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公开(公告)号：US20190019917A1
公开(公告)日：2019-01-17
申请号：US16021374
申请日：2018-06-28
Applicant: Sensor Electronic Technology, Inc.
Inventor： Rakesh Jain , Wenhong Sun , Jinwei Yang , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska , Michael Shur , Brandon Robinson
Abstract: A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.
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