公开(公告)号：US20230299238A1

公开(公告)日：2023-09-21

申请号：US18122513

申请日：2023-03-16

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh B. Jain ,  Mohamed Lachab ,  Joseph Dion ,  Brandon Alexander Robinson ,  Devendra Diwan ,  Mark Geppert

IPC: H01L33/32 ,  H01L33/22 ,  H01L33/12

CPC classification number: H01L33/325 ,  H01L33/22 ,  H01L33/12

Abstract: A solution for fabricating a semiconductor structure and the corresponding semiconductor structure are provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.