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    SILICON SINGLE CRYSTAL PULLING METHOD
    5.
    发明公开
    SILICON SINGLE CRYSTAL PULLING METHOD 有权
    法生长的硅

    公开(公告)号：EP3015574A4

    公开(公告)日：2017-04-05

    申请号：EP13887931

    申请日：2013-06-29

    Applicant: SUMCO CORP

    Inventor： SUDO TOSHIAKI ,  SATO TADAHIRO ,  KITAHARA KEN ,  KITAHARA ERIKO

    IPC: C30B15/10 ,  C30B29/06

    CPC classification number: C30B15/10 ,  C30B29/06

    Abstract: A pulling-up method of silicon single crystal comprises a process of laying a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is laid between the susceptor's inner surface and the crucible's outer surface.

    MANUFACTURING METHOD AND MANUFACTURING SYSTEM FOR SILICON SINGLE CRYSTAL
    8.
    发明公开
    MANUFACTURING METHOD AND MANUFACTURING SYSTEM FOR SILICON SINGLE CRYSTAL 审中-公开

    公开(公告)号：EP3199668A4

    公开(公告)日：2018-05-23

    申请号：EP15844603

    申请日：2015-09-24

    Applicant: SUMCO CORP

    Inventor： SATO TADAHIRO ,  KITAHARA ERIKO ,  SUDO TOSHIAKI ,  KITAHARA KEN

    IPC: C30B15/00 ,  C30B15/10 ,  C30B15/20 ,  C30B29/06 ,  C30B35/00

    CPC classification number: C30B15/10 ,  C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  C30B35/007

    Abstract: The capacity of respective vitreous silica crucible is grasped precisely to predict the initial liquid surface level of the silicon melt in the vitreous silica crucible. Thereby the dipping process of the seed crystal is reliably performed. Spatial coordinates of multiple points on an inner surface of the vitreous silica crucible prior to filling raw material in the vitreous silica crucible, and a three-dimensional shape of the inner surface of the vitreous silica crucible from a combination of polygons having each measurement point as a vertex coordinate is specified (S11); a predictive value of an initial liquid surface level of the silicon melt in the vitreous silica crucible is preset (S12); a volume of the silicon melt satisfying the predictive value of the initial liquid surface level is obtained based on the three-dimensional shape of the inner surface of the vitreous silica crucible (S13); a weight of the silicon melt having the volume is obtained (S14); raw material having the weight is filled in the vitreous silica crucible (S15); a dipping control of the seed crystal is performed based on the predictive value of the initial liquid surface level (S17).

    QUARTZ GLASS CRUCIBLE AND STRAIN MEASUREMENT DEVICE THEREFOR
    9.
    发明公开
    QUARTZ GLASS CRUCIBLE AND STRAIN MEASUREMENT DEVICE THEREFOR 审中-公开
    QUARZGLASTIEGEL UND DEHNUNGSMESSUNGSVORRICHTUNGDAFÜR

    公开(公告)号：EP3088573A4

    公开(公告)日：2017-09-20

    申请号：EP14874952

    申请日：2014-12-25

    Applicant: SUMCO CORP

    Inventor： SUDO TOSHIAKI ,  SATO TADAHIRO ,  KITAHARA KEN ,  KITAHARA ERIKO

    IPC: C30B29/06 ,  C03B20/00 ,  C03C3/04 ,  C30B15/10 ,  G01L1/24 ,  G01L5/00 ,  G01N21/23 ,  H04N5/232

    CPC classification number: G01N21/23 ,  C03C3/04 ,  C30B15/10 ,  C30B29/06 ,  G01L1/24 ,  G01L5/0047 ,  G01N2201/062 ,  G01N2201/0683 ,  H04N5/232

    Abstract: A distortion distribution of an entire vitreous silica crucible is measured in a non-destructive way. A distortion-measuring apparatus comprises: a light source 11 which irradiates the vitreous silica crucible 1 from outside; a first polarizer 12 and a first quarter-wave plate 13 disposed between the light source 11 and an outer surface of the vitreous silica crucible 1 wall; a camera 14 disposed inside of the vitreous silica crucible 1; a camera control mechanism 15 configured to control a photographing direction of the camera 14; a second polarizer 16 and a second quarter-wave plate 17 disposed between the camera 14 and an inner surface of the vitreous silica crucible 1's wall. An optical axis of the second quarter-wave plate 17 inclines 90 degrees with respect to the first quarter-wave plate 13. The camera 14 conducts photographing of a light which is emitted from the light source 11 and passes through the first polarizer 12, the first quarter-wave plate 13, the wall of the vitreous silica crucible 1, the second quarter-wave plate 17, and the second polarizer 16.

    Abstract translation: 以非破坏性的方式测量整个氧化硅玻璃坩埚的变形分布。 变形测量装置具备：从外部照射氧化硅玻璃坩埚1的光源11， 第一偏振器12和设置在光源11与氧化硅玻璃坩埚1壁的外表面之间的第一四分之一波片13; 设置在氧化硅玻璃坩埚1内的照相机14; 相机控制机构15，用于控制相机14的拍摄方向; 配置在照相机14与石英玻璃坩埚1的壁的内表面之间的第二偏振片16和第二四分之一波片17。 第二四分之一波片17的光轴相对于第一四分之一波片13倾斜90度。照相机14对从光源11发出并穿过第一偏振片12的光进行拍摄， 第一四分之一波片13，氧化硅玻璃坩埚1的壁，第二四分之一波片17以及第二偏振片16。

    SILICA GLASS CRUCIBLE AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON USING SAME
    10.
    发明公开
    SILICA GLASS CRUCIBLE AND METHOD FOR PRODUCING MONOCRYSTALLINE SILICON USING SAME 审中-公开
    石英玻璃坩埚及其制造方法单晶硅SO

    公开(公告)号：EP2799596A4

    公开(公告)日：2015-12-16

    申请号：EP12861496

    申请日：2012-10-31

    Applicant: SUMCO CORP

    Inventor： SUDO TOSHIAKI ,  SATO TADAHIRO ,  KITAHARA ERIKO ,  FUJITA TAKESHI

    IPC: C30B29/06 ,  C03B20/00 ,  C30B15/10

    CPC classification number: C30B15/10 ,  C30B15/20 ,  C30B29/06 ,  Y10T117/1032

    Abstract: Buckling of a vitreous silica crucible or fall of a sidewall into the crucible is effectively suppressed. Furthermore, dislocations in a silicon single crystal are suppressed to enhance the yield of the single crystal. The vitreous silica crucible is used to pull single-crystal silicon and includes the cylindrical sidewall having an upward-opening rim, a mortar-shaped bottom including a curve, and a round portion connecting the sidewall and the bottom. The round portion is provided in such a manner that the curvature of the inner surface thereof is gradually increased from the sidewall toward the bottom in a section passing through the rotation axis of the vitreous silica crucible.

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