公开(公告)号：EP2796595A4

公开(公告)日：2015-07-29

申请号：EP12859405

申请日：2012-10-31

Applicant: SUMCO CORP

Inventor： SUDO TOSHIAKI ,  SATO TADAHIRO ,  KITAHARA KEN ,  KITAHARA ERIKO ,  KODAMA MAKIKO

IPC: C30B29/06 ,  C03B20/00 ,  G01B11/24

CPC classification number: C30B15/26 ,  C30B15/10 ,  C30B29/06 ,  G01B11/005 ,  G01B11/06 ,  G01B11/24 ,  G01B11/245 ,  G01J3/42 ,  G01J5/58

Abstract: The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner. According to the present invention, A method for evaluating a vitreous silica crucible, including the steps of: moving an internal ranging section along an inner surface of the vitreous silica crucible in a contactless manner; measuring a distance between the internal ranging section and the inner surface as a distance from the inner surface, by subjecting the inner surface of the crucible to irradiation with laser light and then detecting a reflected light from the inner surface, the laser light being emitted from the internal ranging section in an oblique direction with respect to the inner surface, and the measurement being conducted at a plurality of measuring points along a course of a movement of the internal ranging section; and obtaining a three-dimensional shape of the inner surface of the crucible, by associating three-dimensional coordinates of each of the measuring points with the distance from the inner surface, is provided.

公开(公告)号：JP2013139354A

公开(公告)日：2013-07-18

申请号：JP2011290382

申请日：2011-12-29

Applicant: Sumco Corp ,  株式会社Sumco

Inventor： SUDO TOSHIAKI ,  SATO TADAHIRO ,  KITAHARA MASARU ,  KODAMA MAKIKO

IPC: C03B20/00 ,  C30B29/06 ,  G01B11/14

CPC classification number: Y02P40/57

Abstract: PROBLEM TO BE SOLVED: To provide a method for determining silica powder suitable for forming a bubble-free layer in a silica glass crucible for pulling up a silicon single crystal.SOLUTION: This invention relates to a method for determining silica powder suitable for forming a bubble-free layer in a silica glass crucible for pulling up a silicon single crystal, wherein the method includes: a step of measuring gaps among silica particles in the silica powder; a step of melting the silica powder; a step of measuring gaps in a silica block obtained by cooling and hardening the molten silica; and a step of determining whether silica powder is a suitable one or not based on the gaps among the silica particles and the gaps in the silica block.

Abstract translation: 要解决的问题：提供一种用于测定二氧化硅粉末的方法，所述二氧化硅粉末适用于在用于拉出硅单晶的石英玻璃坩埚中形成无气泡层。解决方案本发明涉及一种用于测定二氧化硅粉末的方法， 用于提升硅单晶的石英玻璃坩埚中的无气泡层，其中所述方法包括：测量二氧化硅粉末中二氧化硅颗粒之间的间隙的步骤; 熔化二氧化硅粉末的步骤; 测量通过冷却和固化熔融二氧化硅获得的二氧化硅块中的间隙的步骤; 并且基于二氧化硅颗粒之间的间隙和二氧化硅块中的间隙，确定二氧化硅粉末是否是合适的二氧化硅粉末的步骤。

公开(公告)号：JP2010105880A

公开(公告)日：2010-05-13

申请号：JP2008281169

申请日：2008-10-31

Applicant: Japan Siper Quarts Corp ,  Sumco Corp ,  ジャパンスーパークォーツ株式会社 ,  株式会社Sumco

Inventor： KODAMA MAKIKO ,  MORIKAWA MASAKI

IPC: C30B29/06 ,  C03B20/00 ,  C30B15/10

CPC classification number: C30B15/10 ,  C03B19/095 ,  C30B29/06 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

Abstract: PROBLEM TO BE SOLVED: To provide a quartz silica glass crucible which enables the production (pulling) of silicon single crystals with uniform quality even in the production (pulling) of large sized silicon single crystals, while suppressing local temperature fluctuation of molten silicon. SOLUTION: The quartz silica glass crucible is employed in pulling silicon single crystals and includes at least a transparent layer, semitransparent layer, and opaque layer disposed from the inner surface side to the outer surface side of the crucible. The content of bubbles in the transparent layer is less than 0.3%; the content of bubbles in the semitransparent layer falls within a range of 0.3-0.6%; and the content of bubbles in the opaque layer is greater than 0.6%. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供即使在大尺寸硅单晶的生产（拉制）中也能够均匀质量地生产（拉伸）单晶硅石英石英玻璃坩埚，同时抑制熔融的 硅。 解决方案：石英石英玻璃坩埚用于拉硅单晶，并且至少包括从坩埚的内表面侧到外表面侧设置的透明层，半透明层和不透明层。 透明层中的气泡含量小于0.3％; 半透明层中的气泡含量在0.3〜0.6％的范围内。 并且不透明层中气泡的含量大于0.6％。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010241623A

公开(公告)日：2010-10-28

申请号：JP2009090518

申请日：2009-04-02

Applicant: Japan Siper Quarts Corp ,  Sumco Corp ,  ジャパンスーパークォーツ株式会社 ,  株式会社Sumco

Inventor： KODAMA MAKIKO ,  KISHI HIROSHI ,  KANDA MINORU

IPC: C30B29/06 ,  C03B20/00 ,  C30B15/10

CPC classification number: C30B15/10 ,  C30B29/06 ,  C30B35/002

Abstract: PROBLEM TO BE SOLVED: To provide a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve the production yield of the silicon single crystal by temporal change of an opaque vitreous silica layer.
SOLUTION: The vitreous silica crucible is provided with: the opaque vitreous silica layer 11 which is arranged on the outside surface thereof and contains many bubbles; and a transparent vitreous silica layer 12 which is arranged on the inside surface thereof and does not contain bubbles substantially. The opaque vitreous silica layer 11 has a bubble diameter distribution in which the content of bubbles having 10-30 μm diameter is 10 to

Abstract translation: 要解决的问题：提供一种用于拉伸硅单晶的石英玻璃坩埚，其可以在短时间内熔化硅原料，并且通过不透明玻璃状二氧化硅层的时间变化提高单晶硅的产量 。 解决方案：石英玻璃坩埚设置有：不透明的玻璃状石英层11，其设置在其外表面并且包含许多气泡; 和透明的二氧化硅玻璃层12，其布置在其内表面上并且基本上不含有气泡。 不透明氧化硅玻璃层11具有气泡直径分布，其中直径为10-30μm的气泡的含量为10至<30％，直径为40-90μm的气泡的含量为40至<80％，气泡的气泡直径分布为 ≥90μm直径为10〜<30％。 包含在不透明玻璃状二氧化硅层11中的相对小的气泡在初始拉伸阶段有助于坩埚的导热性，并且通过长期拉伸工艺扩展在不透明玻璃状二氧化硅层中包含的相对大的气泡，并且在很大程度上有助于温暖 在稍后的拉动阶段保持坩埚的性能。 版权所有（C）2011，JPO＆INPIT