公开(公告)号：BR112013001774A2

公开(公告)日：2016-05-31

申请号：BR112013001774

申请日：2010-10-15

Applicant: TESSERA INC

Inventor： HABA BELGACEM ,  MITCHELL CRAIG ,  MOHAMMED ILYAS ,  SAVALIA PIYUSH ,  OGANESIAN VAGE

IPC: H05K5/00

Abstract: unidade de microeletrônica, conjunto microeletrônico, métodos de fabricação de uma unidade de microeletrônica e de fabricação de um conjunto empilhado de unidades microeletrônicas, e, sistema. é divulgada uma unidade de microeletrônica que inclui uma estrutura de suporte com uma superfície frontal, uma superfície traseira remota em relação à superfície frontal, e um rebaixo com uma abertura na superfície frontal e uma superfície interna localizada abaixo da superfície frontal da estrutura de suporte. a unidade de microeletrônica pode incluir um elemento microeletrônico com uma superfície de base adjacente à superfície interna, uma superfície de topo remota em relação à superfície de base e uma pluralidade de contatos na superfície de topo. o elemento microeletrônico pode incluir terminais eletricamente conectados nos contatos do elemento microeletrônico. a unidade de microeletrônico pode incluir uma região dielétrica que contata pelo menos a superfície de topo do elemento microeletrônico. a região dielétrica pdoe ter uma superfície plana localizadacoplanar em relação à superfície frontal da estrutura de suporte, ou acima dela. os terminais podem ficar expostos na superfície da região dielétrica para interconexão com um elemento externo.

公开(公告)号：WO2012037216A3

公开(公告)日：2012-06-07

申请号：PCT/US2011051552

申请日：2011-09-14

Applicant: TESSERA INC ,  OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

IPC: H01L21/768 ,  H01L23/48 ,  H01L25/065

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/50 ,  H01L24/03 ,  H01L24/05 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2924/01322 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A method of fabricating a semiconductor assembly 10 can include providing a semiconductor element 20 having a front surface 21, a rear surface 22, and a plurality of conductive pads 50, forming at least one hole 40 extending at least through a respective one of the conductive pads 50 by processing applied to the respective conductive pad 50 from above the front surface 21, forming an opening 30 extending from the rear surface 22 at least partially through a thickness of the semiconductor element 20, such that the at least one hole 30 and the opening 40 meet at a location between the front and rear surfaces, and forming at least one conductive element 60, 80 exposed at the rear surface 22 for electrical connection to an external device, the at least one conductive element extending within the at least one hole 30 and at least into the opening 40, the conductive element being electrically connected with the respective conductive pad 50.

Abstract translation: 制造半导体组件10的方法可以包括提供具有前表面21，后表面22和多个导电焊盘50的半导体元件20，形成至少一个孔40，所述至少一个孔40至少延伸穿过相应的一个导电 通过处理从前表面21上方施加到相应的导电焊盘50的焊盘50形成从后表面22至少部分地延伸穿过半导体元件20的厚度的开口30，使得至少一个孔30和 开口40在前表面和后表面之间的位置汇合，并且形成暴露在后表面22处用于电连接到外部装置的至少一个导电元件60,80，所述至少一个导电元件在至少一个孔 并且至少进入开口40中，导电元件与相应的导电垫50电连接。

公开(公告)号：WO2012074570A3

公开(公告)日：2012-09-27

申请号：PCT/US2011029394

申请日：2011-03-22

Applicant: TESSERA INC ,  OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/498

CPC classification number: H01L23/481 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76877 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/145 ,  H01L23/147 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/89 ,  H01L24/92 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13009 ,  H01L2224/13099 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/83 ,  H01L2224/9202 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A microelectronic assembly 100 is provided which includes a first element 110 consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface 103 facing and attached to a major surface 104 of a microelectronic element 102 at which a plurality of conductive pads 106 are exposed, the microelectronic element 102 having active semiconductor devices therein. A first opening 111 extends from an exposed surface 118 of the first element 110 towards the surface 103 attached to the microelectronic element 102, and a second opening 113 extends from the first opening 111 to a first one of the conductive pads 106, wherein where the first and second openings meet, interior surfaces 121, 123 of the first and second openings extend at different angles relative to the major surface 104 of the microelectronic element 102. A conductive element 114 extends within the first and second openings 111, 113 and contacts the at least one conductive pad 106.

Abstract translation: 提供微电子组件100，其包括第一元件110，第一元件110基本上由至少一种半导体或无机介电材料组成，该第一元件110具有面对并连接到微电子元件102的主表面104的表面103，在微电子元件102的主表面104处，多个导电垫106 其中微电子元件102具有有源半导体器件。 第一开口111从第一元件110的暴露表面118朝向附接到微电子元件102的表面103延伸，并且第二开口113从第一开口111延伸到导电垫106中的第一个，其中， 第一和第二开口相遇，第一和第二开口的内表面121,123相对于微电子元件102的主表面104以不同的角度延伸。导电元件114在第一和第二开口111,113内延伸并接触 至少一个导电垫106。

公开(公告)号：EP2596689A4

公开(公告)日：2017-07-26

申请号：EP10855121

申请日：2010-10-15

Applicant: TESSERA INC

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MITCHELL CRAIG ,  MOHAMMED ILYAS ,  SAVALIA PIYUSH

IPC: H01L21/60 ,  H01L21/98 ,  H01L23/13 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L25/10

CPC classification number: H01L21/76819 ,  H01L21/76877 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/4985 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L24/97 ,  H01L25/105 ,  H01L25/117 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/24227 ,  H01L2224/24247 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1029 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01061 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15156 ,  H01L2924/15165 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/18161 ,  Y10T29/49002 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/82 ,  H01L2224/83

Abstract: A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure.

