公开(公告)号：BR112013001774A2

公开(公告)日：2016-05-31

申请号：BR112013001774

申请日：2010-10-15

Applicant: TESSERA INC

Inventor： HABA BELGACEM ,  MITCHELL CRAIG ,  MOHAMMED ILYAS ,  SAVALIA PIYUSH ,  OGANESIAN VAGE

IPC: H05K5/00

Abstract: unidade de microeletrônica, conjunto microeletrônico, métodos de fabricação de uma unidade de microeletrônica e de fabricação de um conjunto empilhado de unidades microeletrônicas, e, sistema. é divulgada uma unidade de microeletrônica que inclui uma estrutura de suporte com uma superfície frontal, uma superfície traseira remota em relação à superfície frontal, e um rebaixo com uma abertura na superfície frontal e uma superfície interna localizada abaixo da superfície frontal da estrutura de suporte. a unidade de microeletrônica pode incluir um elemento microeletrônico com uma superfície de base adjacente à superfície interna, uma superfície de topo remota em relação à superfície de base e uma pluralidade de contatos na superfície de topo. o elemento microeletrônico pode incluir terminais eletricamente conectados nos contatos do elemento microeletrônico. a unidade de microeletrônico pode incluir uma região dielétrica que contata pelo menos a superfície de topo do elemento microeletrônico. a região dielétrica pdoe ter uma superfície plana localizadacoplanar em relação à superfície frontal da estrutura de suporte, ou acima dela. os terminais podem ficar expostos na superfície da região dielétrica para interconexão com um elemento externo.

公开(公告)号：WO2012037216A3

公开(公告)日：2012-06-07

申请号：PCT/US2011051552

申请日：2011-09-14

Applicant: TESSERA INC ,  OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

IPC: H01L21/768 ,  H01L23/48 ,  H01L25/065

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/50 ,  H01L24/03 ,  H01L24/05 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2924/01322 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor assembly 10 can include providing a semiconductor element 20 having a front surface 21, a rear surface 22, and a plurality of conductive pads 50, forming at least one hole 40 extending at least through a respective one of the conductive pads 50 by processing applied to the respective conductive pad 50 from above the front surface 21, forming an opening 30 extending from the rear surface 22 at least partially through a thickness of the semiconductor element 20, such that the at least one hole 30 and the opening 40 meet at a location between the front and rear surfaces, and forming at least one conductive element 60, 80 exposed at the rear surface 22 for electrical connection to an external device, the at least one conductive element extending within the at least one hole 30 and at least into the opening 40, the conductive element being electrically connected with the respective conductive pad 50.

Abstract translation: 制造半导体组件10的方法可以包括提供具有前表面21，后表面22和多个导电焊盘50的半导体元件20，形成至少一个孔40，所述至少一个孔40至少延伸穿过相应的一个导电 通过处理从前表面21上方施加到相应的导电焊盘50的焊盘50形成从后表面22至少部分地延伸穿过半导体元件20的厚度的开口30，使得至少一个孔30和 开口40在前表面和后表面之间的位置汇合，并且形成暴露在后表面22处用于电连接到外部装置的至少一个导电元件60,80，所述至少一个导电元件在至少一个孔 并且至少进入开口40中，导电元件与相应的导电垫50电连接。

公开(公告)号：EP2596689A4

公开(公告)日：2017-07-26

申请号：EP10855121

申请日：2010-10-15

Applicant: TESSERA INC

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MITCHELL CRAIG ,  MOHAMMED ILYAS ,  SAVALIA PIYUSH

IPC: H01L21/60 ,  H01L21/98 ,  H01L23/13 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/10

CPC classification number: H01L21/76819 ,  H01L21/76877 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/4985 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L24/97 ,  H01L25/105 ,  H01L25/117 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/24227 ,  H01L2224/24247 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1029 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01061 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15165 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/18161 ,  Y10T29/49002 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/82 ,  H01L2224/83

Abstract: A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure.

