A METHOD AND APPARATUS FOR TESTING A MEMORY CIRCUIT WITH PARALLEL BLOCK WRITE OPERATION
    4.
    发明申请
    A METHOD AND APPARATUS FOR TESTING A MEMORY CIRCUIT WITH PARALLEL BLOCK WRITE OPERATION 审中-公开
    用于测试具有并行块写操作的存储器电路的方法和装置

    公开(公告)号:WO1995030227A1

    公开(公告)日:1995-11-09

    申请号:PCT/GB1995000978

    申请日:1995-04-28

    CPC classification number: G11C29/28

    Abstract: An integrated circuit memory device (21) includes plural input/output pins (30, 127 and others) and plural arrays of addressable storage cells (31-46). A set of circuits (51, 68, 70, 71-86, 90) provides access to a unique storage location in each array (31-46) through a given row and column address. A writing circuit (47, 68, 70, 71-86, 91-106, 131-146), designed for test, provides in parallel plural copies of a test data bit. The test data bit is applied through a single pin (30) and a common data-in lead (68), for storage in an addressed storage cell in each of the arrays. A readout circuit (110, 111, 112, 171, 127, 201-216, 131-146) is arranged for reading out the stored test data bit from the addressed storage cell in each of the arrays (31-46). The writing circuit, while in a block write test mode, stores the test data bit on the common data-in lead (68) in a block of address locations in each array (31-46).

    Abstract translation: 集成电路存储器件(21)包括多个输入/输出引脚(30,127等)和多个可寻址存储单元阵列(31-46)。 一组电路(51,68,70,71-86,90)通过给定的行和列地址提供对每个阵列(31-46)中唯一存储位置的访问。 设计用于测试的写入电路(47,68,70,71-86,91-106,131-146)并行提供测试数据位的多个副本。 测试数据位通过单个引脚(30)和公共数据输入引线(68)施加,用于存储在每个阵列中的寻址存储单元中。 读出电路(110,111,112,171,127,201-216,131-146)用于从每个阵列(31-46)中的所寻址的存储单元读出存储的测试数据位。 写入电路在块写入测试模式下,将测试数据位存储在每个阵列(31-46)中的地址位置块中的公共数据引入线(68)中。

    DIGITAL SIGNAL PROCESSOR ARCHITECTURE
    5.
    发明申请
    DIGITAL SIGNAL PROCESSOR ARCHITECTURE 审中-公开
    数字信号处理器架构

    公开(公告)号:WO1994001816A1

    公开(公告)日:1994-01-20

    申请号:PCT/GB1993001469

    申请日:1993-07-13

    CPC classification number: G06F15/7842

    Abstract: Processor architecture comprising a central processing unit CPU (2, 4), a program memory (1) and a data memory (3), the central processing unit being functionally composed of a program execution portion (1, 2) and a data processing portion (4), characterised in that, in order to reduce the number of components participating in the constitution of the processor, at least one element (6, 11, 12) of the program execution portion (1, 2) is disposed in the data processing portion (4).

    Abstract translation: 处理器架构包括中央处理单元CPU(2,4),程序存储器(1)和数据存储器(3),所述中央处理单元在功能上由程序执行部分(1,2)和数据处理部分 (4),其特征在于,为了减少参与处理器结构的部件的数量,程序执行部分(1,2)的至少一个元件(6,11,12)被布置在数据中 处理部(4)。

    A POWER SEMICONDUCTOR DEVICE
    6.
    发明申请
    A POWER SEMICONDUCTOR DEVICE 审中-公开
    功率半导体器件

    公开(公告)号:WO1996004685A1

    公开(公告)日:1996-02-15

    申请号:PCT/GB1995001857

    申请日:1995-08-04

    Abstract: A semiconductor device having two or more p-n junctions, being in particular a bipolar transistor or a thyristor. The device has a gold ion implant (14) in a region of the device between two of or the two p-n junctions, which region is the base (2) in the case of a bipolar transistor, located away from the current carrying active region of the device. The device has a low resistance and may be turned off rapidly because the implanted gold provides recombination centres which act as a sink for carriers drawing them from the active region.

    Abstract translation: 具有两个或更多个p-n结的半导体器件,特别是双极晶体管或晶闸管。 器件在两个或两个pn结之间的器件的区域中具有金离子注入(14),在双极晶体管的情况下,该区域是基极(2),位于远离载流有源区 装置。 该器件具有低电阻并且可能被快速关闭,因为注入的金提供复合中心,其用作用于从活性区域吸取它们的载体的汇点。

    IMPROVEMENTS IN OR RELATING TO FIELD MEMORIES
    7.
    发明申请
    IMPROVEMENTS IN OR RELATING TO FIELD MEMORIES 审中-公开
    对现场记忆的改善或相关

    公开(公告)号:WO1995016266A1

    公开(公告)日:1995-06-15

    申请号:PCT/EP1994004071

    申请日:1994-12-07

    CPC classification number: G11C7/1039

    Abstract: A field memory having a distributed architecture is disclosed and in particular a memory arranged in block, wherein each block stores a bit or bits of said word, said bits having a predetermined position within said word. The distributed architecture improves the transfer of data between the input/output buffers and the internal registers of the memory. A data cache and an improved input erasable realisation are also disclosed.

