QUARTZ GLASS CRUCIBLE AND MANUFACTURING METHOD THEREFOR
    4.
    发明公开
    QUARTZ GLASS CRUCIBLE AND MANUFACTURING METHOD THEREFOR 审中-公开
    QUARZGLASTIEGEL UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号:EP3088572A4

    公开(公告)日:2017-07-26

    申请号:EP14873978

    申请日:2014-12-25

    Applicant: SUMCO CORP

    CPC classification number: C30B15/10 C03B19/095 C30B29/06 C30B35/002 Y02P40/57

    Abstract: Provided is a vitreous silica crucible suppressing deformation under high temperature, and a method for manufacturing the same. A vitreous silica crucible 1 includes a cylindrical straight body portion 10a, a corner portion 10c formed at lower end of the straight body portion 10a, and a bottom portion 10b connected with the straight body portion 10a via the corner portion 10c. Moreover, the vitreous silica crucible 1 includes a bubble-containing opaque layer 11 constituting an outer layer, and a bubble-free transparent layer 12 constituting an inner layer. A boundary surface, between the opaque layer 11 and the transparent layer 12 in at least the straight body portion 10a, forms a periodic wave surface in a vertical direction.

    Abstract translation: 本发明提供抑制高温下变形的氧化硅玻璃坩埚及其制造方法。 氧化硅玻璃坩埚1具有圆筒状的直体部10a,形成于直体部10a的下端的角部10c以及经由角部10c与直体部10a连接的底部10b。 此外,氧化硅玻璃坩埚1具备构成外层的含气泡不透明层11和构成内层的无气泡透明层12。 至少在直体部分10a中的不透明层11和透明层12之间的边界表面在垂直方向上形成周期性波面。

    SILICA GLASS CRUCIBLE
    5.
    发明公开
    SILICA GLASS CRUCIBLE 审中-公开
    SILICIUMGLASTIEGEL

    公开(公告)号:EP3018236A4

    公开(公告)日:2017-06-21

    申请号:EP13888681

    申请日:2013-06-30

    Applicant: SUMCO CORP

    CPC classification number: C30B29/06 C03B19/095 C30B15/10 Y02P40/57

    Abstract: A vitreous silica crucible, comprising a substantially cylindrical straight body portion having an opening on top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is larger than that of the bottom portion, wherein, an inner surface of the crucible has a concavo-convex structure in which a groove-shaped valley is interposed between ridges, and an average interval of the ridges is 5 - 100 µm.

    Abstract translation: 本发明提供一种氧化硅玻璃坩埚,其特征在于,具有:在上端开口且沿上下方向延伸的大致圆筒状的直体部;弯曲的底部;以及连结直体部与底部的角部,其曲率大 其中,所述坩埚的内表面具有凹凸结构,在所述凹凸结构中,在所述凸起之间插入有凹槽状凹部,所述凸部的平均间隔为5〜100μm。

    METHOD FOR EVALUATING SILICA GLASS CRUCIBLE, METHOD FOR PRODUCING SILICON SINGLE CRYSTALS
    7.
    发明公开
    METHOD FOR EVALUATING SILICA GLASS CRUCIBLE, METHOD FOR PRODUCING SILICON SINGLE CRYSTALS 审中-公开
    FOR石英玻璃坩埚的评估和工艺方法用于硅单晶

    公开(公告)号:EP2796595A4

    公开(公告)日:2015-07-29

    申请号:EP12859405

    申请日:2012-10-31

    Applicant: SUMCO CORP

    Abstract: The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner. According to the present invention, A method for evaluating a vitreous silica crucible, including the steps of: moving an internal ranging section along an inner surface of the vitreous silica crucible in a contactless manner; measuring a distance between the internal ranging section and the inner surface as a distance from the inner surface, by subjecting the inner surface of the crucible to irradiation with laser light and then detecting a reflected light from the inner surface, the laser light being emitted from the internal ranging section in an oblique direction with respect to the inner surface, and the measurement being conducted at a plurality of measuring points along a course of a movement of the internal ranging section; and obtaining a three-dimensional shape of the inner surface of the crucible, by associating three-dimensional coordinates of each of the measuring points with the distance from the inner surface, is provided.

