METHOD FOR MANUFACTURING A SIC ELECTRONIC DEVICE WITH REDUCED HANDLING STEPS, AND SIC ELECTRONIC DEVICE

    公开(公告)号:EP3876263A1

    公开(公告)日:2021-09-08

    申请号:EP21161040.7

    申请日:2021-03-05

    Abstract: Method for manufacturing an electronic device (50) based on SiC, comprising the steps of: arranging a substrate (53) of SiC; forming a structural layer (52) of SiC on a front of the substrate; forming, in the structural layer (52), active regions of said electronic device (50), said active regions having a role in the generation and/or conduction of electric current during the use of the electronic device (50); forming, on the structural layer (52), a first electric terminal (58); forming an intermediate layer (72) of Titanium at the back of the substrate; heating the intermediate layer (72) by means of a LASER beam (82) in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds; and forming, on the intermediate layer, a second electric terminal (57) of the electronic device.

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