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公开(公告)号：KR20200138280A
公开(公告)日：2020-12-09
申请号：KR20207029894
申请日：2019-02-22
Applicant: TORAY INDUSTRIES
Inventor： CHIEDA SHIGEKI , NISHIKAWA TORU , NOMURA FUMIYASU
Abstract: 기체취출면으로부터취출되는기체의유속이노즐길이방향을따라균일한기체취출노즐을얻는다. 본발명의기체취출노즐은수지필름과대향하는측면을기체취출면으로하는하우징과, 노즐길이방향을따라기체를공급하는기체공급구와, 기체공급구로부터기체취출면까지연통하는 1개이상의균압실을갖고, 적어도 1개의균압실은그 기체취출면측의면이칸막이판에의해구성되고, 칸막이판상면에는, 양단에개구를갖는복수의통형상체가각 통형상체의축방향이노즐길이방향에직교하도록노즐길이방향을따라서배치되고, 통형상체는칸막이판으로부터기립하는기체공급구에가까운측의벽면과칸막이판이이루는각 θ가소정범위내이고, 통형상체의칸막이판에접하는면에는칸막이판을포함해서관통하는구멍으로서기체유통구멍이형성되어있다
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2.发明申请ELECTRON BEAM DEPOSITION DEVICE AND METHOD OF MANUFACTURING THIN FILM BY USING THE DEPOSITION DEVICE 审中-公开电子束沉积装置及使用沉积装置制造薄膜的方法
公开(公告)号：WO9927149A8
公开(公告)日：1999-07-29
申请号：PCT/JP9805234
申请日：1998-11-20
Applicant: TORAY INDUSTRIES , FUKUSHIMA KAZUHIRO , NOMURA FUMIYASU , TANOUE TETSURO
Inventor： FUKUSHIMA KAZUHIRO , NOMURA FUMIYASU , TANOUE TETSURO
IPC: C23C14/24 , C23C14/30 , C23C14/54 , H01L21/3205
CPC classification number: C23C14/30 , C23C14/243 , C23C14/246 , C23C14/54
Abstract: An electron beam deposition device capable of manufacturing a high-quality deposited film, the method of manufacturing a deposited thin film by using the electron beam deposition device and a high quality compound thin film. The electron beam deposition device provided with at least one evaporation furnace, one electron gun and one arbitrary waveform signal generator, characterized in that the electron gun has a means of scanning with an electron beam two-dimensionally and, further, is so connected to receive signals outputted from the arbitrary waveform signal generator as electron beam scanning signal and/or electron beam intensity signals.
Abstract translation: 一种能够制造高质量沉积膜的电子束沉积装置，通过使用电子束沉积装置制造沉积薄膜的方法和高质量复合薄膜。 电子束沉积装置具有至少一个蒸发炉，一个电子枪和一个任意波形信号发生器，其特征在于，该电子枪具有用电子束二维扫描的装置，并且进一步被连接以接收 从任意波形信号发生器输出的信号作为电子束扫描信号和/或电子束强度信号。
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公开(公告)号：AT273403T
公开(公告)日：2004-08-15
申请号：AT97908528
申请日：1997-03-27
Applicant: TORAY INDUSTRIES
Inventor： NOMURA FUMIYASU
Abstract: The object of the present invention is to provide a method and apparatus for efficiently and continuously manufacturing large-sized substrate with a thin film such as antireflection filters by using relatively small manufaturing apparatus. To achieve the above object, the present invention provides: A method for manufacturing substrate with a thin film, in which a film forming chamber with ,upstream and downstream of a film forming areafirst and second stockers capable of storing in multi-stages substrate on which a film to be formed is provided, and a loading chamber and an unloading chamber are provided upstream and downstream of the film forming chamber, respectively with a stocker capable of storing in multi-stages the substrate on which a film to be formed, wherein while a group of substrates on which a film to be formed are being subjected to film forming in the film forming chamber, the loading chamber is loaded with the next group of substrates on which a film to be formed and evacuated, and the substrates on each of them a film formed previously are unloaded from the unloading chamber, characterized in that the substrates are being subjected to film forming while passing through the film forming area. And also as an apparatus for executing the method for manufacturing substrate with a thin film, the present invention provides: An apparatus, comprising a film forming chamber with first and second stockers capable of storing in multi-stages substrate on which a film to be formed upstream and downstream of a film forming area, and a loading chamber and an unloading chamber provided upstream and downstream of said film forming chamber, respectively with a stocker capable of storing in multi-stages substrate on which a film to be formed, wherein said film forming chamber, said loading