公开(公告)号：EP4113581A1

公开(公告)日：2023-01-04

申请号：EP22181471.8

申请日：2022-06-28

Applicant: STMicroelectronics S.r.l.

Inventor： BADALA', Paolo ,  BASSI, Anna ,  BOSCAGLIA, Massimo ,  SCUDERI, Valentina ,  FRANCO, Giovanni

IPC: H01L21/28 ,  H01L21/268 ,  H01L29/417 ,  H01L21/336 ,  H01L21/329 ,  H01L29/78 ,  H01L29/872 ,  H01L29/16 ,  H01L29/06

Abstract: For the manufacturing of a vertical conduction silicon carbide electronic device, a metal layer (20) is deposited on a wafer (5) that has silicon carbide, wherein the metal layer forms a contact face (22). Laser annealing the contact face (22) with a laser beam (33) causes the metal layer to react with the wafer, forming a silicide layer (50). The laser beam has a footprint (35) having a size (L p,X , L p,Y , W X , W Y ). To laser anneal the contact face, a first portion (47) of the contact face is irradiated, the footprint (35) of the laser beam is moved by a step (D X , D Y ) smaller than the size of the footprint, and a second portion (48, 49) of the contact face is irradiated, thereby causing the first portion and the second portion of the contact face to overlap.

公开(公告)号：EP4160655A1

公开(公告)日：2023-04-05

申请号：EP22198694.6

申请日：2022-09-29

Applicant: STMicroelectronics S.r.l.

Inventor： BADALÀ, Paolo ,  SCUDERI, Valentina ,  BASSI, Anna ,  BOSCAGLIA, Massimo ,  FRANCO, Giovanni

IPC: H01L21/28 ,  H01L21/268 ,  H01L21/304 ,  H01L29/34 ,  H01L29/417 ,  H01L29/872 ,  H01L29/06 ,  H01L29/78 ,  H01L29/16

Abstract: For the manufacturing of a vertical conduction silicon carbide electronic device, a work wafer (5), which has a silicon carbide substrate (12) having a work face (5B), is processed. A rough face (13A) is formed from the work face of the silicon carbide substrate. The rough face has a roughness higher than a threshold. A metal layer (20) is deposited on the rough face and the metal layer is annealed, thereby causing the metal layer to react with the silicon carbide substrate, forming a silicide layer (50) having a plurality of protrusions (53) of silicide.