公开(公告)号：WO2015150257A1

公开(公告)日：2015-10-08

申请号：PCT/EP2015/056719

申请日：2015-03-27

Applicant: STMICROELECTRONICS SA

Inventor： DUTARTRE, Didier ,  JAOUEN, Hervé

IPC: H01L21/02 ,  H01L21/762 ,  H01L21/763 ,  H01L29/04

CPC classification number: H01L21/7624 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/763 ,  H01L29/04

Abstract: Procédé de réalisation d'une plaque de semi-conducteur adaptée pour la fabrication d'un substrat SOI, comprenant les étapes suivantes : - réalisation, sur la face supérieure (2) d'un support semi-conducteur (1), d'une première couche (4) de semi-conducteur polycristallin; puis - formation d'une zone d'interface (12) sur la face supérieure (7) de ladite première couche (4), ladite zone d'interface (12) présentant une structure distincte de la structure cristalline celle de ladite première couche (4); puis - réalisation sur ladite zone d'interface ( 12), d'une deuxième couche ( 14) de semi-conducteur polycristallin.

Abstract translation: 一种适用于制造SOI衬底的半导体晶片的制造方法，包括以下步骤： - 在半导体支撑体（1）的上表面（2）上制造多晶半导体的第一层（4）; 然后在所述第一层（4）的上表面（7）上形成界面区域（12），所述界面区域（12）具有与所述第一层（4）的晶体结构不同的结构。 然后在多晶半导体的第二层（14）的所述界面区域（12）上生产。

公开(公告)号：EP3127142A1

公开(公告)日：2017-02-08

申请号：EP15712173.2

申请日：2015-03-27

Applicant: STMicroelectronics SA

Inventor： DUTARTRE, Didier ,  JAOUEN, Hervé

IPC: H01L21/02 ,  H01L21/762 ,  H01L21/763 ,  H01L29/04

CPC classification number: H01L21/7624 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/763 ,  H01L29/04

Abstract: Method for production of a semiconductor wafer suitable for the manufacture of an SOI substrate, comprising the following steps: - production, on the upper face (2) of a semiconductor support (1), of a first layer (4) of polycrystalline semiconductor; then - formation of an interface area (12) on the upper face (7) of said first layer (4), the interface area (12) having a structure distinct from the crystalline structure of said first layer (4); then - production on said interface area (12) of a second layer (14) of polycrystalline semiconductor.

Abstract translation: 适合于通过提供一种制造SOI基片的半导体晶片：制作在半导体载体的顶侧的多晶半导体的第一层; 然后在第一层的顶侧上的界面区形成，worin界面区域从第一层的晶体结构不同的结构; 然后生产多晶半导体的在界面区的第二层。

公开(公告)号：EP1292976A1

公开(公告)日：2003-03-19

申请号：EP01947572.2

申请日：2001-06-21

Applicant: STMicroelectronics SA

Inventor： LE GOASCOZ, Vincent ,  JAOUEN, Hervé

IPC: H01L21/762 ,  H01L21/265

CPC classification number: H01L21/26533 ,  H01L21/76243

Abstract: The invention concerns a method comprising: 1)a first phase including steps which consist in forming in the upper part of a first initial semiconductor substrate a first layer of insulating material above a sectional plane of said first substrate, contacting the first layer of insulating material with the insulating upper part of a second initial substrate, so as to form a single layer of insulating material, a break at the sectional plane, so as to obtain an intermediate semiconductor substrate on the single insulating material layer; then, 2) in a second phase which consists in forming in the intermediate semiconductor substrate an additional insulating material layer adjacent to the single insulating material and topped with an upper layer of a final semiconductor substrate.