公开(公告)号：EP0757444B1

公开(公告)日：2004-10-06

申请号：EP95830342.2

申请日：1995-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Ricotti, Giulio ,  Bardelli, Roberto ,  Rossi, Domenico

IPC: H03K17/687 ,  G06K7/08 ,  G06K19/07

CPC classification number: H03K17/6874

公开(公告)号：EP0685921B1

公开(公告)日：1999-12-15

申请号：EP94830272.4

申请日：1994-05-31

Applicant: STMicroelectronics S.r.l.

Inventor： Rossi, Domenico ,  Tahara, Hisashi

IPC: H02M3/07

CPC classification number: H02M3/07

公开(公告)号：EP0587965B1

公开(公告)日：1999-08-04

申请号：EP92830497.1

申请日：1992-09-16

Applicant: STMicroelectronics S.r.l.

Inventor： Onetti, Andrea Mario ,  Rossi, Domenico

IPC: H03F1/02 ,  H03F1/32 ,  H03F3/45

CPC classification number: H03F3/45098 ,  H03F1/0261 ,  H03F1/3211 ,  H03F2203/45492

公开(公告)号：EP0681362B1

公开(公告)日：1998-10-28

申请号：EP94830217.9

申请日：1994-05-06

Applicant: STMicroelectronics S.r.l.

Inventor： Pedrazzini, Giorgio ,  Scrocchi, Giuseppe ,  Cordini, Paolo ,  Rossi, Domenico

IPC: H02M3/156

CPC classification number: H02M3/156 ,  H02M3/1563

公开(公告)号：EP0751622B1

公开(公告)日：2004-09-15

申请号：EP95830277.0

申请日：1995-06-30

Applicant: STMicroelectronics S.r.l.

Inventor： Ricotti, Giulio ,  Bardelli, Roberto ,  Rossi, Domenico

IPC: H03K17/687 ,  G06K19/07

CPC classification number: H03K17/6874 ,  G06K19/0723 ,  H03K17/6872

公开(公告)号：EP0658835B1

公开(公告)日：1999-10-06

申请号：EP93830512.5

申请日：1993-12-17

Applicant: STMicroelectronics S.r.l.

Inventor： Ricotti, Giulio ,  Rossi, Domenico

IPC: G05F3/30

CPC classification number: G05F3/30

公开(公告)号：EP0915508A1

公开(公告)日：1999-05-12

申请号：EP97830507.6

申请日：1997-10-10

Applicant: STMicroelectronics S.r.l.

Inventor： Pozzoni, Massimo ,  Galbiati, Maria Paola ,  Palmieri, Michele ,  Pedrazzini, Giorgio ,  Rossi, Domenico

IPC: H01L21/761

CPC classification number: H01L21/761

Abstract: There is described an integrated circuit with junction insulation on a substrate (10) of semiconductor material comprising active regions (11, 11', 11'') of a first type of conductivity (n), insulation regions (30-33) which separate the junction-forming active regions from one another and from the substrate and means of electrical contact for reverse-biasing the junctions. In order to obtain highly efficient insulation, at least one (11) of the active regions is separated from the active regions adjacent to it (11') and from the substrate (10) by insulation regions (30-33) which form an inner insulation shell, consisting of regions (30, 31) of conductivity of a second type (p), opposite to the first type, which contains the active region (11) and an outer insulation shell, consisting of regions (32, 33) of the first type of conductivity (n) which contains the inner insulation shell.

Abstract translation: 描述了在半导体材料的衬底（10）上具有结绝缘的集成电路，其包括第一类型导电（n）的有源区（11,11'，11“），绝缘区（30-33），其分离 所述接合形成有源区彼此和所述衬底以及用于反向偏置所述接点的电接触装置。 为了获得高效绝缘，通过绝缘区域（30-33）将至少一个有源区域与其邻近的有源区（11'）和基板（10）分离，形成内部 绝缘壳体，包括与第一类型相反的第二类型（p）的导电性的区域（30,31），所述第一类型包含有源区域（11）和外部绝缘壳体，所述外部绝缘壳体由以下区域（32,33）组成： 第一种导电性（n）包含内绝缘壳。