公开(公告)号：EP0078452A3

公开(公告)日：1985-01-09

申请号：EP82109686

申请日：1982-10-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yuan, Han-Tzong ,  McLevige, William V. ,  Duncan, Walter M. ,  Doerbeck, Friedrich H.

IPC: H01L27/02 ,  H01L29/20 ,  H03K19/091

CPC classification number: H01L27/024 ,  H01L21/7605 ,  H01L27/0233 ,  H01L29/7327

Abstract: integrated circuits are fabricated on a substrate 11 of gallium arsenide using a substrate emitter device structure. The use of gallium arsenide improves the speed of this family of bipolar integrated circuits, because the electron mobility of GaAs is greater than that of comparably doped silicon. Device isolation is accomplished by implant damage, increasing the circuit density. The substrate emitter bipolar implementation provides high noise immunity and simple layout, while power consumption is at a low level.

公开(公告)号：EP0588327B1

公开(公告)日：1996-07-31

申请号：EP93114866.2

申请日：1993-09-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cho, Chih-Chen ,  Duncan, Walter M.

IPC: H01S3/06 ,  H01S3/16 ,  H01L33/00

CPC classification number: H01S3/0627 ,  H01S3/0604 ,  H01S3/0635 ,  H01S3/16 ,  H01S3/1611 ,  H01S3/165 ,  H01S5/026 ,  H01S5/041 ,  H01S5/183 ,  H01S5/3227

公开(公告)号：EP0721101A2

公开(公告)日：1996-07-10

申请号：EP96100210.2

申请日：1996-01-09

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Duncan, Walter M. ,  Files, Leigh Ann

IPC: G01N21/17

CPC classification number: G01Q30/02 ,  G01N21/17 ,  G01Q60/24

Abstract: Photothermal effects of a material (10) may be detected and analyzed in order to identify and characterize the material (10). The material (10) is illuminated by a light (32) from a light source (34). The material (10) absorbs the light (32), causing an increase in temperature and size of the material (10). An atomic force probe tip (30) detects the increase in temperature and size of the material (10) in order to determine characteristic properties of the material (10). The characteristic properties of the material (10) are used in identifying the nature of the material (10).

Abstract translation: 可以检测和分析材料（10）的光热效应，以便识别和表征材料（10）。 材料（10）由来自光源（34）的光（32）照射。 材料（10）吸收光（32），导致材料（10）的温度和尺寸的增加。 原子力探针尖端（30）检测材料（10）的温度和尺寸的增加，以便确定材料（10）的特性。 材料（10）的特性用于识别材料（10）的性质。

公开(公告)号：EP0078452A2

公开(公告)日：1983-05-11

申请号：EP82109686.4

申请日：1982-10-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yuan, Han-Tzong ,  McLevige, William V. ,  Duncan, Walter M. ,  Doerbeck, Friedrich H.

IPC: H01L27/02 ,  H01L29/20 ,  H03K19/091

CPC classification number: H01L27/024 ,  H01L21/7605 ,  H01L27/0233 ,  H01L29/7327

Abstract: integrated circuits are fabricated on a substrate 11 of gallium arsenide using a substrate emitter device structure. The use of gallium arsenide improves the speed of this family of bipolar integrated circuits, because the electron mobility of GaAs is greater than that of comparably doped silicon. Device isolation is accomplished by implant damage, increasing the circuit density. The substrate emitter bipolar implementation provides high noise immunity and simple layout, while power consumption is at a low level.

Abstract translation: 使用衬底发射极器件结构在砷化镓的衬底11上制造集成电路。 砷化镓的使用提高了双极集成电路系列的速度，因为GaAs的电子迁移率大于比较掺杂的硅的电子迁移率。 器件隔离通过植入物损伤实现，增加电路密度。 衬底发射极双极实现提供高抗噪声性和简单的布局，而功耗处于低水平。

公开(公告)号：EP0721101A3

公开(公告)日：1997-02-26

申请号：EP96100210.2

申请日：1996-01-09

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Douglas, Monte A. ,  Duncan, Walter M. ,  Files, Leigh Ann

IPC: G01N21/17

CPC classification number: G01Q30/02 ,  G01N21/17 ,  G01Q60/24

Abstract: Photothermal effects of a material (10) may be detected and analyzed in order to identify and characterize the material (10). The material (10) is illuminated by a light (32) from a light source (34). The material (10) absorbs the light (32), causing an increase in temperature and size of the material (10). An atomic force probe tip (30) detects the increase in temperature and size of the material (10) in order to determine characteristic properties of the material (10). The characteristic properties of the material (10) are used in identifying the nature of the material (10).

公开(公告)号：EP0588327A1

公开(公告)日：1994-03-23

申请号：EP93114866.2

申请日：1993-09-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cho, Chih-Chen ,  Duncan, Walter M.

IPC: H01S3/06 ,  H01S3/16 ,  H01L33/00

CPC classification number: H01S3/0627 ,  H01S3/0604 ,  H01S3/0635 ,  H01S3/16 ,  H01S3/1611 ,  H01S3/165 ,  H01S5/026 ,  H01S5/041 ,  H01S5/183 ,  H01S5/3227

Abstract: A silicon-based microlaser formed of rare-earth-doped CaF₂ thin films has a semiconductor substrate material (2.40) and a CaF₂ film layers (234) grown on semiconductor substrate material (240). The CaF₂ film layer (234) is doped with a predetermined amount of rare-earth-dopant that is sufficient to cause a spectral emission from the CaF₂ film layer (234) having a narrow linewidth when the CaF₂ film layer (234) is optically or electrically pumped.

Abstract translation: 由稀土掺杂的CaF 2薄膜形成的硅基微激光器具有在半导体衬底材料（240）上生长的半导体衬底材料（2.40）和CaF 2膜层（234）。 当CaF 2膜层（234）在光学上时，CaF 2膜层（234）掺杂有预定量的稀土掺杂剂，其足以引起具有窄线宽的CaF 2膜层（234）的光谱发射 电泵。