公开(公告)号：GB2253051B

公开(公告)日：1994-10-19

申请号：GB9103563

申请日：1991-02-20

Applicant: TENCOR INSTRUMENTS

Inventor： STOKOWSKI STANLEY ,  WOLZE DAVID ,  NEUKERMANS ARMAND P

IPC: G01B11/06 ,  G01N23/227 ,  G01B15/02

Abstract: Methods for determining the presence or absence of, and the thickness or other spacial extent of, a contaminant layer at each of a plurality of two or more sites on the surface of an electrically conductive material such as a semiconductor, a metal or a metal silicide. The invention uses a change in photoemission current from an illuminated spot on the surface to determine the presence and extent of a contaminant layer at the illuminated site. Compensation is provided for the effects of capacitive current and photovoltaic current. The invention provides a pattern of illumination sites on the conductor surface that can, if desired, cover all points on the surface.

公开(公告)号：DE4106841A1

公开(公告)日：1992-09-10

申请号：DE4106841

申请日：1991-03-04

Applicant: TENCOR INSTRUMENTS

Inventor： STOKOWSKI STANLEY ,  WOLZE DAVID ,  NEUKERMANS ARMAND P

IPC: G01B11/06 ,  G01N23/227

Abstract: Methods for determining the presence or absence of, and the thickness or other spacial extent of, a contaminant layer at each of a plurality of two or more sites on the surface of an electrically conductive material such as a semiconductor, a metal or a metal silicide. The invention uses a change in photoemission current from an illuminated spot on the surface to determine the presence and extent of a contaminant layer at the illuminated site. Compensation is provided for the effects of capacitive current and photovoltaic current. The invention provides a pattern of illumination sites on the conductor surface that can, if desired, cover all points on the surface.

公开(公告)号：GB2253051A

公开(公告)日：1992-08-26

申请号：GB9103563

申请日：1991-02-20

Applicant: TENCOR INSTRUMENTS

Inventor： STOKOWSKI STANLEY ,  WOLZE DAVID ,  NEUKERMANS ARMAND P

IPC: G01B11/06 ,  G01N23/227

Abstract: For determining the presence, and measuring the thickness of a contaminant layer on the surface of an electrically conductive material (33) such as a semiconductor, a metal or a metal silicide, a change in photoemission current from an illuminated spot on the surface is used to determine the presence and extent of a contaminant layer at the illuminated site (39). Compensation is provided for the effects of capacitive current and photovoltaic current. A pattern of illumination sites (39) on the surface of the conductor (33) can cover all points on the surface.