Abstract translation: 微电子单元包括具有前表面，远离前表面的后表面和在前表面处具有开口的凹槽以及位于载体结构的前表面下方的内表面的载体结构。 微电子单元可以包括具有与内表面相邻的底表面，远离底表面的顶表面和在顶表面处的多个触点的微电子元件。 微电子元件可以包括与微电子元件的触点电连接的端子。 微电子单元可以包括至少接触微电子元件的顶表面的介电区域。 电介质区域可以具有与载体结构的前表面共平面或在其上方的平面表面。 端子可以暴露在介电区域的表面处以与外部元件互连。

公开(公告)号：EP2596520A4

公开(公告)日：2017-07-05

申请号：EP10855116

申请日：2010-10-13

Applicant: TESSERA INC

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06166 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/81801 ,  H01L2224/8182 ,  H01L2224/8185 ,  H01L2224/94 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/81

公开(公告)号：WO2007064779A8

公开(公告)日：2008-06-26

申请号：PCT/US2006045817

申请日：2006-11-30

Applicant: TESSERA INC ,  MOHAMMED ILYAS ,  HABA BELGACEM

Inventor： MOHAMMED ILYAS ,  HABA BELGACEM

IPC: H01L25/10

CPC classification number: H01L25/0657 ,  H01L21/563 ,  H01L23/3157 ,  H01L24/48 ,  H01L24/49 ,  H01L25/105 ,  H01L2224/05599 ,  H01L2224/06135 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/484 ,  H01L2224/49 ,  H01L2224/73215 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2224/45099 ,  H01L2924/00011

Abstract: A microelectronic assembly including a first and second microelectronic elements. (12, 14) Each of the microelectronic elements (12, 14) have oppositely-facing first (14, 22) and second surfaces (18, 24) and edges bounding the surfaces. The first microelectronic element (12) is disposed on the second microelectronic element (14) with the second surface (18) of the first microelectronic element (14) facing toward the first surface (22) of the second microelectronic element (14). The first microelectronic element (12) preferably extends beyond at least one edge of the second microelectronic element (14) and the second microelectronic element (14) preferably extends beyond at least one edge of the first microelectronic element (12).

Abstract translation: 一种包括第一和第二微电子元件的微电子组件。 （12,14）每个微电子元件（12,14）具有相对面对的第一（14,22）和第二表面（18,24）以及边界限定的边缘。 第一微电子元件（12）设置在第二微电子元件（14）上，第一微电子元件（14）的第二表面（18）面向第二微电子元件（14）的第一表面（22）。 第一微电子元件（12）优选地延伸超过第二微电子元件（14）的至少一个边缘，并且第二微电子元件（14）优选地延伸超出第一微电子元件（12）的至少一个边缘。

公开(公告)号：WO2013019541A4

公开(公告)日：2013-05-30

申请号：PCT/US2012048288

申请日：2012-07-26

Applicant: TESSERA INC ,  MOHAMMED ILYAS ,  HABA BELGACEM ,  UZOH CYPRIAN

Inventor： MOHAMMED ILYAS ,  HABA BELGACEM ,  UZOH CYPRIAN

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/5329 ,  H01L2224/10135 ,  H01L2924/07811 ,  H01L2924/00

Abstract: A component 10 can include a substrate 20 having a front surface 22 and a rear surface 21 remote therefrom, an opening 30 extending from the rear surface towards the front surface, and a conductive via 40 extending within the opening. The substrate 20 can have a CTE less than 10 ppm/°C. The opening 30 can define an inner surface 31 between the front and rear surfaces 22, 21. The conductive via 40 can include a first metal layer 41 overlying the inner surface 31 and a second metal region 42 overlying the first metal layer and electrically coupled to the first metal layer. The second metal region 42 can have a CTE greater than a CTE of the first metal layer 41. The conductive via 40 can have an effective CTE across a diameter D of the conductive via that is less than 80% of the CTE of the second metal region 42.

