公开(公告)号：EP1178540A1

公开(公告)日：2002-02-06

申请号：EP00830546.8

申请日：2000-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Esseni, David ,  Selmi, Luca ,  Bez, Roberto ,  Modelli, Alberto

IPC: H01L29/788 ,  H01L27/115

CPC classification number: H01L29/66825 ,  G11C16/0416 ,  H01L27/11521 ,  H01L29/7885

Abstract: The memory cell (1) is formed in a body (3) of a P-type semiconductor material forming a channel region (25) and housing N-type drain and source regions (15, 12) at two opposite sides of the channel region (25). A floating gate region (5) extends above the channel region (25). A P-type charge injection region (18) extends in the body (3) contiguously to the drain region (15), at least in part between the channel region (25) and the drain region (15). An N-type base region (21) extends between the drain region (15), the charge injection region (18), and the channel region (25). The charge injection region (18) and the drain region (15) are biased by special contact regions (19, 16) so as to forward bias the PN junction formed by the charge injection region (18) and the base region (21). The holes thus generated in the charge injection region (18) are directly injected through the base region (21) into the body (3), where they generate, by impact, electrons that are injected towards the floating gate region (5).

Abstract translation: 存储单元（1）形成在形成沟道区域（25）的P型半导体材料的主体（3）中，并且在沟道区域的两个相对侧容纳N型漏极和源极区域（15,12） （25）。 浮动栅极区域（5）在沟道区域（25）的上方延伸。 P型电荷注入区域（18）至少部分地在沟道区域（25）和漏极区域（15）之间连续延伸到漏极区域（15）。 N型基极区域（21）在漏极区域（15），电荷注入区域（18）和沟道区域（25）之间延伸。 电荷注入区域（18）和漏极区域（15）被特殊接触区域（19,16）偏置，以便对由电荷注入区域（18）和基极区域（21）形成的PN结进行正向偏压。 这样在电荷注入区域（18）中产生的空穴通过基极区域（21）直接注入到体（3）中，在那里它们通过冲击产生被注入到浮动栅极区域（5）的电子。