chamber and said unloading chamber have respectively an independent evacuation means to allow evacuation; and said film forming chamber has a film forming particle generation source, a means for passing the substrate on which a film to be formed through the film forming area, and means for taking out the substrate on which a film to be formed one after another from the first stocker into the passing means and further putting it from the passing means into the second stocker. The method for manufacturing substrate with a thin film of the present invention can continuously and efficiently produce large-sized substrate with a thin film, and is wasteless in the film forming area, having features that the productivity is several times higher compared to the conventional methods and that the production cost is very low.
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公开(公告)号：MY183557A
公开(公告)日：2021-02-26
申请号：MYPI2015703116
申请日：2014-03-07
Applicant: TORAY INDUSTRIES
Inventor： SAKAMOTO KEITARO , TONAI SHUNPEI , EJIRI HIROE , NOMURA FUMIYASU
Abstract: The present invention is a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that Faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to Pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply Direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that Makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided.
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公开(公告)号：AT204616T
公开(公告)日：2001-09-15
申请号：AT95920217
申请日：1995-05-31
Applicant: TORAY INDUSTRIES
Inventor： NOMURA FUMIYASU , SAITO TAKESHI
Abstract: An object of the present invention is to provide a method and an apparatus for producing a large sized filmed substrate such as a reflection preventive filter using a relatively small production facility. In a method for producing a filmed substrate according to the present invention, the thickness of a monitor film formed on a film forming monitor is measured by using the film forming monitor disposed outside of a film forming area or a movable film forming monitor and a film forming process is controlled based on a film thickness so measured to thereby form a film even on a film forming objective substrate having a size equal to the entirety of the film forming area. In addition, the method of the present invention can improve the degree of freedom in which the film forming objective substrate is disposed within the film forming area, whereby the productivity during the production process can also be improved.
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Patent Agency Ranking
公开(公告)号：HUE042687T2
公开(公告)日：2019-07-29
申请号：HUE16746357
申请日：2016-01-07
Applicant: TORAY INDUSTRIES
Inventor： KITAMURA OSAMU , MAKI AKIHISA , NOMURA FUMIYASU , KIMISHIMA KOTARO
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公开(公告)号：DE60328985D1
公开(公告)日：2009-10-08
申请号：DE60328985
申请日：2003-06-13
Applicant: TORAY ADVANCED FILM CO LTD , TORAY INDUSTRIES
Inventor： NOMURA FUMIYASU , HARADA HIROSHI
Abstract: A method for manufacturing a plated film by bringing a film having a conductive surface into electrical contact with a cathode roll with a liquid film interposed between the film and the cathode and forming a metal plating on the conductive surface of the film, characterized in that the relation E0>Ä(I/Cs)xdÜ/ sigma where E0 is the reduction potential of the metal forming the plating, I is the value of the current flowing through the cathode roll for plating, Cs is the area of the conductive surface of the film in electrical contact with the cathode roll with a liquid film interposed therebetween, d is the thickness of the gap between the cathode roll and the conductive film, and sigma is the conductivity of the liquid forming the liquid film present in the gap. A cathode roll having a surface roughness Rmax of 1 mu m or less is also disclosed. Further a cathode roll having a Vickers hardness of the surface of 200 or more is disclosed.
