPC classification number: G11C29/50004 , G06F2201/81 , G11C16/04 , G11C29/50 , G11C2029/5004 , G11C2029/5006
-
2.发明授权Method of evaluating the gate oxide of non-volatile EPROM, EEPROM and flash-EEPROM memories 失效评估所述栅极氧化物的非易失性EPROM，EEPROM和快闪EEPROM存储器的方法
公开(公告)号：EP0594920B1
公开(公告)日：1999-07-28
申请号：EP92830589.5
申请日：1992-10-29
Applicant: STMicroelectronics S.r.l.
Inventor： Cappelletti, Paolo Giuseppe , Ravazzi, Leonardo
CPC classification number: G11C29/50004 , G06F2201/81 , G11C16/04 , G11C29/50 , G11C2029/5004 , G11C2029/5006
-
3.发明授权Flash EEPROM with integrated device for limiting the erase source voltage 失效闪速EEPROM具有集成布置，以限制所述源电压的缺失
公开(公告)号：EP0758129B1
公开(公告)日：2001-05-23
申请号：EP95830351.3
申请日：1995-08-02
Applicant: STMicroelectronics S.r.l.
Inventor： Fratin, Lorenzo , Ravazzi, Leonardo , Riva, Carlo
-
4.发明授权EPROM and Flash-EEPROM non-volatile memory and method of manufacturing the same 失效非易失性EPROM和闪存EEPROM内存和进程及其制备
公开(公告)号：EP0696050B1
公开(公告)日：1998-10-14
申请号：EP94830363.1
申请日：1994-07-18
Applicant: STMicroelectronics S.r.l.
Inventor： Fratin, Lorenzo , Ravazzi, Leonardo , Riva, Carlo
IPC: H01L21/00 , H01L21/336 , H01L29/10 , H01L29/788
CPC classification number: H01L29/66825 , H01L29/1045 , H01L29/7881
-
-
-
Search Results
4
records
(took 0.022 seconds)
