公开(公告)号：US20230299238A1

公开(公告)日：2023-09-21

申请号：US18122513

申请日：2023-03-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh B. Jain ,  Mohamed Lachab ,  Joseph Dion ,  Brandon Alexander Robinson ,  Devendra Diwan ,  Mark Geppert

IPC: H01L33/32 ,  H01L33/22 ,  H01L33/12

CPC classification number: H01L33/325 ,  H01L33/22 ,  H01L33/12

Abstract: A solution for fabricating a semiconductor structure and the corresponding semiconductor structure are provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.

公开(公告)号：US20240421245A1

公开(公告)日：2024-12-19

申请号：US18821093

申请日：2024-08-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Joseph Dion ,  Devendra Diwan ,  Brandon Alexander Robinson ,  Rakesh B. Jain

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32

Abstract: An optoelectronic device with reduced optical losses is disclosed. The optoelectronic device includes a set of n-type layers; an active region that includes at least one quantum well configured to generate radiation at a peak emitted wavelength and at least one barrier; and a set of p-type layers disposed on the active region. A reflective layer can be disposed on the set of p-type layers. The set of p-type layers can included an electron blocking region, and a thickness of the electron blocking region can be 80% or less than a thicking of the set of p-type layers. Additionally, a thickness of the at least one barrier can be 20% or less than the thickness of the set of p-type layers.