公开(公告)号：EP3984944A1

公开(公告)日：2022-04-20

申请号：EP21202712.2

申请日：2021-10-14

Applicant: STMicroelectronics S.r.l.

Inventor： BONI, Nicolò ,  VINCIGUERRA, Lorenzo ,  CARMINATI, Roberto ,  MERLI, Massimiliano

IPC: B81B3/00 ,  G02B26/08

Abstract: The MEMS device (1) is formed by a body (5) of semiconductor material, which defines a support structure (10); by a pass-through cavity (15) in the body, which is surrounded by the support structure; by a movable structure (20) suspended in the pass-through cavity; by an elastic structure (25), which extends in the pass-through cavity between the support structure (10) and the movable structure (20). The elastic structure has a first portion (25A) and a second portion (25B) and is subject, in use, to mechanical stress. The MEMS device is further formed by a metal region (45), which extends on the first portion (25A) of the elastic structure (25), and by a buried cavity (30) in the elastic structure, wherein the buried cavity extends between the first and the second portions of the elastic structure.

公开(公告)号：EP3742506A1

公开(公告)日：2020-11-25

申请号：EP20176147.5

申请日：2020-05-22

Applicant: STMicroelectronics S.r.l.

Inventor： ASSANELLI, Davide ,  MARTINI, Irene ,  VINCIGUERRA, Lorenzo ,  LAZZARI, Carla Maria ,  FERRARINI, Paolo

IPC: H01L41/29 ,  H01L41/23 ,  H01L41/047 ,  H01L41/053 ,  B41J2/14

Abstract: A method for manufacturing a piezoelectric transducer (100) is disclosed, which comprises forming a bottom electrode (34, 40) on a semiconductor body (32), forming a piezoelectric element (36) on the bottom electrode, forming a protective layer (42) having a first opening (44) through which a portion of the piezoelectric element is exposed and a second opening (45) through which a portion of the bottom electrode is exposed, forming a conductive layer on the protective layer and within the first and second openings, and patterning the conductive layer to contextually form a top electrode (48) in electrical contact with the piezoelectric element at the first opening, a first biasing stripe (51) in electrical contact with the top electrode, and a second biasing stripe (52) in electrical contact with the bottom electrode at the second opening. A passivation layer (56) and metal contacts (61, 62) may be formed thereafter.