FILM-FORMATION DEVICE AND FILM-FORMATION METHOD

    公开(公告)号:EP3196337A4

    公开(公告)日:2018-03-28

    申请号:EP15842589

    申请日:2015-09-17

    Inventor: KON MASATO

    Abstract: A film formation apparatus and a film formation method that can homogenize the distribution of gas in each zone in a chamber and improve film formation precision is provided. A film formation apparatus according to one embodiment is characterized in that the film formation apparatus includes: a chamber which includes a plurality of zones into which gas is introduced, and a plurality of discharge ports that discharge the gas located in at least any of the zones and that can individually adjust an opening state; and a transportation unit that transports a substrate so as to pass through the plurality of the zones in the chamber.

    MASK BLANK FOR REFLECTION-TYPE EXPOSURE, AND MASK FOR REFLECTION-TYPE EXPOSURE
    2.
    发明公开
    MASK BLANK FOR REFLECTION-TYPE EXPOSURE, AND MASK FOR REFLECTION-TYPE EXPOSURE 审中-公开
    掩模坯进行反思曝光反射和曝光掩膜

    公开(公告)号:EP2763157A4

    公开(公告)日:2015-11-04

    申请号:EP12835040

    申请日:2012-09-24

    CPC classification number: G03F1/24 G03F1/38 G03F1/40 G03F1/60

    Abstract: A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO 2 , TiO 2 , and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.

    成膜方法及び成膜装置
    6.
    发明专利

    公开(公告)号:JP2017115208A

    公开(公告)日:2017-06-29

    申请号:JP2015252255

    申请日:2015-12-24

    Inventor: KON MASATO

    Abstract: 【課題】成膜方法において、原子層堆積法によって成膜を行う場合に、装置の小型化が可能であり、良好な膜質の成膜を効率的に行えるようにする。【解決手段】ALDによって薄膜を形成する成膜方法であって、成膜室120が第一のゾーン121と、第二のゾーン122と、基板205を第一の進行方向fまたは第二の進行方向bに移動させることによって1サイクルのALDサイクルが複数回行われる成膜搬送路DPと、を備えており、成膜搬送路DPにおいて、ALDサイクルがn回(ただし、nは2以上の整数)行われる長さだけ、基板205を第一の進行方向fに進める第一の成膜動作と、この後、同じくALDサイクルがm回(ただし、mはnより小さい整数)行われる長さだけ、基板205を第二の進行方向bに進める第二の成膜動作と、第一の成膜動作および第二の成膜動作を複数回繰り返すことと、を含む。【選択図】図1

    Film deposition treatment drum in film deposition apparatus for atomic layer deposition
    7.
    发明专利
    Film deposition treatment drum in film deposition apparatus for atomic layer deposition 有权
    电影沉积物膜沉积沉积物中的膜沉积处理液

    公开(公告)号:JP2012201898A

    公开(公告)日:2012-10-22

    申请号:JP2011064920

    申请日:2011-03-23

    Inventor: KON MASATO

    Abstract: PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of depositing a multilayered film, wherein the size of the entire apparatus can be reduced.SOLUTION: The film deposition apparatus is structured to deposit a film onto an inner surface of a substrate to be treated while winding the substrate around a film deposition treatment drum at a prescribed angle and continuously or intermittently transferring the substrate, so that the size of the entire apparatus is reduced. The multilayered film can be readily deposited by rotating a rotary drum equipped with a film deposition source in the deposition treatment drum.

    Abstract translation: 要解决的问题:提供一种能够沉积多层膜的成膜装置,其中可以减少整个装置的尺寸。 解决方案:成膜装置被构造成将薄膜沉积在待处理的基板的内表面上,同时以规定的角度绕成膜沉积处理滚筒,并连续或间歇地转印基板,使得 整个装置的尺寸减小。 通过在沉积处理滚筒中旋转装有成膜源的旋转滚筒,可以容易地沉积多层薄膜。 版权所有(C)2013,JPO&INPIT

    Deposition method
    8.
    发明专利
    Deposition method 有权
    沉积方法

    公开(公告)号:JP2012193438A

    公开(公告)日:2012-10-11

    申请号:JP2011059775

    申请日:2011-03-17

    Inventor: KON MASATO

    Abstract: PROBLEM TO BE SOLVED: To provide a deposition method that can efficiently form a multilayer film even in the roll to roll deposition while increasing the number of cycles per unit time in the atomic layer deposition (ALD) deposition, thereby suppressing an increase in size and footprint of a facility that is caused in association with the multilayering and the multi-cycling.SOLUTION: The deposition method forms a thin film on a substrate using a material in a vapor state while continuously or intermittently transporting the substrate. The deposition method includes the steps of: disposing the substrate around a revolving drum; revolving the revolving drum at a first speed; supplying the revolving drum with at least two materials respectively; and transporting the substrate at a second speed, wherein the first and second speeds differ from each other.

