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    IMPURITY-DIFFUSING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
    3.
    发明专利
    IMPURITY-DIFFUSING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT 未知

    公开(公告)号：MY177765A

    公开(公告)日：2020-09-23

    申请号：MYPI2015704259

    申请日：2014-06-30

    Applicant: TORAY INDUSTRIES

    Inventor： INABA SACHIO ,  MURASE SEIICHIRO ,  SHIMIZU HIROJI ,  DAN KOUICHI ,  SUWA MITSUHITO

    Abstract: A impurity-diffusing composition comprising (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. (In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 1 0 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.) Provided is a impurity-diffusing composition that is excellent in printability on a semiconductor substrate and impurity diffusibility thereinto, less prone to cracks during the process of firing and diffusion, and becomes, when fired, a fired film having sufficient masking properties for other impurity diffusion agents.

    IMPURITY-DIFFUSING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
    5.
    发明专利
    IMPURITY-DIFFUSING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT 未知

    公开(公告)号：PH12015502750B1

    公开(公告)日：2016-03-21

    申请号：PH12015502750

    申请日：2015-12-09

    Applicant: TORAY INDUSTRIES

    Inventor： INABA SACHIO ,  MURASE SEIICHIRO ,  SHIMIZU HIROJI ,  DAN KOUICHI ,  SUWA MITSUHITO

    IPC: H01L21/225 ,  H01L31/068

    Abstract: A impurity-diffusing composition comprising (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. (In the formula, R1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R1 may be the same or different. R2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R2 may be the same or different. R3 and R4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 1 to 6 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R3 and a plurality of R4 each may be the same or different. The ratio of n:m = 95:5 to 25:75.) Provided is a impurity-diffusing composition that is excellent in printability on a semiconductor substrate and impurity diffusibility thereinto, less prone to cracks during the process of firing and diffusion, and becomes, when fired, a fired film having sufficient masking properties for other impurity diffusion agents.

    IMPURITY-DIFFUSING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
    6.
    发明公开
    IMPURITY-DIFFUSING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT 有权
    成分中的杂质分辨率和一种用于生产半导体元件

    公开(公告)号：EP3018699A4

    公开(公告)日：2017-02-22

    申请号：EP14819841

    申请日：2014-06-30

    Applicant: TORAY INDUSTRIES

    Inventor： INABA SACHIO ,  MURASE SEIICHIRO ,  SHIMIZU HIROJI ,  DAN KOUICHI ,  SUWA MITSUHITO

    IPC: H01L21/225 ,  C09D183/04 ,  H01L31/068

    CPC classification number: H01L31/1876 ,  C08G77/08 ,  C08G77/80 ,  C08K3/32 ,  C08K3/36 ,  C08K2003/329 ,  C09D11/03 ,  C09D11/102 ,  C09D11/52 ,  C09D183/04 ,  H01L21/2225 ,  H01L21/2254 ,  H01L31/0682 ,  H01L31/103 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521 ,  C08K3/38

    Abstract: An impurity-diffusing composition comprising (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. (In the formula, R 1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R 1 may be the same or different. R 2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R 2 may be the same or different. R 3 and R 4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R 3 and a plurality of R 4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.) Provided is an impurity-diffusing composition that is excellent in printability on a semiconductor substrate and impurity diffusibility thereinto, less prone to cracks during the process of firing and diffusion, and becomes, when fired, a fired film having sufficient masking properties for other impurity diffusion agents.

    Abstract translation: 杂质扩散组合物，包括（A）由式（1）和杂质扩散成分的（B）表示的聚硅氧烷。 （式中，R 1 darstellt具有6至15个碳原子的芳基，并且R 1的一个多元化可以是相同的或不同的。R 2 darstellt任何羟基的烷基具有1至6个碳原子基团， 在具有1至6个碳原子具有2至10个碳原子的烯基，具有2至6个碳原子，和具有6至15个碳原子的芳基，和R 2的一个多元化可以是酰基的烷氧基 相同或不同。R 3和R 4各自表示任何的羟基的，在具有1至6个碳原子的具有1至6个碳原子具有2至10个碳原子的链烯基烷氧基烷基基团，并且在酰基 具有2至6个碳原子，和R 3中的一个多元化和R 4各自的多元基团可以是相同或不同的n个:.米的比例为95：5至25:75）本发明提供一种杂质扩散。 组合物确实具有优异的适印性的半导体基片和扩散杂质烧制到其中和diffusio的过程中，不易发生裂纹 n和变为发射时，对其他杂质扩散剂的烧成具有膜充足的掩蔽特性。

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