Abstract:
A impurity-diffusing composition comprising (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. (In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 1 0 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.) Provided is a impurity-diffusing composition that is excellent in printability on a semiconductor substrate and impurity diffusibility thereinto, less prone to cracks during the process of firing and diffusion, and becomes, when fired, a fired film having sufficient masking properties for other impurity diffusion agents.
Abstract:
A impurity-diffusing composition comprising (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. (In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 1 to 6 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m = 95:5 to 25:75.) Provided is a impurity-diffusing composition that is excellent in printability on a semiconductor substrate and impurity diffusibility thereinto, less prone to cracks during the process of firing and diffusion, and becomes, when fired, a fired film having sufficient masking properties for other impurity diffusion agents.
Abstract:
A polyester resin composition which exhibits a reduced amount of production of the acid component monomer and/or oligomers of the polyester is provided. In other words, the object of the present invention is achieved by the following means. (1) A polyester resin composition, wherein the surface roughness Ra of a capture plate is less than 0.150 ?m, as measured when a sample of the polyester resin composition is melt at 300?C for 60 minutes under a nitrogen atmosphere, quickly cooled and thermally treated at 220?C for 8 hours to form scattered products which are then attached to the capture plate. (2) A polyester resin composition, wherein the production rate of an acid component monomer and/or the production rate of oligomers is/are less than 0.70, as defined by the following formulas ( I) and (II): Production rate of acid component monomer = (amount of produced acid component monomer)/(acid component monomer content) (I) Production rate of oligomers = (amount of produced oligomers)/(oligomer content) (II). (3) A method for producing a polyester resin composition, wherein an ionic liquid is added. [Selected Drawing] None
Abstract:
Provided is a polyester resin composition in which the amount of acid-component monomer and/or oligomer produced in the polyester is reduced. That is to say, the purpose of the present invention is achieved by the following means: (1) a polyester resin composition characterized in that, after rapidly cooling a sample that has been melted in a nitrogen atmosphere at 300oC for 60 minutes, the surface roughness Ra of a collecting plate to which scattered matter has attached during 8 hours of heat treatment at 220oC is less than 0.150 mm; (2) a polyester resin composition characterized in that the acid-component monomer production rate and/or the oligomer production rate defined by formulas (I) and (II) below is less than 0.70; and (3) a method of producing a polyester resin composition characterized by adding an ionic liquid. Formula (I): acid-component monomer production rate = (amount of acid-component monomer produced)/(acid-component monomer content) Formula (II): oligomer production rate = (amount of oligomer produced)/(oligomer content)
Abstract:
An impurity-diffusing composition comprising (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. (In the formula, R 1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R 1 may be the same or different. R 2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R 2 may be the same or different. R 3 and R 4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R 3 and a plurality of R 4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.) Provided is an impurity-diffusing composition that is excellent in printability on a semiconductor substrate and impurity diffusibility thereinto, less prone to cracks during the process of firing and diffusion, and becomes, when fired, a fired film having sufficient masking properties for other impurity diffusion agents.