    Abstract translation: 要解决的问题:提供即使在辊轧沉积中也能有效地形成多层膜的沉积方法,同时增加原子层沉积(ALD)沉积中每单位时间的循环次数,从而抑制增加 在与多层和多循环相关联的设施的尺寸和足迹中。 解决方案:沉积方法在连续或间歇地输送基板的同时使用蒸汽状态的材料在基板上形成薄膜。 沉积方法包括以下步骤:将基板设置在旋转滚筒周围; 以第一速度旋转回转鼓; 向旋转滚筒分别供给至少两种材料; 以及以第二速度运送所述基板,其中所述第一和第二速度彼此不同。 版权所有(C)2013,JPO&INPIT

    Patterning method
    9.
    发明专利
    Patterning method 有权
    绘图方法

    公开(公告)号:JP2008078549A

    公开(公告)日:2008-04-03

    申请号:JP2006258708

    申请日:2006-09-25

    Abstract: PROBLEM TO BE SOLVED: To pattern a comparatively thick ITO thin film, which was formed by room temperature film formation on a flexible board, through etching without causing residue or side etch.
    SOLUTION: In the patterning method of impurity doped indium oxide thin film, the patterning method includes: a process for etching the impurity doped indium oxide thin film in a dry etching method; and a process for etching the impurity doping indium oxide thin film, which was subjected to the dry etching method, in a wet etching method. More concretely, an upper portion is etched by dry etching so that ITO thin film may leave about 50 nm, and etching is continued by wet etching and patterned in this patterning method.
    COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:通过蚀刻在不引起残留物或侧蚀刻的情况下,通过在柔性板上的室温成膜形成的比较厚的ITO薄膜图案化。 解决方案:在杂质掺杂的氧化铟薄膜的图案化方法中,图案化方法包括:以干蚀刻方法蚀刻杂质掺杂的氧化铟薄膜的工艺; 以及通过干蚀刻方法蚀刻杂质掺杂的氧化铟薄膜的方法。 更具体地,通过干蚀刻蚀刻上部,使得ITO薄膜可以留下约50nm,并且通过湿蚀刻继续蚀刻并在该图案化方法中图案化。 版权所有(C)2008,JPO&INPIT

    Structure body, transmissive liquid crystal display, method for manufacturing the same and method for manufacturing semiconductor circuit
    10.
    发明专利
    Structure body, transmissive liquid crystal display, method for manufacturing the same and method for manufacturing semiconductor circuit 有权
    结构体,透射液晶显示器,其制造方法和制造半导体电路的方法

    公开(公告)号:JP2007299833A

    公开(公告)日:2007-11-15

    申请号:JP2006124881

    申请日:2006-04-28

    Abstract: PROBLEM TO BE SOLVED: To provide a structure body that can be aligned easily between a semiconductor circuit and a color filter, a transmissive liquid crystal display, a method for manufacturing semiconductor circuit, and a method for manufacturing transmissive liquid crystal display. SOLUTION: As a substantially transparent base material plate 3; a non-alkali glass (thickness: 0.5 mm) is used, a color filter layer 4 of R (red), G (green), and B (blue) is formed to one surface in the thickness direction thereof, and a protection layer of transparent resin is formed thereon. On the surface where the color filter is facing to the opposite side of the base material 3, a substantially transparent thin film transistor and a semiconductor circuit that is constituted with a substantially transparent conductive material having an electrical contact conductive to the thin film transistor are provided through alignment with a filter arrangement pattern. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:提供可以在半导体电路和滤色器之间容易对准的结构体,透射型液晶显示器,半导体电路的制造方法以及透射型液晶显示器的制造方法。

    解决方案:作为基本透明的基材板3; 使用无碱玻璃(厚度:0.5mm),在其厚度方向的一个表面上形成R(红色),G(绿色)和B(蓝色)的滤色器层4,并且保护层 的透明树脂。 在滤色器面向基材3的相对侧的表面上,设置有基本上透明的薄膜晶体管和半导体电路,该薄膜晶体管和半导体电路由具有与薄膜晶体管导电的电接触的基本上透明的导电材料构成 通过与过滤器布置图案对准。 版权所有(C)2008,JPO&INPIT

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