公开(公告)号：JPH04211144A

公开(公告)日：1992-08-03

申请号：JP511591

申请日：1991-01-21

Applicant: TENCOR INSTRUMENTS

Inventor： AAMAN PII NIYUUKAAMANZU ,  JIYOZEFU BAAGAA

IPC: H01J37/28 ,  G01B7/34 ,  G01N37/00 ,  G01Q60/00 ,  G01Q70/06 ,  G01Q70/10 ,  G01Q70/14 ,  G01Q70/16 ,  H01L21/266 ,  H01L21/306 ,  H01L21/66

Abstract: PURPOSE: To obtain a fine top end obtained as a cantilever having a controllable high aspect rate by providing a thin film of a semiconductor material in one conductive type so as to be brought into contact with a further thick layer of a semiconductor material in a second opposite conductive type. CONSTITUTION: A system 11 includes a sheet 13 of a semiconductor material, and this includes an upper sheet 15 in a first conductive type (for example, an (n) type) and a second lower layer 17 in a second conductive type (for example, a (p) type) opposite to the first conductive type. A high energy ion thin beam extracted from an element in the first conductive type is directed through the first layer to the second layer, and a long and thin ion profile with a high aspect rate of the second material except the ion profile in the first conductive type is obtained by etching away the second layer, leaving the first layer as a cantilever space, and leaving the material of the ion profile so as to be projected from this base. Thus, a fine top end can be formed.