Abstract translation: 微电子单元包括具有前表面，远离前表面的后表面和在前表面处具有开口的凹槽以及位于载体结构的前表面下方的内表面的载体结构。 微电子单元可以包括具有与内表面相邻的底表面，远离底表面的顶表面和在顶表面处的多个触点的微电子元件。 微电子元件可以包括与微电子元件的触点电连接的端子。 微电子单元可以包括至少接触微电子元件的顶表面的介电区域。 电介质区域可以具有与载体结构的前表面共平面或在其上方的平面表面。 端子可以暴露在介电区域的表面处以与外部元件互连。

公开(公告)号：EP2596520A4

公开(公告)日：2017-07-05

申请号：EP10855116

申请日：2010-10-13

Applicant: TESSERA INC

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  MITCHELL CRAIG ,  SAVALIA PIYUSH

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/02377 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/06166 ,  H01L2224/06181 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/81801 ,  H01L2224/8182 ,  H01L2224/8185 ,  H01L2224/94 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/81

公开(公告)号：WO2012082881A3

公开(公告)日：2012-08-23

申请号：PCT/US2011064884

申请日：2011-12-14

Applicant: TESSERA INC ,  OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  SAVALIA PIYUSH ,  MITCHELL CRAIG

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED ILYAS ,  SAVALIA PIYUSH ,  MITCHELL CRAIG

IPC: H01L21/98 ,  B81C1/00 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/13 ,  H01L25/065 ,  H01L29/06

CPC classification number: H01L23/562 ,  B81C1/00269 ,  B81C1/00357 ,  H01L21/2007 ,  H01L21/561 ,  H01L21/563 ,  H01L21/568 ,  H01L23/13 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L29/0657 ,  H01L2224/29186 ,  H01L2224/2919 ,  H01L2224/32057 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/83051 ,  H01L2224/83191 ,  H01L2224/83345 ,  H01L2224/83385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/1027 ,  H01L2924/1032 ,  H01L2924/1037 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/3511 ,  H01L2224/83 ,  H01L2924/00

Abstract: A method of bonding first and second microelectronic elements includes pressing together a first substrate 100 containing active circuit elements 108 therein with a second substrate 112, with a flowable dielectric material 102 between confronting surfaces of the respective substrates, each of the first and second substrates 100,112 having a coefficient of thermal expansion less than 10 parts per million/ °C, at least one of the confronting surfaces having a plurality of channels 118A-118F extending from an edge of such surface, such that the dielectric material 102 between planes defined by the confronting surfaces is at least substantially free of voids and has a thickness over one micron, and at least some of the dielectric material 102 flows into at least some of the channels.

Abstract translation: 结合第一微电子元件和第二微电子元件的方法包括将包含有源电路元件108的第一基板100与第二基板112一起压在一起，在相应基板的相对表面之间具有可流动电介质材料102，第一基板100和第二基板120中的每一个 具有小于10ppm /℃的热膨胀系数，面对表面中的至少一个具有从该表面的边缘延伸的多个通道118A-118F，使得介电材料102在由 面对的表面至少基本上没有空隙并且具有超过一微米的厚度，并且至少一些电介质材料102流入至少一些通道中。

公开(公告)号：WO2012078709A2

公开(公告)日：2012-06-14

申请号：PCT/US2011063653

申请日：2011-12-07

Applicant: TESSERA INC ,  OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED LLYAS ,  SAVALIA PIYUSH ,  MITCHELL CRAIG

Inventor： OGANESIAN VAGE ,  HABA BELGACEM ,  MOHAMMED LLYAS ,  SAVALIA PIYUSH ,  MITCHELL CRAIG

IPC: H01L25/065 ,  H01L21/60 ,  H01L21/98 ,  H01L27/06

CPC classification number: H01L21/76898 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/80 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02123 ,  H01L2224/0215 ,  H01L2224/0311 ,  H01L2224/0332 ,  H01L2224/03466 ,  H01L2224/03602 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05013 ,  H01L2224/05014 ,  H01L2224/05015 ,  H01L2224/05022 ,  H01L2224/05073 ,  H01L2224/05186 ,  H01L2224/05191 ,  H01L2224/05548 ,  H01L2224/05551 ,  H01L2224/05552 ,  H01L2224/05555 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/06181 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15165 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/81805 ,  H01L2924/06

Abstract: A microelectronic unit 12 includes a substrate 20 and an electrically conductive element 40. The substrate 20 can have a CTE less than 10 ppm/°C, a major surface 21 having a recess 30 not extending through the substrate, and a material 50 having a modulus of elasticity less than 10 GPa disposed within the recess. The electrically conductive element 40 can include a joining portion 42 overlying the recess 30 and extending from an anchor portion 41 supported by the substrate 20. The joining portion 42 can be at least partially exposed at the major surface 21 for connection to a component 14 external to the microelectronic unit 12.

Abstract translation: 微电子单元12包括基板20和导电元件40.基板20可以具有小于10ppm /℃的CTE，具有未延伸穿过基板的凹部30的主表面21和具有 设置在凹槽内的弹性模量小于10GPa。 导电元件40可以包括覆盖凹部30并且从由基板20支撑的锚定部分41延伸的连接部分42.接合部分42可以在主表面21处至少部分地暴露以连接到外部部件14 到微电子单元12。