Abstract translation: 部件10可以包括具有前表面22和远离其的后表面21的基板20，从后表面朝向前表面延伸的开口30以及在开口内延伸的导电通孔40。 基板20可以具有小于10ppm /℃的CTE。 开口30可以在前表面22和后表面21之间限定内表面31.导电通孔40可以包括覆盖在内表面31上的第一金属层41和覆盖第一金属层的第二金属区域42，并且电耦合到 第一个金属层。 第二金属区域42可以具有大于第一金属层41的CTE的CTE。导电通孔40可以具有穿过导电通孔的直径D的有效CTE，其小于第二金属的CTE的80％ 区域42。

公开(公告)号：WO2013019541A3

公开(公告)日：2013-04-18

申请号：PCT/US2012048288

申请日：2012-07-26

Applicant: TESSERA INC ,  MOHAMMED ILYAS ,  HABA BELGACEM ,  UZOH CYPRIAN

Inventor： MOHAMMED ILYAS ,  HABA BELGACEM ,  UZOH CYPRIAN

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/5329 ,  H01L2224/10135 ,  H01L2924/07811 ,  H01L2924/00

Abstract: A component 10 can include a substrate 20 having a front surface 22 and a rear surface 21 remote therefrom, an opening 30 extending from the rear surface towards the front surface, and a conductive via 40 extending within the opening. The substrate 20 can have a CTE less than 10 ppm/°C. The opening 30 can define an inner surface 31 between the front and rear surfaces 22, 21. The conductive via 40 can include a first metal layer 41 overlying the inner surface 31 and a second metal region 42 overlying the first metal layer and electrically coupled to the first metal layer. The second metal region 42 can have a CTE greater than a CTE of the first metal layer 41. The conductive via 40 can have an effective CTE across a diameter D of the conductive via that is less than 80% of the CTE of the second metal region 42.

Abstract translation: 部件10可以包括具有远离其的前表面22和后表面21的基板20，从后表面向前表面延伸的开口30以及在开口内延伸的导电通孔40。 衬底20可具有小于10ppm /℃的CTE。 开口30可以在前表面22和后表面21之间限定内表面31.导电通孔40可以包括覆盖内表面31的第一金属层41和覆盖第一金属层的第二金属区域42， 第一金属层。 第二金属区域42可以具有大于第一金属层41的CTE的CTE。导电通孔40可以在导电通孔的直径D上具有小于第二金属的CTE的80％的有效CTE 区域42。

公开(公告)号：WO2012061199A3

公开(公告)日：2012-06-28

申请号：PCT/US2011058080

申请日：2011-10-27

Applicant: TESSERA INC ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  CHAU ELLIS ,  LEE SANG II ,  DESAI KISHOR

Inventor： HABA BELGACEM ,  MOHAMMED ILYAS ,  CHAU ELLIS ,  LEE SANG II ,  DESAI KISHOR

IPC: H01L21/56

CPC classification number: H01L23/49811 ,  H01L21/563 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/131 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/1601 ,  H01L2224/1605 ,  H01L2224/16225 ,  H01L2224/1703 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8349 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A method for making a microelectronic assembly includes providing a microelectronic element 30 with first conductive elements and a dielectric element 50 with second conductive elements. At least some of either the first conductive elements or the second conductive elements may be conductive posts 40 and other of the first or second conductive elements may include a bond metal 10 disposed between some of the conductive posts 40. An underfill layer 60 may overly some of the first or second conductive elements. At least one of the first conductive elements may be moved towards the other of the second conductive elements so that the posts pierce the underfill layer 60 and at least deform the bond metal 10. The microelectronic element 30 and the dielectric element 50 can be heated to join them together. The height of the posts 40 above the surface may be at least forty percent of a distance between surfaces of the microelectronic element 30 and dielectric element 50.

