Abstract:
A film formation apparatus and a film formation method that can homogenize the distribution of gas in each zone in a chamber and improve film formation precision is provided. A film formation apparatus according to one embodiment is characterized in that the film formation apparatus includes: a chamber which includes a plurality of zones into which gas is introduced, and a plurality of discharge ports that discharge the gas located in at least any of the zones and that can individually adjust an opening state; and a transportation unit that transports a substrate so as to pass through the plurality of the zones in the chamber.
Abstract:
A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO 2 , TiO 2 , and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.
Abstract:
A method for forming a film on a flexible substrate by vapor deposition is provided, wherein the method is capable of reducing in size of the entire apparatus and improving an efficiency to thereby enhance productivity. A film formation method includes the steps of: transporting the flexible substrate through a first zone in a vacuum chamber, into which a raw material gas containing metal or silicon is introduced, so that components included in the raw material gas are adsorbed onto the flexible substrate, and performing sputter deposition by transporting the flexible substrate through a second zone in the vacuum chamber, the second zone being separated from the first zone and including a target material containing metal or silicon.
Abstract:
A laminate body (1) of the present invention includes a base material (2), a film-like or a membrane-like undercoat layer (3 or 103) that is formed in at least a portion of the outer surface of the base material (2), and an atomic layer deposition film (4) that is formed on a surface opposite to a surface coming into contact with the base material (2) among both surfaces of the undercoat layer (3 or 103) in the thickness direction thereof. At least a portion of precursors of the atomic layer deposition film (4) bind to the undercoat layer (3 or 103), and the atomic layer deposition film (4) is formed into a membrane shape covering the undercoat layer (3 or 103).
Abstract:
PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of depositing a multilayered film, wherein the size of the entire apparatus can be reduced.SOLUTION: The film deposition apparatus is structured to deposit a film onto an inner surface of a substrate to be treated while winding the substrate around a film deposition treatment drum at a prescribed angle and continuously or intermittently transferring the substrate, so that the size of the entire apparatus is reduced. The multilayered film can be readily deposited by rotating a rotary drum equipped with a film deposition source in the deposition treatment drum.
Abstract:
PROBLEM TO BE SOLVED: To provide a deposition method that can efficiently form a multilayer film even in the roll to roll deposition while increasing the number of cycles per unit time in the atomic layer deposition (ALD) deposition, thereby suppressing an increase in size and footprint of a facility that is caused in association with the multilayering and the multi-cycling.SOLUTION: The deposition method forms a thin film on a substrate using a material in a vapor state while continuously or intermittently transporting the substrate. The deposition method includes the steps of: disposing the substrate around a revolving drum; revolving the revolving drum at a first speed; supplying the revolving drum with at least two materials respectively; and transporting the substrate at a second speed, wherein the first and second speeds differ from each other.
Abstract:
PROBLEM TO BE SOLVED: To pattern a comparatively thick ITO thin film, which was formed by room temperature film formation on a flexible board, through etching without causing residue or side etch. SOLUTION: In the patterning method of impurity doped indium oxide thin film, the patterning method includes: a process for etching the impurity doped indium oxide thin film in a dry etching method; and a process for etching the impurity doping indium oxide thin film, which was subjected to the dry etching method, in a wet etching method. More concretely, an upper portion is etched by dry etching so that ITO thin film may leave about 50 nm, and etching is continued by wet etching and patterned in this patterning method. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a structure body that can be aligned easily between a semiconductor circuit and a color filter, a transmissive liquid crystal display, a method for manufacturing semiconductor circuit, and a method for manufacturing transmissive liquid crystal display. SOLUTION: As a substantially transparent base material plate 3; a non-alkali glass (thickness: 0.5 mm) is used, a color filter layer 4 of R (red), G (green), and B (blue) is formed to one surface in the thickness direction thereof, and a protection layer of transparent resin is formed thereon. On the surface where the color filter is facing to the opposite side of the base material 3, a substantially transparent thin film transistor and a semiconductor circuit that is constituted with a substantially transparent conductive material having an electrical contact conductive to the thin film transistor are provided through alignment with a filter arrangement pattern. COPYRIGHT: (C)2008,JPO&INPIT