MASK PASTE COMPOSITION, SEMICONDUCTOR ELEMENT OBTAINED USING SAME, AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT

    公开(公告)号:MY180132A

    公开(公告)日:2020-11-23

    申请号:MYPI2016700310

    申请日:2013-08-02

    Abstract: There is provided a mask paste composition having superior cracking resistance and masking properties in a post-application impurity diffusion step, superior patterning properties during application, and superior storage stability of its pre-cured solution by means of a mask paste composition characterized by including (a) a specific polysiloxane, (b) silica particles having an average particle diameter of not greater than 150 nm, and (c) a solvent having a boiling point of not lower than 130? C, wherein the weight average molecular weight of (a) the polysiloxane is not less than 1000, the content of the silica particles in the solid fraction of the composition is 20% by weight to 70% by weight, and the concentrations of P, B and Al in the entire composition are each not more than 20 ppm.

    ADHESIVE FOR TEMPORARY BONDING, ADHESIVE LAYER, METHOD FOR MANUFACTURING WAFER WORK PIECE AND SEMICONDUCTOR DEVICE USING SAME, REWORK SOLVENT, POLYIMIDE COPOLYMER, POLYIMIDE MIXED RESIN, AND RESIN COMPOSITION

    公开(公告)号:SG10202000399YA

    公开(公告)日:2020-03-30

    申请号:SG10202000399Y

    申请日:2015-08-05

    Abstract: The present invention provides: a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention is a temporary-bonding adhesive characterized by being a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.99 mol% of the (A1) residue and 0.01-60 mol% of the (B1) residue.

    PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

    公开(公告)号:MY171248A

    公开(公告)日:2019-10-04

    申请号:MYPI2014701731

    申请日:2012-12-21

    Abstract: Disclosed is a photosensitive resin composition which exhibits positive or negative photosensitivity and is used as a mask in an ion implantation step, the photosensitive resin composition including, as a resin, (A) a polysiloxane. The photosensitive resin composition of the present invention has high heat resistance and is capable of controlling a pattern shape, and also has excellent ion implantation mask performance, thus enabling application to a low-cost high-temperature ion implantation process.

    PHOTOSENSITIVE COMPOSITION, CURED FILM FORMED FROM SAME, AND ELEMENT HAVING CURED FILM

    公开(公告)号:SG188386A1

    公开(公告)日:2013-04-30

    申请号:SG2013015979

    申请日:2011-08-30

    Abstract: The present invention provides a positive photosensitive composition comprising (A) an alkali-soluble resin, (B) a naphthoquinone diazide compound, (C) a solvent and (D) a metal chelate compound, which is characterized in that the (D) 5 metal chetate compound has a structure represented by the following Fomiula (1)and the content of the (D) metal chelate compound is 0.1 to 5 pans by weight compared to 110 parts by weight of the (A) alkali-soluble resin.The positive photosensitive composition of the present invention has characteristic features such as high heat resistance and high transparency as well as 10 excellent adhesion in development and wet-heat resistance.

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