公开(公告)号：FI20215203A1

公开(公告)日：2022-05-13

申请号：FI20215203

申请日：2021-02-23

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： LEHTINEN JANNE ,  MYKKÄNEN EMMA ,  KEMPPINEN ANTTI ,  RONZANI ALBERTO ,  PRUNNILA MIKA

IPC: H01L39/04 ,  H01L35/00 ,  H05K9/00

Abstract: A device (100) for shielding at least one component from thermal radiation, the device comprising at least a first substrate (102) with a first surface (104) and a second surface (106) and a second substrate (108) with a first surface (110) and second surface (112), the first surface of the second substrate being arranged to at least partially face the second surface of the first substrate. The device additionally comprises at least a first component (114) arranged on the first surface of the second substrate or the second surface of the first substrate and a shielding arrangement comprising a plurality of shielding elements (116, 118, 120) comprising electrically conductive material, the shielding elements being configured to essentially surround at least the first component to provide a shielded area within which the first component is located, wherein electromagnetic radiation having wavelength longer than a selected first wavelength is essentially prevented from reaching the shielded area.

公开(公告)号：ES2582328T3

公开(公告)日：2016-09-12

申请号：ES12786090

申请日：2012-05-11

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PRUNNILA MIKA ,  JAAKKOLA ANTTI ,  PENSALA TUOMAS

IPC: H03H9/02 ,  B81B3/00 ,  H03H9/24

Abstract: Un dispositivo micromecánico que comprende - un elemento semiconductor que puede desviarse o resonar y que comprende al menos dos regiones que tienen diferentes propiedades de material, y - medios de impulso o detección acoplados funcionalmente a dicho elemento semiconductor, - al menos una de dichas regiones comprende uno o más agentes de dopaje tipo-n, - en volúmenes relativos, concentraciones de dopaje, agentes de dopaje y/u orientaciones de cristal de las regiones se configuran de modo que - las sensibilidades a temperatura de la rigidez generalizada son de signo opuesto al menos a una temperatura para las regiones, y - la deriva de temperatura total de la rigidez generalizada del elemento semiconductor es 50 ppm o menos en un intervalo de temperaturas de 100 °C, caracterizado por que la al menos una primera región y al menos una segunda región son regiones distintas que comprenden diferentes concentraciones de dopaje del uno o más agentes de dopaje tipo-n.

公开(公告)号：FI123933B

公开(公告)日：2013-12-31

申请号：FI20115465

申请日：2011-05-13

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PRUNNILA MIKA ,  JAAKKOLA ANTTI ,  PENSALA TUOMAS

IPC: H03H9/02 ,  B81B3/00 ,  H03H9/24

公开(公告)号：FI20115465A0

公开(公告)日：2011-05-13

申请号：FI20115465

申请日：2011-05-13

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PRUNNILA MIKA ,  JAAKKOLA ANTTI ,  PENSALA TUOMAS

IPC: H01L20060101

Abstract: The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.

公开(公告)号：FI20155151A

公开(公告)日：2016-09-10

申请号：FI20155151

申请日：2015-03-09

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： VARPULA AAPO ,  PRUNNILA MIKA ,  GRIGORAS KESTUTIS

IPC: G01J3/26 ,  G01B9/02 ,  G01J3/45 ,  G02B5/08 ,  G02B26/00

公开(公告)号：FI20115151A

公开(公告)日：2012-08-18

申请号：FI20115151

申请日：2011-02-17

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PENSALA TUOMAS ,  JAAKKOLA ANTTI ,  GANCHENKOVA MARIA ,  PRUNNILA MIKA ,  KIIHAMAEKI JYRKI

IPC: H03H9/02 ,  B81B3/00 ,  H03H3/007

公开(公告)号：FI20115151A0

公开(公告)日：2011-02-17

申请号：FI20115151

申请日：2011-02-17

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PENSALA TUOMAS ,  JAAKKOLA ANTTI ,  GANCHENKOVA MARIA ,  PRUNNILA MIKA ,  KIIHAMAEKI JYRKI

IPC: H01L20060101

Abstract: The invention concerns a micromechanical device and method of manufacturing thereof. The device comprises an oscillating or deflecting element made of semiconductor material comprising n-type doping agent and excitation or sensing means functionally connected to said oscillating or deflecting element. According to the invention, the oscillating or deflecting element is essentially homogeneously doped with said n-type doping agent. The invention allows for designing a variety of practical resonators having a low temperature drift.

公开(公告)号：FI20215201A1

公开(公告)日：2022-08-24

申请号：FI20215201

申请日：2021-02-23

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： PRUNNILA MIKA ,  KEMPPINEN ANTTI ,  LEHTINEN JANNE ,  RONZANI ALBERTO ,  MYKKÄNEN EMMA

IPC: H01L23/373 ,  F25B21/00 ,  F25D19/00 ,  H01L23/367 ,  H01L39/22

Abstract: An inventive embodiment comprises a thermalization arrangement at cryogenic temperatures. The arrangement comprises a dielectric substrate (2) layer on which substrate a device/s or component/s (1) are positionable. A heat sink component (4) is attached on another side of the substrate. The arrangement further comprises a conductive layer (5) between the substrate layer (2) and the heat sink component (4). A joint between the substrate layer (2) and the conductive layer (5) has minimal thermal boundary resistance. Another joint between the conductive layer (5) and the cooling heat sink layer (4) is electrically conductive.

公开(公告)号：FI129589B

公开(公告)日：2022-05-13

申请号：FI20215203

申请日：2021-02-23

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： KEMPPINEN ANTTI ,  LEHTINEN JANNE ,  PRUNNILA MIKA ,  MYKKÄNEN EMMA ,  RONZANI ALBERTO

IPC: H01L39/04 ,  H01L35/00 ,  H05K9/00

Abstract: A device (100) for shielding at least one component from thermal radiation, the device comprising at least a first substrate (102) with a first surface (104) and a second surface (106) and a second substrate (108) with a first surface (110) and second surface (112), the first surface of the second substrate being arranged to at least partially face the second surface of the first substrate. The device additionally comprises at least a first component (114) arranged on the first surface of the second substrate or the second surface of the first substrate and a shielding arrangement comprising a plurality of shielding elements (116, 118, 120) comprising electrically conductive material, the shielding elements being configured to essentially surround at least the first component to provide a shielded area within which the first component is located, wherein electromagnetic radiation having wavelength longer than a selected first wavelength is essentially prevented from reaching the shielded area.

公开(公告)号：FI20195772A1

公开(公告)日：2021-03-17

申请号：FI20195772

申请日：2019-09-16

Applicant: TEKNOLOGIAN TUTKIMUSKESKUS VTT OY

Inventor： TAPPURA KIRSI ,  KESTUTIS GRIGORAS ,  PRUNNILA MIKA ,  VARPULA AAPO ,  TIIRA JONNA

IPC: G01J5/02 ,  H01L27/144 ,  H01L35/32 ,  H01L35/34

Abstract: According to an example aspect of the present invention, there is provided a detector comprising an optically absorbing membrane (111) suspended over a cavity between the membrane (111) and a substrate (140), the substrate (140) comprised in the detector, and a thermoelectric transducer (120, 130) attaching the optically absorbing membrane (111) over the cavity, wherein the optically absorbing membrane (111) forms a contacting element between n-type and p-type thermoelectric elements (120, 130) of the thermoelectric transducer (120, 130).