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公开(公告)号：DE69730185D1
公开(公告)日：2004-09-16
申请号：DE69730185
申请日：1997-03-27
Applicant: TORAY INDUSTRIES
Inventor： NOMURA FUMIYASU
Abstract: The object of the present invention is to provide a method and apparatus for efficiently and continuously manufacturing large-sized substrate with a thin film such as antireflection filters by using relatively small manufaturing apparatus. To achieve the above object, the present invention provides: A method for manufacturing substrate with a thin film, in which a film forming chamber with ,upstream and downstream of a film forming areafirst and second stockers capable of storing in multi-stages substrate on which a film to be formed is provided, and a loading chamber and an unloading chamber are provided upstream and downstream of the film forming chamber, respectively with a stocker capable of storing in multi-stages the substrate on which a film to be formed, wherein while a group of substrates on which a film to be formed are being subjected to film forming in the film forming chamber, the loading chamber is loaded with the next group of substrates on which a film to be formed and evacuated, and the substrates on each of them a film formed previously are unloaded from the unloading chamber, characterized in that the substrates are being subjected to film forming while passing through the film forming area. And also as an apparatus for executing the method for manufacturing substrate with a thin film, the present invention provides: An apparatus, comprising a film forming chamber with first and second stockers capable of storing in multi-stages substrate on which a film to be formed upstream and downstream of a film forming area, and a loading chamber and an unloading chamber provided upstream and downstream of said film forming chamber, respectively with a stocker capable of storing in multi-stages substrate on which a film to be formed, wherein said film forming chamber, said loading chamber and said unloading chamber have respectively an independent evacuation means to allow evacuation; and said film forming chamber has a film forming particle generation source, a means for passing the substrate on which a film to be formed through the film forming area, and means for taking out the substrate on which a film to be formed one after another from the first stocker into the passing means and further putting it from the passing means into the second stocker. The method for manufacturing substrate with a thin film of the present invention can continuously and efficiently produce large-sized substrate with a thin film, and is wasteless in the film forming area, having features that the productivity is several times higher compared to the conventional methods and that the production cost is very low.
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公开(公告)号：DE69522295T2
公开(公告)日：2002-04-18
申请号：DE69522295
申请日：1995-05-31
Applicant: TORAY INDUSTRIES
Inventor： NOMURA FUMIYASU , SAITO TAKESHI
Abstract: An object of the present invention is to provide a method and an apparatus for producing a large sized filmed substrate such as a reflection preventive filter using a relatively small production facility. In a method for producing a filmed substrate according to the present invention, the thickness of a monitor film formed on a film forming monitor is measured by using the film forming monitor disposed outside of a film forming area or a movable film forming monitor and a film forming process is controlled based on a film thickness so measured to thereby form a film even on a film forming objective substrate having a size equal to the entirety of the film forming area. In addition, the method of the present invention can improve the degree of freedom in which the film forming objective substrate is disposed within the film forming area, whereby the productivity during the production process can also be improved.
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公开(公告)号：DE69522295D1
公开(公告)日：2001-09-27
申请号：DE69522295
申请日：1995-05-31
Applicant: TORAY INDUSTRIES
Inventor： NOMURA FUMIYASU , SAITO TAKESHI
Abstract: An object of the present invention is to provide a method and an apparatus for producing a large sized filmed substrate such as a reflection preventive filter using a relatively small production facility. In a method for producing a filmed substrate according to the present invention, the thickness of a monitor film formed on a film forming monitor is measured by using the film forming monitor disposed outside of a film forming area or a movable film forming monitor and a film forming process is controlled based on a film thickness so measured to thereby form a film even on a film forming objective substrate having a size equal to the entirety of the film forming area. In addition, the method of the present invention can improve the degree of freedom in which the film forming objective substrate is disposed within the film forming area, whereby the productivity during the production process can also be improved.
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