    MANUFACTURING METHOD AND MANUFACTURING SYSTEM FOR SILICON SINGLE CRYSTAL

    公开(公告)号:EP3199668A4

    公开(公告)日:2018-05-23

    申请号:EP15844603

    申请日:2015-09-24

    Applicant: SUMCO CORP

    CPC classification number: C30B15/10 C30B15/00 C30B15/20 C30B29/06 C30B35/007

    Abstract: The capacity of respective vitreous silica crucible is grasped precisely to predict the initial liquid surface level of the silicon melt in the vitreous silica crucible. Thereby the dipping process of the seed crystal is reliably performed. Spatial coordinates of multiple points on an inner surface of the vitreous silica crucible prior to filling raw material in the vitreous silica crucible, and a three-dimensional shape of the inner surface of the vitreous silica crucible from a combination of polygons having each measurement point as a vertex coordinate is specified (S11); a predictive value of an initial liquid surface level of the silicon melt in the vitreous silica crucible is preset (S12); a volume of the silicon melt satisfying the predictive value of the initial liquid surface level is obtained based on the three-dimensional shape of the inner surface of the vitreous silica crucible (S13); a weight of the silicon melt having the volume is obtained (S14); raw material having the weight is filled in the vitreous silica crucible (S15); a dipping control of the seed crystal is performed based on the predictive value of the initial liquid surface level (S17).

    QUARTZ GLASS CRUCIBLE AND STRAIN MEASUREMENT DEVICE THEREFOR
    9.
    发明公开
    QUARTZ GLASS CRUCIBLE AND STRAIN MEASUREMENT DEVICE THEREFOR 审中-公开
    QUARZGLASTIEGEL UND DEHNUNGSMESSUNGSVORRICHTUNGDAFÜR

    公开(公告)号:EP3088573A4

    公开(公告)日:2017-09-20

    申请号:EP14874952

    申请日:2014-12-25

    Applicant: SUMCO CORP

    Abstract: A distortion distribution of an entire vitreous silica crucible is measured in a non-destructive way. A distortion-measuring apparatus comprises: a light source 11 which irradiates the vitreous silica crucible 1 from outside; a first polarizer 12 and a first quarter-wave plate 13 disposed between the light source 11 and an outer surface of the vitreous silica crucible 1 wall; a camera 14 disposed inside of the vitreous silica crucible 1; a camera control mechanism 15 configured to control a photographing direction of the camera 14; a second polarizer 16 and a second quarter-wave plate 17 disposed between the camera 14 and an inner surface of the vitreous silica crucible 1's wall. An optical axis of the second quarter-wave plate 17 inclines 90 degrees with respect to the first quarter-wave plate 13. The camera 14 conducts photographing of a light which is emitted from the light source 11 and passes through the first polarizer 12, the first quarter-wave plate 13, the wall of the vitreous silica crucible 1, the second quarter-wave plate 17, and the second polarizer 16.

    Abstract translation: 以非破坏性的方式测量整个氧化硅玻璃坩埚的变形分布。 变形测量装置具备:从外部照射氧化硅玻璃坩埚1的光源11, 第一偏振器12和设置在光源11与氧化硅玻璃坩埚1壁的外表面之间的第一四分之一波片13; 设置在氧化硅玻璃坩埚1内的照相机14; 相机控制机构15,用于控制相机14的拍摄方向; 配置在照相机14与石英玻璃坩埚1的壁的内表面之间的第二偏振片16和第二四分之一波片17。 第二四分之一波片17的光轴相对于第一四分之一波片13倾斜90度。照相机14对从光源11发出并穿过第一偏振片12的光进行拍摄, 第一四分之一波片13,氧化硅玻璃坩埚1的壁,第二四分之一波片17以及第二偏振片16。

    SILICA GLASS CRUCIBLE AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON USING SAME
    10.
    发明公开
    SILICA GLASS CRUCIBLE AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON USING SAME 审中-公开
    石英玻璃坩埚及其制造方法单晶硅SO

    公开(公告)号:EP2799596A4

    公开(公告)日:2015-12-16

    申请号:EP12861496

    申请日:2012-10-31

    Applicant: SUMCO CORP

    CPC classification number: C30B15/10 C30B15/20 C30B29/06 Y10T117/1032

    Abstract: Buckling of a vitreous silica crucible or fall of a sidewall into the crucible is effectively suppressed. Furthermore, dislocations in a silicon single crystal are suppressed to enhance the yield of the single crystal. The vitreous silica crucible is used to pull single-crystal silicon and includes the cylindrical sidewall having an upward-opening rim, a mortar-shaped bottom including a curve, and a round portion connecting the sidewall and the bottom. The round portion is provided in such a manner that the curvature of the inner surface thereof is gradually increased from the sidewall toward the bottom in a section passing through the rotation axis of the vitreous silica crucible.

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