公开(公告)号：MY183557A

公开(公告)日：2021-02-26

申请号：MYPI2015703116

申请日：2014-03-07

Applicant: TORAY INDUSTRIES

Inventor： SAKAMOTO KEITARO ,  TONAI SHUNPEI ,  EJIRI HIROE ,  NOMURA FUMIYASU

Abstract: The present invention is a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that Faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to Pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply Direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that Makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided.

公开(公告)号：EP2975158A4

公开(公告)日：2016-11-23

申请号：EP14763228

申请日：2014-03-07

Applicant: TORAY INDUSTRIES

Inventor： SAKAMOTO KEITARO ,  TONAI SHUNPEI ,  EJIRI HIROE ,  NOMURA FUMIYASU

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/509 ,  C23C16/54 ,  H01J37/34 ,  H01L21/31 ,  H05H1/46

CPC classification number: C23C16/509 ,  B05D1/62 ,  C23C16/45574 ,  C23C16/50 ,  C23C16/54 ,  C23C16/545 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32568 ,  H01J37/32669 ,  H01J37/32825 ,  H01J37/34 ,  H01J2237/3321

Abstract: The present invention is a plasma CVD device provided with a vacuum chamber, and a plasma CVD electrode unit and a substrate-holding mechanism inside the vacuum chamber. The plasma CVD electrode unit is provided with an anode, a cathode that faces the anode at a distance, and a first gas supply nozzle for supplying gas so as to pass through the plasma-generation space between the anode and cathode. The substrate-holding mechanism is disposed at a position where the gas passing through the plasma-generation space impinges. The length of the anode in the gas-supply direction and the length of the cathode in the gas-supply direction are both longer than the distance between the anode and the cathode. Thus, a plasma CVD device that makes it possible to increase gas decomposition efficiency and achieve high film deposition rate is provided.