Abstract translation: 制造微电子组件的方法包括：将微电子元件30提供有第一导电元件和具有第二导电元件的电介质元件50。 第一导电元件或第二导电元件中的至少一些可以是导电柱40，并且第一或第二导电元件中的另一个可以包括设置在一些导电柱40之间的接合金属10.底部填充层60可能过度一些 的第一或第二导电元件。 第一导电元件中的至少一个可以朝向第二导电元件中的另一个移动，使得支柱刺穿底部填充层60并且至少使接合金属10变形。微电子元件30和电介质元件50可被加热到 一起加入 表面上方的柱40的高度可以是微电子元件30和电介质元件50的表面之间的距离的至少40％。

公开(公告)号：WO2008021575A3

公开(公告)日：2008-07-10

申请号：PCT/US2007018521

申请日：2007-08-16

Applicant: TESSERA INC ,  MOHAMMED ILYAS ,  HABA BELGACEM ,  MORAN SEAN ,  WANG WEI-SHUN ,  CHAU ELLIS ,  WADE CHRISTOPHER

Inventor： MOHAMMED ILYAS ,  HABA BELGACEM ,  MORAN SEAN ,  WANG WEI-SHUN ,  CHAU ELLIS ,  WADE CHRISTOPHER

IPC: H01L25/065 ,  H01L23/31 ,  H01L25/10

CPC classification number: H01L25/105 ,  H01L23/3121 ,  H01L23/3157 ,  H01L23/49811 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/06135 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/49 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/00011

Abstract: A microelectronic package includes a lower unit 11 OA having a lower unit substrate with conductive features and a top and bottom surface 64, 66. The lower unit IIOA includes., one or more lower unit chips 112A, 132A overlying the top surface 64 of the' lower unit substrate 62 that are electrically connected to the conductive features 68, 70 of the lower unit substrate 62. The microelectronic package also includes an upper unit 110 including an upper unit substrate having conductive features, top and bottom surfaces and a hole extending between such top and bottom surfaces. The upper unit further includes one or more upper unit chips 112, 132 overlying the top surface of the upper unit substrate and electrically connected to the conductive features of the upper unit substrate by connections extending within the hole 76.

Abstract translation: 微电子封装包括具有导电特征的下部单元基板和顶部和底部表面64,66的下部单元110A。下部单元IIOA包括一个或多个下部单元芯片112A，132A，其位于 下部单元基板62电连接到下部单元基板62的导电特征68,70。微电子封装还包括上部单元110，上部单元110包括具有导电特征的上部单元基板，顶部和底部表面以及在 这样的顶面和底面。 上部单元还包括一个或多个上部单元芯片112,132，其覆盖在上部单元基板的顶表面上，并且通过在孔76内延伸的连接与上部单元基板的导电特征电连接。

公开(公告)号：WO2012074570A3

公开(公告)日：2012-09-27

申请号：PCT/US2011029394

申请日：2011-03-22

Applicant: TESSERA INC ,  OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/498

CPC classification number: H01L23/481 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/145 ,  H01L23/147 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13009 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/83 ,  H01L2224/9202 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A microelectronic assembly 100 is provided which includes a first element 110 consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface 103 facing and attached to a major surface 104 of a microelectronic element 102 at which a plurality of conductive pads 106 are exposed, the microelectronic element 102 having active semiconductor devices therein. A first opening 111 extends from an exposed surface 118 of the first element 110 towards the surface 103 attached to the microelectronic element 102, and a second opening 113 extends from the first opening 111 to a first one of the conductive pads 106, wherein where the first and second openings meet, interior surfaces 121, 123 of the first and second openings extend at different angles relative to the major surface 104 of the microelectronic element 102. A conductive element 114 extends within the first and second openings 111, 113 and contacts the at least one conductive pad 106.

Abstract translation: 提供微电子组件100，其包括第一元件110，第一元件110基本上由至少一种半导体或无机介电材料组成，该第一元件110具有面对并连接到微电子元件102的主表面104的表面103，在微电子元件102的主表面104处，多个导电垫106 其中微电子元件102具有有源半导体器件。 第一开口111从第一元件110的暴露表面118朝向附接到微电子元件102的表面103延伸，并且第二开口113从第一开口111延伸到导电垫106中的第一个，其中， 第一和第二开口相遇，第一和第二开口的内表面121,123相对于微电子元件102的主表面104以不同的角度延伸。导电元件114在第一和第二开口111,113内延伸并接触 至少一个导电垫106。