    Abstract translation: 公开了具有分布式架构的场存储器,特别是以块为单位布置的存储器,其中每个块存储所述字的位或位,所述位在所述字内具有预定位置。 分布式架构改善了输入/输出缓冲器和存储器的内部寄存器之间的数据传输。 还公开了数据高速缓存和改进的输入可擦除实现。

    DATA-PROCESSING SYSTEM WITH A DEVICE FOR HANDLING PROGRAM LOOPS
    8.
    发明申请
    DATA-PROCESSING SYSTEM WITH A DEVICE FOR HANDLING PROGRAM LOOPS 审中-公开
    具有用于处理程序的设备的数据处理系统

    公开(公告)号:WO1994002894A2

    公开(公告)日:1994-02-03

    申请号:PCT/GB1993001470

    申请日:1993-07-13

    Abstract: The invention concerns a data-processing system of the microprocessor type, with two pipeline levels comprising a device of executing an instruction sequence in a repetitive manner, comprising a program counter (74), and a program-address-start register (76) to record the number of the first instruction of the instruction sequence and a repeat counter (70) initialized at the time the first instruction of the instruction sequence is executed. The next-to-last instruction of the instruction sequence to be repeated contains an end-of-loop (EOL) code, which, when the last instruction of the loop is executed, directs that the contents of the program-address-start register (76) be loaded into the program counter (74) as long as the repeat counter is not at zero. The end-of-loop (EOL) code permits an important reduction in the circuits used and an increase in the speed of handling loops.

    Abstract translation: 本发明涉及一种微处理器类型的数据处理系统,其中两个流水线级包括以重复方式执行指令序列的装置,包括程序计数器(74)和程序地址开始寄存器(76), 记录指令序列的第一指令的编号,以及执行指令序列的第一指令时初始化的重复计数器(70)。 要重复的指令序列的最后一条指令包含循环结束(EOL)代码,当执行循环的最后一条指令时,指示程序地址开始寄存器的内容 (76)只要重复计数器不为零就被加载到程序计数器(74)中。 循环(EOL)代码允许重要的减少所使用的电路和提高处理循环的速度。

    GASEOUS PROCESS AND APPARATUS FOR REMOVING FILMS FROM SUBSTRATES
    9.
    发明申请
    GASEOUS PROCESS AND APPARATUS FOR REMOVING FILMS FROM SUBSTRATES 审中-公开
    用于从基板上移除膜的气体处理和装置

    公开(公告)号:WO1987001508A1

    公开(公告)日:1987-03-12

    申请号:PCT/US1986001714

    申请日:1986-08-25

    CPC classification number: H01L21/31116

    Abstract: A process of removing at least a portion of a film from a substrate, such as a wafer of silicon or other similar materials, the film on the substrate typically being an oxide film, maintaining the atmosphere embracing the substrate at near room temperature and at near normal atmospheric pressure, flowing dry inert diluent gas over the substrate, pretreating the film by flowing vapor over the substrate and film flowing an anhydrous reactive gas from a source separate from the source of vapour, over the substrate and film and particularly flowing anhydrous hydrogen halide gas, namely anhydrous hydrogen fluoride gas over the substrate and film to cause the removal of portions of the film, continuing the flow of the reactive gas over the substrate film for typically 5 to 30 seconds, until a controlled amount of film has been removed, terminating the flow of reactive gas and continuing the flow of dry inert diluent gas to stop the removal of film. In the case of non-hydroscopic film on the substrate, the flow of vapor continues during the flow of the reactive gas and is terminated shortly after the termination of the flow of reactive gas.

    Abstract translation: 从硅衬底或其他类似材料的衬底去除至少一部分膜的工艺,衬底上的膜通常是氧化膜,保持包围衬底的气氛在接近室温和接近 正常的大气压力,流过干燥的惰性稀释气体在基板上,通过在基板上流动蒸气来预处理膜,以及将来自与蒸气源分离的源的无水反应气体流过衬底和膜,并且特别是流动的无水卤化氢 气体,即在基材和膜上的无水氟化氢气体,以引起膜的部分去除,将反应性气体在基材膜上继续流动通常为5至30秒,直到已经除去受控量的膜, 终止反应气体的流动并继续干燥惰性稀释气体的流动以停止除去膜。 在衬底上的非吸湿膜的情况下,在反应气体的流动期间蒸汽的流动继续,并且在反应气体流动结束后不久就终止。

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