公开(公告)号：JPH03282394A

公开(公告)日：1991-12-12

申请号：JP32874890

申请日：1990-11-27

Applicant: TENCOR INSTRUMENTS

Inventor： UIRIAMU AARU UIIRAA ,  AAMAN PII NIYUUKAAMANZU ,  GURAHAMU JIEI SHIDAARU

IPC: G12B5/00

Abstract: PURPOSE: To position a transducer(TD) accurately with respect to a substrate through a simple and stabilized structure using an X-Y-Z motion stage which can be engaged with a carrier including a substrate. CONSTITUTION: In order to inspect a substrate 35, the substrate 35 is roughly positioned with respect to a transducer(TD) 31 on an X-Y stage 19 and then a vacuum chuck 25 mounting the substrate 35 is lifted to an upper basic level plane 15 by means of a Z stage 21 while leaving a slight gap on a pad 37. After a TD 31 is offset by a reticle or the like, the TD 31 is positioned immediately above a measuring region by corrective displacement according to a program. A chuck 25 is then evacuated through the pad 27 and sucked to the surface 16 to the level plane 15. The chuck 25 is held through a vacuum line 39 and the stage 21 is lowered slightly. Consequently, the structural loop between the TD 31 and the substrate 35 is shortened while reinforcing the structure and since they move in harmony, effect of vibration can be reduced. This structure increases stability between the substrate 35 and the TD 31 thus reducing relative fluctuation.

公开(公告)号：JPH04305951A

公开(公告)日：1992-10-28

申请号：JP12767791

申请日：1991-05-30

Applicant: TENCOR INSTRUMENTS

Inventor： AAMAN PII NIYUUKAAMANZU ,  PIITAA SHII JIYAN ,  RARUFU UORUFU ,  DEIBITSUDO UORUZE ,  SUTANREE SUTOKOBUSUKI

IPC: H01L21/66 ,  G01N21/94 ,  H01L21/027

Abstract: PURPOSE: To provide a method and an apparatus for determining the number of contaminant material particles in a patterned circuit region on a semiconductor wafer. CONSTITUTION: A diffraction grating pattern is formed in same mode simultaneously with formation of a reflection circuit pattern on a wafer 10. The wafer is scanned by means of a laser beam 23 and since a diffraction pattern to be generated by a grating pattern is known, it can be detected when and which grating pattern is being scanned by the light beam. Scattering light from a non-grating region is separated spatially from the diffracted light from the grating and only the light scattered from a particle or a defect existing in the grating region is collected and detected by a photodetector 44. Number of particles in the grating region is calculated from a detected scattering light and the number of particles in the circuit pattern region is estimated by extrapolation. Alternatively, a stripped region may be inspected precisely.

公开(公告)号：JPH04278446A

公开(公告)日：1992-10-05

申请号：JP3761591

申请日：1991-03-04

Applicant: TENCOR INSTRUMENTS

Inventor： SUTANREE SUTOKOBUSUKI ,  DEIBITSUDO UORUZE ,  AAMAN PII NIYUUKAAMANZU

IPC: G01N23/22 ,  G01N21/00 ,  G01N27/00

Abstract: PURPOSE: To give compensation for capacitive current and photovoltaic current effect in a method using a change in photoelectron discharging current from a spot irradiating a surface to determine the presence and thickness or other spatial range of contaminants in each of a plurality of at least two positions on the surface of a electrically conductive material such as semiconductor, metal or metal silicide. CONSTITUTION: A system 31 comprises a light beam 36 and light source 35 focused lenses 37, 37 for illuminating an irradiation place 39 on the surface of a conductive material 33 and earth layer 33 material. Photoelectrons discharged from the material 33 are collected to a first collected 41 to provided a first output signal 47 and further current due to a capacitive effect received by a second electron collector 49 provides a second output signal 53. A difference between two output signals is formed by a difference module 55 to provide output signal on 57.

公开(公告)号：JPH04211144A

公开(公告)日：1992-08-03

申请号：JP511591

申请日：1991-01-21

Applicant: TENCOR INSTRUMENTS

Inventor： AAMAN PII NIYUUKAAMANZU ,  JIYOZEFU BAAGAA

IPC: H01J37/28 ,  G01B7/34 ,  G01N37/00 ,  G01Q60/00 ,  G01Q70/06 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16 ,  H01L21/266 ,  H01L21/306 ,  H01L21/66

Abstract: PURPOSE: To obtain a fine top end obtained as a cantilever having a controllable high aspect rate by providing a thin film of a semiconductor material in one conductive type so as to be brought into contact with a further thick layer of a semiconductor material in a second opposite conductive type. CONSTITUTION: A system 11 includes a sheet 13 of a semiconductor material, and this includes an upper sheet 15 in a first conductive type (for example, an (n) type) and a second lower layer 17 in a second conductive type (for example, a (p) type) opposite to the first conductive type. A high energy ion thin beam extracted from an element in the first conductive type is directed through the first layer to the second layer, and a long and thin ion profile with a high aspect rate of the second material except the ion profile in the first conductive type is obtained by etching away the second layer, leaving the first layer as a cantilever space, and leaving the material of the ion profile so as to be projected from this base. Thus, a fine top end can be formed.