公开(公告)号：US10720578B2

公开(公告)日：2020-07-21

申请号：US16070485

申请日：2016-04-29

Applicant: THE INSTITUTE OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES

Inventor： Hangbing LV ,  Ming Liu ,  Xiaoxin Xu ,  Qing Luo ,  Qi Liu ,  Shibing Long

IPC: H01L45/00 ,  H01L27/24

Abstract: Provided are a self-gating resistive storage device and a method for fabrication thereof; said self-gating resistive storage device comprises: lower electrodes; insulating dielectric layers arranged perpendicular to, and intersecting with, the lower electrodes to form a stacked structure, said stacked structure being provided with a vertical trench; a gating layer grown on the lower electrodes by means of self-alignment technique, the interlayer leakage channel running through the gating layer being isolated via the insulating dielectric layers; a resistance transition layer arranged in the vertical trench and connected to the insulating dielectric layers and the gating layer; and an upper electrode arranged in the resistance transition layer. In the storage device provided by the described technical solution, the gating layer is grown on the lower electrodes by means of self-alignment technique, such that the interlayer leakage channel running through the gating layer is isolated via the insulating dielectric layers; thus leakage between the upper and lower word lines through the gating layer is prevented, solving the technical problem in the prior art of leakage between the upper and lower word lines in a self-gating resistive storage device, and improving the reliability of the device.