公开(公告)号：EP3896719A1

公开(公告)日：2021-10-20

申请号：EP21167866.9

申请日：2021-04-12

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna ,  BELLOCCHI, Gabriele

IPC: H01L21/28 ,  H01L29/45 ,  H01L21/268 ,  H01L21/265 ,  H01L21/329 ,  H01L29/872 ,  H01L29/16

Abstract: A method for manufacturing a SiC-based electronic device (50), comprising the steps of: implanting, at a front side (52a) of a solid body (52) of SiC having a conductivity of N type, dopant species of P type, thus forming an implanted region (59') that extends in depth in the solid body starting from the front side (52a) and has a top surface co-planar with said front side (52a); and generating a laser beam (82) directed towards the implanted region (59') in order to generate heating of the implanted region (59') at temperatures comprised between 1500°C and 2600°C so as to form an ohmic contact region (59") including one or more carbon-rich layers, for example graphene and/or graphite layers, in the implanted region (59') and, simultaneously, activation of the dopant species of P type.

公开(公告)号：EP4246553A1

公开(公告)日：2023-09-20

申请号：EP23160409.1

申请日：2023-03-07

Applicant: STMicroelectronics S.r.l.

Inventor： BELLOCCHI, Gabriele ,  RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna

IPC: H01L21/20

Abstract: Process for manufacturing a 3C-SiC layer (4; 24), comprising the steps of: providing a wafer (1; 21) of 4H-SiC, provided with a surface (1a; 21a); heating, through a LASER beam (102), a selective portion of the wafer (1; 21) at least up to a melting temperature of the material of the selective portion; allowing the cooling and crystallization of the melted selective portion, thus forming the 3C-SiC layer (4; 24), a Silicon layer (6a; 26a) on the 3C-SiC layer and a carbon-rich layer (6b; 26b) above the Silicon layer (6a; 26a); completely removing the carbon-rich layer (6; 26) and the Silicon layer (6a; 26a), exposing the 3C-SiC layer (4; 24). If the Silicon layer (6a; 26a) is maintained on the 4H-SiC wafer, the process leads to the formation of a Silicon layer on the 4H-SiC wafer.
The 3C-SiC or Silicon layer thus formed may be used for the integration, even only partial, of electrical or electronic components.

公开(公告)号：EP4113581A1

公开(公告)日：2023-01-04

申请号：EP22181471.8

申请日：2022-06-28

Applicant: STMicroelectronics S.r.l.

Inventor： BADALA', Paolo ,  BASSI, Anna ,  BOSCAGLIA, Massimo ,  SCUDERI, Valentina ,  FRANCO, Giovanni

IPC: H01L21/28 ,  H01L21/268 ,  H01L29/417 ,  H01L21/336 ,  H01L21/329 ,  H01L29/78 ,  H01L29/872 ,  H01L29/16 ,  H01L29/06

Abstract: For the manufacturing of a vertical conduction silicon carbide electronic device, a metal layer (20) is deposited on a wafer (5) that has silicon carbide, wherein the metal layer forms a contact face (22). Laser annealing the contact face (22) with a laser beam (33) causes the metal layer to react with the wafer, forming a silicide layer (50). The laser beam has a footprint (35) having a size (L p,X , L p,Y , W X , W Y ). To laser anneal the contact face, a first portion (47) of the contact face is irradiated, the footprint (35) of the laser beam is moved by a step (D X , D Y ) smaller than the size of the footprint, and a second portion (48, 49) of the contact face is irradiated, thereby causing the first portion and the second portion of the contact face to overlap.

公开(公告)号：EP3937209A1

公开(公告)日：2022-01-12

申请号：EP21183643.2

申请日：2021-07-05

Applicant: STMicroelectronics S.r.l.

Inventor： PILUSO, Nicolò ,  SEVERINO, Andrea ,  RINALDI, Stefania ,  MAZZEO, Angelo Annibale ,  CAUDO, Leonardo ,  RUSSO, Alfio ,  FRANCO, Giovanni ,  BASSI, Anna

IPC: H01L21/306

Abstract: A process for manufacturing a silicon carbide semiconductor device envisages the steps of: providing a silicon carbide wafer (21), having a substrate (22); and carrying out an epitaxial growth for formation of an epitaxial layer (23), having a top surface (23a), on the substrate (22). Following upon the step of carrying out an epitaxial growth, the process envisages the step of removing a surface portion of the epitaxial layer (23) starting from the top surface (23a) so as to remove surface damages present at the top surface (23a) as a result of propagation of dislocations (24) from the substrate (22) during the previous epitaxial growth and so as to define a resulting top surface (23a') substantially free of defects.

公开(公告)号：EP4160655A1

公开(公告)日：2023-04-05

申请号：EP22198694.6

申请日：2022-09-29

Applicant: STMicroelectronics S.r.l.

Inventor： BADALÀ, Paolo ,  SCUDERI, Valentina ,  BASSI, Anna ,  BOSCAGLIA, Massimo ,  FRANCO, Giovanni

IPC: H01L21/28 ,  H01L21/268 ,  H01L21/304 ,  H01L29/34 ,  H01L29/417 ,  H01L29/872 ,  H01L29/06 ,  H01L29/78 ,  H01L29/16

Abstract: For the manufacturing of a vertical conduction silicon carbide electronic device, a work wafer (5), which has a silicon carbide substrate (12) having a work face (5B), is processed. A rough face (13A) is formed from the work face of the silicon carbide substrate. The rough face has a roughness higher than a threshold. A metal layer (20) is deposited on the rough face and the metal layer is annealed, thereby causing the metal layer to react with the silicon carbide substrate, forming a silicide layer (50) having a plurality of protrusions (53) of silicide.

公开(公告)号：EP3876263A1

公开(公告)日：2021-09-08

申请号：EP21161040.7

申请日：2021-03-05

Applicant: STMicroelectronics S.r.l.

Inventor： RASCUNA', Simone ,  BADALA', Paolo ,  BASSI, Anna ,  SAGGIO, Mario Giuseppe ,  FRANCO, Giovanni

IPC: H01L21/04 ,  H01L29/66

Abstract: Method for manufacturing an electronic device (50) based on SiC, comprising the steps of: arranging a substrate (53) of SiC; forming a structural layer (52) of SiC on a front of the substrate; forming, in the structural layer (52), active regions of said electronic device (50), said active regions having a role in the generation and/or conduction of electric current during the use of the electronic device (50); forming, on the structural layer (52), a first electric terminal (58); forming an intermediate layer (72) of Titanium at the back of the substrate; heating the intermediate layer (72) by means of a LASER beam (82) in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds; and forming, on the intermediate layer, a second electric terminal (57) of the electronic device.